Composition analysis of high-stable transparent conductive zinc oxide by X-ray photoelectron spectroscopy and secondary ion mass spectroscopy

口山 崇*; 長谷川 繁彦*; 山本 憲治*; 寺岡 有殿; 朝日 一*

Japanese Journal of Applied Physics, 50(12), p.121101_1 - 121101_4, 2011/12

https://doi.org/10.1143/JJAP.50.121101

The physical properties of high-stable transparent Si-doped zinc oxide (ZnO) films were determined by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). From XPS, the peak corresponding to the energy of ionized silicon (Si 2p) was observed for all samples after damp heat exposure, even in the aluminum (Al)-doped Si-undoped zinc oxide (ZnO:Al) thin film. SIMS profiles showed an increase in silicon concentration at the surface of ZnO thin films after damp heat exposure. The Ar concentration determined from SIMS measurement showed a clear relationship between the stability and Ar concentration. This can be explained by the packing density of ZnO and a barrier model. Additionally, comparing ZnO:Si with ZnO:Al prepared under the same deposition conditions, we found that silicon can make ZnO thin films more stable.