Effect of Mn substitution on the electronic structure for Mn-doped indium-tin oxide films studied by soft and hard X-ray photoemission spectroscopy

大槻 太毅*; Ishida, Tatsuhiro*; Tsutsumi, Naoya*; 小林 正起*; Inagaki, Kodai*; 吉田 鉄平*; 竹田 幸治; 藤森 伸一; 保井 晃*; 北川 彩貴*; et al.

Physical Review Materials (Internet), 7(12), p.124601_1 - 124601_6, 2023/12

https://doi.org/10.1103/PhysRevMaterials.7.124601

InMnSnO is a diluted magnetic semiconductor combining transparent, ferromagnetism, and semiconducting properties. We report the electronic structure of InMnSnO (x = 0.0, 0.2, and 0.3) by means of hard X-ray photoemission spectroscopy (HAXPES), soft X-ray resonant photoemission spectroscopy (RPES), and X-ray absorption spectroscopy (XAS). The spectral shape of the Mn - XAS spectra indicates that the valence of the substitutional Mn ions is divalent. The In 3 and O core-level shifts with Mn substitution suggest the hole doping due to the Mn ions. The valence-band spectra exhibit the well-defined features associated with the donor states across the Fermi level (EF) and the valence-band edge. The valence-band maximum (VBM) shifts to higher binding energy and the spectral weight near EF decreases with increasing Mn concentration, which is consistent with the hole doping nature observed in the core-level shift. The Mn -3 RPES reveals that the hump structure around 1.9 eV above the VBM is originating from the Mn 3 impurity band and the valence-band state consists of the O 2 band strongly hybridized with the Mn 3 orbital. Furthermore, there is no contribution of the Mn 3 orbital to the spectral weight close to . Based on our results, we argue the possible mechanism of the ferromagnetism for InMnSnO.