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Qiu, Z.*; 賣市 幹大*; Hou, D.*; 内田 健一*; 山本 浩史*; 齊藤 英治
AIP Advances (Internet), 5(5), p.057167_1 - 057167_7, 2015/05
被引用回数:15 パーセンタイル:54.54(Nanoscience & Nanotechnology)Spin-current injection into an organic semiconductor -(BEDT-TTF)Cu[N(CN)]Br film induced by the spin pumping from an yttrium iron garnet (YIG) film. When magnetization dynamics in the YIG film is excited by ferromagnetic or spin-wave resonance, a voltage signal was found to appear in the -(BEDT-TTF)Cu[N(CN)]Br film. Magnetic-field-angle dependence measurements indicate that the voltage signal is governed by the inverse spin Hall effect in -(BEDT-TTF)Cu[N(CN)]Br. We found that the voltage signal in the -(BEDT-TTF)Cu[N(CN)]Br/YIG system is critically suppressed around 80 K, around which magnetic and/or glass transitions occur, implying that the efficiency of the spin-current injection is suppressed by fluctuations which critically enhanced near the transitions.