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論文

Thermal stability of deep-level defects in high-purity semi-insulating 4H-SiC substrate studied by admittance spectroscopy

岩本 直也*; Azarov, A.*; 大島 武; Moe, A. M. M.*; Svensson, B. G.*

Materials Science Forum, 858, p.357 - 360, 2016/05

Thermal stability of deep level defects in high purity semi-insulating (HPSI) 4H-Silicon Carbide (SiC) substrates was studied. The samples were annealed from 700 to 1700 $$^{circ}$$C, and Schottky barrier diodes (SBDs) were fabricated on the samples. The SBDs were characterized by current-voltage, capacitance-voltage and admittance spectroscopy measurements. The forward current of SBDs increased substantially with the increase of annealing temperature, while the reverse leakage current remained below 10$$^{-12}$$ A. The capacitance of the samples annealed at 1400 and 1500 $$^{circ}$$C was essentially zero at bias voltages between 0 and 10 V, but after 1600 and 1700 $$^{circ}$$C annealing, the capacitance increased and started to respond to the bias voltage. The net hole concentrations in the 1600 and 1700 $$^{circ}$$C annealed substrates were estimated to be 0.5$$sim$$1$$times$$10$$^{14}$$ and 1$$sim$$4$$times$$10$$^{15}$$ /cm$$^{3}$$, respectively. From admittance spectroscopy, five defect levels were detected. Defect peaks relating to boron acceptors increased although defect peaks with deep levels decreased with increasing annealing temperature. Therefore, it can be concluded that deep levels which act as compensation centers for boron acceptors dissociate by high temperature annealing, and as a results, hole concentration increases.

論文

High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate

岩本 直也*; Azarov, A.*; 大島 武; Moe, A. M. M.*; Svensson, B. G.*

Journal of Applied Physics, 118(4), p.045705_1 - 045705_8, 2015/07

 被引用回数:6 パーセンタイル:27.18(Physics, Applied)

Influence of high-temperature annealing on deep-level defects in a high-purity semi-insulating hexagonal (4H) silicon carbide (SiC) substrates was studied. From secondary ion mass spectrometry, it was found that the substrates contained boron (B) with concentration in the mid 10$$^{15}$$ /cm$$^{3}$$ range while other impurities including nitrogen, aluminum, titanium, vanadium and chromium were below their detection limits. Schottky barrier diodes (SBDs) were fabricated on substrates annealed at 1400$$sim$$1700 $$^{circ}$$C. The series resistance of the SBDs decreased with increasing annealing temperature. Admittance spectroscopy results showed the presence of shallow B acceptors and deep-level defects. By 1400 $$^{circ}$$C annealing, the B acceptors were still compensated by deep-level defects. However, the concentration of deep-level defects decreased with increasing annealing temperature above 1400 $$^{circ}$$C. Therefore, the decreases in series resistance due to high temperature annealing can be interpreted in terms of annealing of deep-level defects which act as compensation centers for B acceptors.

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