Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Narumi, Kazumasa; Naramoto, Hiroshi
Proceedings of 3rd International Symposium on Atomic Level Characterizations for New Materials and Devices '01 (ALC '01), p.322 - 325, 2001/11
Transformation of C thin films on Si(111) substrates by irradiation with 360 keV
Ar
and
Ar
ions at fluences of 1.0
10
/cm
to 1.1
10
/cm
was investigated by atomic force microscopy. As-prepared insulating films become conductive after the irradiation up to the fluence of 1.1
10
/cm
, where the film is found to be almost transformed into a form of amorphous carbon by Raman-spectroscopy analysis. This results from conductive carbon species due to decomposition of the C
molecule. Considerable topographic change is observed up to the fluence of 1.1
10
/cm
where the lines characteristic of the C
film fade out of the Raman spectra, which is due to sputtering and to densification of the C
molecule.