Abderrahmane, A.*; Ko, P. J.*; Okada, Hiroshi*; Sato, Shinichiro; Oshima, Takeshi; Shibasaki, Ichiro*; Sandhu, A.*
IEEE Electron Device Letters, 35(12), p.1305 - 1307, 2014/12
Tolerance of AlInSb/InAsSb/AlInSb heterostructures quantum-well-based micro-Hall sensors against proton irradiation of 380 keV and proton fluence in the range 10 and 10 (proton/cm) is reported. Defects and deep levels induced by proton irradiation into the heterostructures caused decreases in the mobility of the micro-Hall sensors. Degradation of the magnetic sensitivity started at a proton fluence of 10 (proton/cm) and continued with increasing proton fluence. The variation of the micro-Hall sensors sensitivity was minimal in low doped AlInSb/InAsSb/AlInSb heterostructure quantum wells. These micro-Hall sensors were operable even at proton fluence of 10 (proton/cm), which makes these devices suitable for space applications with lifetime of thousands of years in the outer space.
Abderrahmane, A.*; Ko, P. J.*; Okada, Hiroshi*; Sato, Shinichiro; Oshima, Takeshi; Sandhu, A.*
IEEE Electron Device Letters, 35(11), p.1130 - 1132, 2014/11
The longitudinal and transverse magnetoresistances of AlGaN/GaN heterostructure-based micro-Hall sensors were compared with samples irradiated with protons with an energy of 380 keV and fluence of 10 (protons/cm). Increases in the elastic and inelastic scattering were deduced from weak localization behavior in both samples. The AlGaN/GaN micro-Hall sensors showed stable magnetic sensitivity in non and irradiated samples and increased resistivity after proton irradiation yielded an enhanced magnetoresistance sensitivity in nonirradiated sensors from 160 to 417 V/(A T). The minimum detectable magnetic field of irradiated micro-Hall sensors determined from magneto-voltage measurements at 4 K was similar to the minimum detectable magnetic field in the nonirradiated sensors.
Abderrahmane, A.*; Takahashi, Hiroki*; Tashiro, Tatsuya*; Ko, P. J.*; Okada, Hiroshi*; Sato, Shinichiro; Oshima, Takeshi; Sandhu, A.*
AIP Conference Proceedings 1585, p.123 - 127, 2014/02
The effect of annealing at 673 K on irradiated micro-Hall sensors irradiated with protons at 380 keV and fluences of 1 cm, 1 cm, 1 cm is reported. Cathodoluminescence measurements were carried out at room temperature before and after annealing and showed improvement in the band edge band emission of the GaN layer. After annealing a sensor irradiated by 1 cm the device became operational with improvements in its magnetic sensitivity. All irradiated sensors showed improvement in their electrical characteristics after annealing.
Abderrahmane, A.*; Tashiro, Tatsuya*; Takahashi, Hiroki*; Ko, P. J.*; Okada, Hiroshi*; Sato, Shinichiro; Oshima, Takeshi; Sandhu, A.*
Applied Physics Letters, 104(2), p.023508_1 - 023508_4, 2014/01
The effect of annealing on the magnetoelectrical properties of proton-irradiated micro-Hall sensors at an energy of 380 keV and very high proton fluences was studied. Recovery of the electron mobility and a decrease in the sheet resistance of the annealed micro-Hall sensors, as well as an enhancement in their magnetic sensitivity were reported. Trap removal and an improvement in the crystal quality by removing defects were confirmed through current-voltage measurements and Raman spectroscopy, respectively.
Abderrahmane, A.*; Koide, Shota*; Okada, Hiroshi*; Takahashi, Hiroki*; Sato, Shinichiro; Oshima, Takeshi; Sandhu, A.*
Applied Physics Letters, 102(19), p.193510_1 - 193510_4, 2013/05
The magnetoelectric properties of AlGaN/GaN micro-Hall effect sensors were studied after 380 keV proton irradiation. After irradiation the current-voltage measurements, stability of the magnetic sensitivity of the sensors, and the sheet electron density were degraded with a dramatic decrease of the electron mobility at high temperatures. Raman spectroscopy showed a degradation in the crystalline quality of GaN crystal, but there was no change in the strain.
Abderrahmane, A.*; Koide, Shota*; Tahara, Tomoyuki*; Sato, Shinichiro; Oshima, Takeshi; Okada, Hiroshi*; Sandhu, A.*
Journal of Physics; Conference Series, 433, p.012011_1 - 012011_8, 2013/04
We investigated the effect of high energy and high fluence proton irradiation on magnetoelectric properties of AlGaN/GaN micro-Hall sensors from 5.4 K to room temperature. The sensors show good resistance versus the irradiation translated by the stability of the sheet density therefore the stability of the absolute sensitivity of the sensor. However, the proton irradiation damaged the electrical properties of the sensor indicated by the dramatically decrease of the mobility at low temperature by rate of about 81% at 5.4 K. The existing of the 2DEG system either after irradiation with high energy was confirmed by investigation the magnetotransport measurements at low temperature and which show Shubnikov de Haas oscillations at high magnetic field. Damping of the Shubnikov de Haas oscillations and disappearance of Landau plateaus after irradiation were related to the degradation in the mobility causing by increasing the scattering at the interface.
Abderrahmane, A.*; Koide, Shota*; Sato, Shinichiro; Oshima, Takeshi; Sandhu, A.*; Okada, Hiroshi*
IEEE Transactions on Magnetics, 48(11), p.4421 - 4423, 2012/11
Recent industrial trends indicate increasing demand for Hall effect sensors for monitoring magnetic fields under extreme conditions such as high temperatures and under harmful radiation conditions. In this study, robust and high sensitivity Hall effect sensors using AlGaN/GaN heterostructures with a two-dimensional electron gas at the heterointerface were fabricated, and their magnetic properties were investigated. The AlGaN/GaN 2DEG Hall sensors were stable to at least 400 C and even after irradiation of 380 keV protons at the fluence of 1 10 /cm. The results showed that the AlGaN/GaN 2DEG Hall sensors had superior radiation tolerance to AlGaAs/GaAs and AlInSb/InAsSb/AlInSb magnetic sensors.
Okada, Hiroshi*; Abderrahmane, A.*; Koide, Shota*; Takahashi, Hiroki*; Sato, Shinichiro; Oshima, Takeshi; Sandhu, A.*
Journal of Physics; Conference Series, 352, p.012010_1 - 012010_5, 2012/03
Okada, Hiroshi*; Abderrahmane, A.*; Adarsh, S.*; Wakahara, Akihiro*; Sato, Shinichiro; Oshima, Takeshi
no journal, ,
no abstracts in English