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論文

High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate

岩本 直也*; Azarov, A.*; 大島 武; Moe, A. M. M.*; Svensson, B. G.*

Journal of Applied Physics, 118(4), p.045705_1 - 045705_8, 2015/07

 被引用回数:4 パーセンタイル:22.79(Physics, Applied)

Influence of high-temperature annealing on deep-level defects in a high-purity semi-insulating hexagonal (4H) silicon carbide (SiC) substrates was studied. From secondary ion mass spectrometry, it was found that the substrates contained boron (B) with concentration in the mid 10$$^{15}$$ /cm$$^{3}$$ range while other impurities including nitrogen, aluminum, titanium, vanadium and chromium were below their detection limits. Schottky barrier diodes (SBDs) were fabricated on substrates annealed at 1400$$sim$$1700 $$^{circ}$$C. The series resistance of the SBDs decreased with increasing annealing temperature. Admittance spectroscopy results showed the presence of shallow B acceptors and deep-level defects. By 1400 $$^{circ}$$C annealing, the B acceptors were still compensated by deep-level defects. However, the concentration of deep-level defects decreased with increasing annealing temperature above 1400 $$^{circ}$$C. Therefore, the decreases in series resistance due to high temperature annealing can be interpreted in terms of annealing of deep-level defects which act as compensation centers for B acceptors.

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