検索対象:     
報告書番号:
※ 半角英数字
 年 ~ 
 年
検索結果: 1 件中 1件目~1件目を表示
  • 1

発表形式

Initialising ...

選択項目を絞り込む

掲載資料名

Initialising ...

発表会議名

Initialising ...

筆頭著者名

Initialising ...

キーワード

Initialising ...

使用言語

Initialising ...

発行年

Initialising ...

開催年

Initialising ...

選択した検索結果をダウンロード

論文

Electronic structure of Ga$$_{1-x}$$Cr$$_{x}$$N and Si-doping effects studied by photoemission and X-ray absorption spectroscopy

Song, G.*; 小林 正起*; Hwang, J. I.*; 片岡 隆*; 滝沢 優*; 藤森 淳; 大河内 拓雄; 竹田 幸治; 岡根 哲夫; 斎藤 祐児; et al.

Physical Review B, 78(3), p.033304_1 - 033304_4, 2008/07

 被引用回数:8 パーセンタイル:37.4(Materials Science, Multidisciplinary)

The electronic structure of the magnetic semiconductor Ga$$_{1-x}$$Cr$$_{x}$$N, and the effect of Si doping on it have been investigated by photoemission and soft X-ray absorption spectroscopy. We have confirmed that Cr in GaN is predominantly trivalent when substituting for Ga and that Cr 3$$d$$ states appear within the band gap of GaN just above the N 2$$p$$-derived valence-band maximum. As a result of Si doping, downward shifts of the core levels (except for Cr 2$$p$$) and the formation of new states near the Fermi level were observed, which we attribute to the upward chemical-potential shift and the formation of a small amount of Cr$$^{2+}$$ species caused by electron doping. Possibility of Cr-rich cluster growth by Si doping are discussed based on the spectroscopic and magnetization data.

1 件中 1件目~1件目を表示
  • 1