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岡田 篤*; He, S.*; Gu, B.; 金井 駿*; Soumyanarayanan, A.*; Lim, S. T.*; Tran, M.*; 森 道康; 前川 禎通; 松倉 文礼*; et al.
Proceedings of the National Academy of Sciences of the United States of America, 144(15), p.3815 - 3820, 2017/04
Studies of magnetization dynamics have incessantly facilitated the discovery of fundamentally novel physical phenomena, making steady headway in the development of magnetic and spintronics devices. The dynamics can be induced and detected electrically, offering new functionalities in advanced electronics at the nanoscale. However, its scattering mechanism is still disputed. Understanding the mechanism in thin films is especially important, because most spintronics devices are made from stacks of multilayers with nanometer thickness. The stacks are known to possess interfacial magnetic anisotropy, a central property for applications, whose influence on the dynamics remains unknown. Here, we investigate the impact of interfacial anisotropy by adopting CoFeB/MgO as a model system. Through systematic and complementary measurements of ferromagnetic resonance (FMR) on a series of thin films, we identify narrower FMR linewidths at higher temperatures. We explicitly rule out the temperature dependence of intrinsic damping as a possible cause, and it is also not expected from existing extrinsic scattering mechanisms for ferromagnets. We ascribe this observation to motional narrowing, an old concept so far neglected in the analyses of FMR spectra. The effect is confirmed to originate from interfacial anisotropy, impacting the practical technology of spin-based nanodevices up to room temperature.
上田 茂典*; 今田 真*; 室 隆桂之*; 斎藤 祐児; 菅 滋正*; 松倉 文礼*; 大野 英男*
Physica E, 10(1-3), p.210 - 214, 2001/05
被引用回数:24 パーセンタイル:73.94(Nanoscience & Nanotechnology)希薄磁性半導体GaMnAs(x=0.025)のMn 2p内殻光吸収における磁気円2色性の測定をファラデー配置にて行った。得られたスペクトルを配置間相互作用を考慮したクラスターモデルを用いて解析し、3d電子間のクーロン相互作用,電荷移動エネルギー,Mn 3dとAs 4p間の移動積分,結晶場の大きさといったMn電子状態に関するパラメータの値を得た。また、得られたパラメータ値を用いp-d交換定数を評価した。