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川久保 雄基*; 野口 雄也*; 平田 智昭*; 鳴海 一雅; 境 誠司; 山田 晋也*; 浜屋 宏平*; 宮尾 正信*; 前田 佳均
Physica Status Solidi (C), 10(12), p.1828 - 1831, 2013/12
被引用回数:0 パーセンタイル:0.01(Nanoscience & Nanotechnology)We have investigated crystal quality of Co(MnFe)Si (CMFS) epitaxially grown on Ge(111) by using Rutherford-backscattering spectrometry and an axial-ion-channeling technique. It was found that the CMFS/Ge and CoFeSi (CMFS with x = 1)/Ge have larger static atomic displacement than Fe-based ternary Heusler alloy FeMnSi and FeCoSi/Ge(111). Quaternary alloys may be affected by increase of mixing entropy. Significant disordering at the interface of CMFS with x = 0.75 was found, and discussed on the basis of thermodynamics.