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論文

Three-dimensional bulk Fermi surfaces and Weyl crossings of Co$$_2$$MnGa thin films underneath a protection layer

河野 嵩*; 鹿子木 将明*; 吉川 智己*; Wang, X.*; 角田 一樹; 室 隆桂之*; 後藤 一希*; 桜庭 裕弥*; 梅津 理恵*; 木村 昭夫*

Physical Review B, 104(19), p.195112_1 - 195112_8, 2021/11

https://doi.org/10.1103/PhysRevB.104.195112
 被引用回数：4 パーセンタイル：36.85(Materials Science, Multidisciplinary)

軟X線放射光を用いた角度分解光電子分光法を、1nmのAlキャッピング層を有するホイスラー型Co$$_2$$MnGa薄膜に適用した。バルクのフェルミ面とバンド構造は、表面処理を行っていないにもかかわらず、3次元の結晶構造に由来する面外方向の運動量に沿って変化していた。さらに、フェルミ準位付近に交点を持つ特徴的な交差バンド(ワイルコーン)が存在し、計算結果と一致していた。ワイルコーンはバルク由来のもので、高い異常ネルンスト係数と異常ホール係数の原因となっている。Co$$_2$$MnGeとCo$$_2$$MnGaのバンド構造を詳細に比較した結果、両合金とも剛体バンド描像が有効であり、異常伝導性を改善するためにGaをGeに置き換えることでキャリアの微調整が可能であることが示された。

論文

Microstructures and interface magnetic moments in Mn$$_{2}$$VAl/Fe layered films showing exchange bias

窪田 崇秀*; 嶋田 雄介*; 土屋 朋生*; 吉川 智己*; 伊藤 啓太*; 竹田 幸治; 斎藤 祐児; 今野 豊彦*; 木村 昭夫*; 高梨 弘毅*

Nanomaterials (Internet), 11(7), p.1723_1 - 1723_11, 2021/07

https://doi.org/10.3390/nano11071723
 被引用回数：2 パーセンタイル：17.84(Chemistry, Multidisciplinary)

Heusler alloys exhibit various magnetic properties. In this study, a layered sample consisting of a Heusler alloy, Mn$$_{2}$$VAl and a ferromagnet, Fe, is selected as a material system exhibiting exchange bias. Although the fully ordered Mn$$_{2}$$VAl is known as a ferrimagnet, the Mn$$_{2}$$VAl/Fe layered structure exhibits exchange bias. The high-angle annular dark field STEM images demonstrated the formation of Mn$$_{2}$$VAl clusters with the L2$$_{1}$$ phase distributed only around the interface to the Fe layer in the sample. Furthermore, the antiferromagnetic coupling between the Mn- and Fe-moments were observed in element specific hysteresis loops measured using XMCD. The locally ordered L2$$_{1}$$ phase and antiferromagnetic Mn-moments in the Mn$$_{2}$$VAl layer are important for the exchange bias.

論文

Unveiling spin-dependent unoccupied electronic states of Co$$_{2}$$MnGe (Ga) film via Ge (Ga) $$L_{2,3}$$ absorption spectroscopy

吉川 智己*; Antonov, V. N.*; 河野 嵩*; 鹿子木 将明*; 角田 一樹; 宮本 幸治*; 竹田 幸治; 斎藤 祐児; 後藤 一希*; 桜庭 裕弥*; et al.

Physical Review B, 102(6), p.064428_1 - 064428_7, 2020/08

https://doi.org/10.1103/PhysRevB.102.064428
 被引用回数：2 パーセンタイル：12.9(Materials Science, Multidisciplinary)

X-ray absorption spectroscopy (XAS) and X-ray magnetic circular dichroism (XMCD) spectroscopy were applied at the Ge (Ga) $$L_{2,3}$$ edge to unravel the spin-resolved unoccupied electronic states of Co$$_{2}$$MnGe (Ga). Complicated spectral features were observed in both XAS and XMCD spectra. For their interpretation, we compared the experimental XAS and XMCD spectra with the calculated Ge (Ga) 4$$s$$ and 4$$d$$ orbital partial density of states. The comparison enabled a qualitative explanation of the XMCD spectra as the difference between the majority and minority-spin unoccupied density of states summed over the 4$$s$$ and 4$$d$$ orbitals. Our finding provides a new approach to uncover the spin-split partial density of states above the Fermi level.

論文

Element-specific density of states of Co$$_{2}$$MnGe revealed by resonant photoelectron spectroscopy

河野 嵩*; 鹿子木 将明*; 吉川 智己*; Wang, X.*; 角田 一樹*; 宮本 幸治*; 室 隆桂之*; 竹田 幸治; 斎藤 祐児; 後藤 一希*; et al.

Physical Review B, 100(16), p.165120_1 - 165120_6, 2019/10

https://doi.org/10.1103/PhysRevB.100.165120
 被引用回数：5 パーセンタイル：27.67(Materials Science, Multidisciplinary)

Resonant photoelectron spectroscopy at the Co and Mn 2${it p}$ core absorption edges of half-metallic Co$$_{2}$$MnGe has been performed to determine the element-specific density of states (DOS). A significant contribution of the Mn 3${it d}$ partial DOS near the Fermi level ($$E_{F}$$) was clarified by measurement at the Mn 2${it p}$ absorption edge. Further analysis by first-principles calculation revealed that it has $$t_{2g}$$ symmetry, which must be responsible for the electrical conductivity along the line perpendicular to the film plane. The dominant normal Auger contribution observed at the Co 2${it p}$ absorption edge indicates delocalization of photoexcited Co 3${it d}$ electrons. The difference in the degrees of localization of the Mn 3${it d}$ and Co 3${it d}$ electrons in Co$$_{2}$$MnGe is explained by the first-principles calculation.

論文

Dirac gap opening and Dirac-fermion-mediated magnetic coupling in antiferromagnetic Gd-doped topological insulators and their manipulation by synchrotron radiation

Shikin, A. M.*; Estyunin, D. A.*; Surnin, Yu. I.*; Koroleva, A. V.*; Shevchenko, E. V.*; Kokh, K. A.*; Tereshchenko, O. E.*; Kumar, S.*; Schwier, E. F.*; 島田 賢也*; et al.

Scientific Reports (Internet), 9(1), p.4813_1 - 4813_17, 2019/03

https://doi.org/10.1038/s41598-019-41137-w
 被引用回数：19 パーセンタイル：71.48(Multidisciplinary Sciences)

A new kind of magnetically-doped antiferromagnetic (AFM) topological insulators (TIs), Bi$$_{1.09}$$Gd$$_{0.06}$$Sb$$_{0.85}$$Te$$_{3}$$, has been studied by angle-resolved photoemission, superconducting magnetometry (SQUID) and X-ray magnetic circular dichroism (XMCD). It has been shown that this TI is characterized by the Dirac gap at the Fermi level. In the paramagnetic phase, a surface magnetic layer is supposed to develop, where the coupling between the Gd magnetic moments is mediated by the topological surface states (TSSs). This assumption can be confirmed by opening a gap at the Dirac point indicated by the surface-sensitive ARPES, a weak hysteresis loop measured by SQUID, the XMCD showing a surface magnetic moment and the temperature dependence of electrical resistance demonstrating a mid-gap semiconducting behavior, which correlates with the temperature dependence of the surface magnetization and confirms the conclusion that only TSSs are located at the Fermi level.

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