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-SiC interface proved by a slow positron beamMaekawa, Masaki; Kawasuso, Atsuo; Yoshikawa, Masahito; Miyashita, Atsumi; Suzuki, Ryoichi*; Odaira, Toshiyuki*
Physica B; Condensed Matter, 376-377, p.354 - 357, 2006/04
Times Cited Count：2 Percentile：12.53(Physics, Condensed Matter)no abstracts in English
Pensl, G.*; Ciobanu, F.*; Frank, T.*; Kirmse, D.*; Krieger, M.*; Reshanov, S.*; Schmid, F.*; Weidner, M.*; Oshima, Takeshi; Ito, Hisayoshi; et al.
Microelectronic Engineering, 83(1), p.146 - 149, 2006/01
Times Cited Count：15 Percentile：59.20(Engineering, Electrical & Electronic)no abstracts in English
/4H-SiC interface probed by positron annihilation spectroscopyMaekawa, Masaki; Kawasuso, Atsuo; Yoshikawa, Masahito; Miyashita, Atsumi; Suzuki, Ryoichi*; Odaira, Toshiyuki*
Physical Review B, 73(1), p.014111_1 - 014111_9, 2006/01
Times Cited Count：20 Percentile：64.35(Materials Science, Multidisciplinary)no abstracts in English
-ray irradiationOshima, Takeshi; Ito, Hisayoshi
Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.191 - 194, 2004/10
no abstracts in English
/SiC interface using positron annihilation techniqueMaekawa, Masaki; Kawasuso, Atsuo; Yoshikawa, Masahito; Ichimiya, Ayahiko
Materials Science Forum, 457-460(Part2), p.1301 - 1304, 2004/06
no abstracts in English
Maekawa, Masaki; Kawasuso, Atsuo; Yoshikawa, Masahito; Ichimiya, Ayahiko
Materials Science Forum, 445-446, p.144 - 146, 2004/05
no abstracts in English
C in dry oxygen ambient on silicon carbide and their thermal annealing effectsYoshikawa, Masahito; Ishida, Yuki*; Jikimoto, Tamotsu*; Hijikata, Yasuto*; Ito, Hisayoshi; Okumura, Hajime*; Takahashi, Tetsuo*; Tsuchida, Hidekazu*; Yoshida, Sadafumi*
Denshi Joho Tsushin Gakkai Rombunshi, C, 86(4), p.426 - 433, 2003/04
no abstracts in English
Yoshikawa, Masahito; Sato, Mirei; Oshima, Takeshi; Ito, Hisayoshi
Materials Science Forum, 389-393, p.1009 - 1012, 2002/05
no abstracts in English
-ray irradiation on the characteristics of 6H silicon carbide metal-oxide-seminocductor field effect transistor with hydrogen-annealed gate oxideOshima, Takeshi; Ito, Hisayoshi; Yoshikawa, Masahito
Journal of Applied Physics, 90(6), p.3038 - 3041, 2001/09
Times Cited Count：43 Percentile：81.52(Physics, Applied)The effect of gamma-ray irradiation on the electrical characteristics of 6H-SiC MOSFETs with hydrogen-annealed gate oxide was studied.The concentration of radiation induced interface traps increases with increasing gamma-ray dose, however, the number of interface traps is 1/100 smaller than it in Si MOSFET. The channel mobility for 6H-SiC MOSFET does not change at 30 kGy, and it becomes the half of the initial value (52 cm2/Vs) at 500 kGy.Since the channel mobility for Si MOSFET shows 50 % of the initial value at 10 kGy, this indicates that tha radiation resistance of SiC MOSFET is stronger than that of Si MOSFET. As for the cahnnel mobility vs. the concentration of radiation induced interface traps, the same behavior shows for Si and SiC MOSFETs. This suggest the channel mobility in SiC as well as Si decreases by the generation of interface traps which act as scattring centers.
Yoshikawa, Masahito; Kojima, Kazutoshi; Oshima, Takeshi; Ito, Hisayoshi; Okada, Sohei; Ishida, Yuki*
Materials Science Forum, 338-342, p.1129 - 1132, 2000/00
no abstracts in English
Yoshikawa, Masahito; Takahashi, Kunimasa*; Oshima, Takeshi; Kitabatake, Makoto*; Ito, Hisayoshi
Proceedings of 1st International Workshop on Ultra-Low-Loss Power Device Technology (UPD2000), p.199 - 200, 2000/00
no abstracts in English
-ray irradiation effects on 6H-SiC MOSFETOshima, Takeshi; Yoshikawa, Masahito; Ito, Hisayoshi; Aoki, Yasushi; Nashiyama, Isamu
Mater. Sci. Eng. B, 61-62, p.480 - 484, 1999/00
Times Cited Count：23 Percentile：73.95(Materials Science, Multidisciplinary)no abstracts in English
-ray irradiationOshima, Takeshi; Yoshikawa, Masahito; Ito, Hisayoshi; Aoki, Yasushi; Nashiyama, Isamu
Japanese Journal of Applied Physics, Part 2, 37(8B), p.L1002 - L1004, 1998/08
Times Cited Count：15 Percentile：57.69(Physics, Applied)no abstracts in English
Yoshikawa, Masahito; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; ; Onishi, K.*; Okumura, Hajime*; Yoshida, Sadafumi*
Denshi Joho Tsushin Gakkai Rombunshi, C-II, 81(1), p.140 - 150, 1998/01
no abstracts in English
-ray irradiation on the electrical characteristics of SiC metal-oxide-semiconductor structuresYoshikawa, Masahito; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; Takahashi, Yoshihiro*; Onishi, K.*; Okumura, Hajime*; Yoshida, Sadafumi*
Electronics and Communication in Japan., Part2, 81(10), p.37 - 47, 1998/00
no abstracts in English
-ray irradiation on 6H-SiC MOSFETsOshima, Takeshi; Yoshikawa, Masahito; Ito, Hisayoshi; Nashiyama, Isamu; Okada, Sohei
Proceedings of 3rd International Workshop on Radiation Effects on Semiconductor Devices for Space Application, p.22 - 27, 1998/00
no abstracts in English
Yoshikawa, Masahito; ; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; Yoshida, Sadafumi*; Okumura, Hajime*; Takahashi, Yoshihiro*; Onishi, Kazunori*
Journal of Applied Physics, 80(1), p.282 - 287, 1996/07
Times Cited Count：22 Percentile：70.64(Physics, Applied)no abstracts in English
Yoshikawa, Masahito; ; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; Okumura, Hajime*; Yoshida, Sadafumi*
14th Symp. on Materials Science and Engineering, Research Center of Ion Beam Technology, Hosei Univ., 0, p.159 - 165, 1996/00
no abstracts in English
Oshima, Takeshi; Yoshikawa, Masahito; Ito, Hisayoshi; Takahashi, Tetsuo*; Okumura, Hajime*; Yoshida, Sadafumi*; Nashiyama, Isamu
Silicon Carbide and Related Materials 1995 (Institute of Physics Conf. Series,No. 142), 0, p.801 - 804, 1996/00
no abstracts in English
Imaki, Shunsaku*; ; Takahashi, Yoshihiro*; Yoshikawa, Masahito; Onishi, Kazunori*
Heisei-5-Nendo (Dai-37-Kai) Nihon Daigaku Riko Gakubu Gakujutsu Koenkai Koen Rombunshu; Zairyo, Bussei, p.135 - 136, 1993/00
no abstracts in English
