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Journal Articles

Size and dopant-concentration dependence of photoluminescence properties of ion-implanted phosphorus- and boron-codoped Si nanocrystals

Nakamura, Toshihiro*; Adachi, Sadao*; Fujii, Minoru*; Sugimoto, Hiroshi*; Miura, Kenta*; Yamamoto, Shunya

Physical Review B, 91(16), p.165424_1 - 165424_8, 2015/04

 Times Cited Count:13 Percentile:57.42(Materials Science, Multidisciplinary)

Semiconductor nanocrystals have unique electrical and optical properties, because of the quantum confinement effect, and the doping of impurities into nanocrystals. In this study, we investigated the photoluminescence (PL) properties of phosphorus- (P) and boron- (B) co-doped Si nanocrystals (Si NCs), which was synthesized using an ion implantation technique. The Si-NC size (average diameter: 3.5, 4.4, 5.2 nm) and the P and B ion doses (0.1-4.5$$times$$10$$^{16}$$ cm$$^{-2}$$)values were systematically varied. We find that the PL peak energy shifts to lower values with increasing the average diameters of Si NCs and PB ion dose. The results of PL measurements indicate that the PL spectra are due to the band-to-band transition at the reduced Si-NC band gap caused by the formation of impurity and the radiative transitions between defect- and/or impurity-related localized states. It was found that the PL properties can be controlled by varying the Si-NC size as well as the dopant concentration.

Journal Articles

Phosphorus and boron codoping of silicon nanocrystals by ion implantation; Photoluminescence properties

Nakamura, Toshihiro*; Adachi, Sadao*; Fujii, Minoru*; Miura, Kenta*; Yamamoto, Shunya

Physical Review B, 85(4), p.045441_1 - 045441_7, 2012/01

 Times Cited Count:24 Percentile:72.65(Materials Science, Multidisciplinary)

Silicon nanocrystals (Si-nc's) such as nanometer-sized Si dots embedded in a SiO$$_{2}$$ matrix and porous Si have been intensively investigated because of their interesting photoluminescence (PL) properties. Si-nc's exhibit strong and visible emission at room temperature. Because of their compatibility with Si-based technology, light-emitting Si-nc's are an attractive candidate for materials used in various optoelectronic device applications. In this study, the PL properties of n- and p-type dopants phosphorus (P) and boron (B) co-doped Si-nc's prepared by the ion implantation were studied. For (P, B) co-doped Si-nc's, the donor-acceptor (D-A)-pair recombination emission was clearly observed on the long-wavelength side of the intrinsic Si-nc emission. The D-A-pair recombination energy is found to be smaller than the band-gap energy of bulk Si and is strongly dependent on the number of P and B impurities doped in a Si-nc's.

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