JAEA
  • help
  • PC | SP
  • JP | EN
          
検索対象：     
報告書番号：
※ 半角英数字
 年 ～ 
 年
全てクリア
検索結果：　2 件中 1件目～2件目を表示
  • 1

発表形式

Initialising ...

選択項目を絞り込む

掲載資料名

Initialising ...

発表会議名

Initialising ...

筆頭著者名

Initialising ...

キーワード

Initialising ...

使用言語

Initialising ...

発行年

Initialising ...

開催年

Initialising ...

選択した検索結果をダウンロード

論文

Chemical-pressure-induced point defects enable low thermal conductivity for Mg$$_{2}$$Sn and Mg$$_{2}$$Si single crystals

齋藤 亘*; 林 慶*; Huang, Z.*; 杉本 和哉*; 大山 研司*; 八方 直久*; 原田 正英; 及川 健一; 稲村 泰弘; 林 好一*; et al.

ACS Applied Energy Materials (Internet), 4(5), p.5123 - 5131, 2021/05

https://doi.org/10.1021/acsaem.1c00670
 被引用回数：12 パーセンタイル：64.95(Chemistry, Physical)

The development of thermoelectric (TE) materials, which can directly convert waste heat into electricity, is vital to reduce the use of fossil fuels. Mg$$_{2}$$Sn and Mg$$_{2}$$Si are promising TE materials because of their superior TE performance. In this study, for future improvement of the TE performance, point defect engineering was applied to the Mg$$_{2}$$Sn and Mg$$_{2}$$Si single crystals (SCs) via boron (B) doping. Their crystal structures were analyzed via white neutron holography and SC X-ray diffraction. Moreover, nanostructures and TE properties of the B-doped Mg$$_{2}$$Sn and Mg$$_{2}$$Si SCs were investigated. The B-doping increased the chemical pressure on the Mg$$_{2}$$Sn and Mg$$_{2}$$Si SCs, leading to induce vacancy defects as a point defect. No apparent change was observed in electronic transport, but thermal transport was significantly prevented. This study demonstrates that the vacancy defects can be controlled by the chemical pressure, and can aid in achieving a high TE performance for the Mg$$_{2}$$Sn and Mg$$_{2}$$Si SCs.

論文

Preparation, thermoelectric properties, and crystal structure of boron-doped Mg$$_{2}$$Si single crystals

林 慶*; 齋藤 亘*; 杉本 和哉*; 大山 研司*; 林 好一*; 八方 直久*; 原田 正英; 及川 健一; 稲村 泰弘; 宮崎 譲*

AIP Advances (Internet), 10(3), p.035115_1 - 035115_7, 2020/03

https://doi.org/10.1063/1.5143839
 被引用回数：16 パーセンタイル：73.04(Nanoscience & Nanotechnology)

Mg$$_{2}$$Si is a potential thermoelectric (TE) material that can directly convert waste energy into electricity. In expectation of improving its TE performance by increasing electron carrier concentration, the element boron (B) is doped in Mg$$_{2}$$Si single crystals (SCs). Their detailed crystal structures are definitely determined by using white neutron holography and single-crystal X-ray diffraction (SC-XRD) measurements. The white neutron holography measurement proves that the doped B atom successfully substitutes for the Mg site. The SC-XRD measurement confirms the B-doping site and also reveals the presence of the defect of Si vacancy (VSi) in the B-doped Mg$$_{2}$$Si SCs. Regarding TE properties, the electrical conductivity, $$sigma$$, and the Seebeck coefficient, S, decreases and increases, respectively, due to the decrease in the electron carrier concentration, contrary to the expectation. The power factor of the B-doped Mg$$_{2}$$Si SCs evaluated from $$sigma$$ and S does not increase but rather decreases by the B-doping.

2 件中 1件目～2件目を表示
  • 1