Conduction band caused by oxygen vacancies in aluminum oxide for resistance random access memory

児子 精祐*; 久保田 正人; 原田 善之*; 平山 泰生*; 加藤 誠一*; 北澤 英明*; 木戸 義勇*

Journal of Applied Physics, 112(3), p.033711_1 - 033711_6, 2012/08

https://doi.org/10.1063/1.4745048

As a next-generation memory, we have developed a rare-metal-free memory using Al oxide with a high-density of oxygen vacancies (V). We showed a resistive switching mechanism of an AlOx-ReRAM based on the electronic states revealed by TSC. This system is expected to have high endurance, equivalent to that of dynamic random access memory (DRAM), because it is driven by increasing/decreasing numbers of electrons, similar to DRAM. The electronic structure has been simulated using first-principles calculations. We report the electronic structure of the band gap, analyzed using thermally stimulated current measurements, to evaluate the simulated results. We observed electronic states corresponding to resistance changes for the first time.