Relationship between soft error rate in SOI-SRAM and amount of generated charge by high energy ion probes

迫間 昌俊*; 阿保 智*; 増田 直之*; 若家 富士男*; 小野田 忍; 牧野 高紘; 平尾 敏雄*; 大島 武; 岩松 俊明*; 尾田 秀一*; et al.

Proceedings of 10th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-10) (Internet), p.115 - 118, 2012/12

Soft Error Rates (SERs) in Partially Depleted (PD) Silicon-On-Insulator (SOI) Static Random Access Memories (SRAMs) with a technology node of 90 nm have been investigated by hydrogen (H), helium (He), lithium (Li), beryllium (Be), carbon (C) and oxygen (O) ions, accelerated up to a few tens of MeV using a tandem accelerator. The SERs increased with increasing the amount of the generated charge in the SOI body by a floating body effect, even if the amount of the generated charge was less than the critical charge. The SERs with the generated charge in the SOI body more than the critical charge were almost constant. These results suggest that the floating body effect induces soft errors by enhancing the source-drain current and increasing the body potential.