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Journal Articles

Analysis of bystander effect induced by cell membrane response in glioma cells

Wada, Seiichi*; Ando, Tatsuhiko*; Watanabe, Aya*; Kakizaki, Takehiko*; Natsuhori, Masahiro*; Funayama, Tomoo; Sakashita, Tetsuya; Yokota, Yuichiro; Kobayashi, Yasuhiko

JAEA-Review 2014-050, JAEA Takasaki Annual Report 2013, P. 79, 2015/03

So far, we clarified that X-ray irradiation induced cell killing by bystander effect mediated-secreted factor. This phenomenon was related with sphingomyelinase (SMase). In this study we analyzed mechanism of secreted SMase from irradiated cells after irradiation. SMase was detected in the culture medium after irradiation by SDS-PAGE. Then, SMase was detected in the exosome of culture medium, but not out of exosome after irradiation. This result indicates that SMase was secreted as exosome from the irradiated cells.

Journal Articles

Analytical surveillance on production methods of homogeneous and uniform solid materials from spent ion exchange residuum after ion coupled plasma volume-reduction process

Otani, Hiroshi; Mizui, Hiroyuki; Higashiura, Norikazu; Bando, Fumio*; Endo, Nobuyuki*; Yamagishi, Ryuichiro*; Kume, Kyo*

Heisei-25-Nendo Koeki Zaidan Hojin Wakasawan Enerugi Kenkyu Senta kenkyu Nempo, 16, P. 66, 2014/10

no abstracts in English

Journal Articles

Axial orientation of molecular-beam-epitaxy-grown Fe$$_{3}$$Si/Ge hybrid structures and its degradation

Maeda, Yoshihito; Jonishi, Takafumi*; Narumi, Kazumasa; Ando, Yuichiro*; Ueda, Koji*; Kumano, Mamoru*; Sado, Taizo*; Miyao, Masanobu*

Applied Physics Letters, 91(17), p.171910_1 - 171910_3, 2007/10

 Times Cited Count:31 Percentile:74.06(Physics, Applied)

The axial orientation of molecular-beam-epitaxy (MBE)-grown Fe$$_{3}$$Si(111)/Ge(111) hybrid structures was investigated by Rutherford backscattering spectroscopy. We confirmed that during MBE above 300$$^{circ}$$C, the interdiffusion of Fe and Ge atoms results in a composition change and the epitaxial growth of FeGe in Fe$$_{3}$$Si. Low-temperature ($$<$$200 $$^{circ}$$C) MBE can realize fully ordered DO$$_{3}$$-Fe$$_{3}$$Si with highly axial orientation [minimum yield ($$chi$$$$_{min}$$)=2.2%]. Postannealing above 400 $$^{circ}$$C results in a composition change and the degradation of axial orientation in the off-stoichiometric Fe$$_{3}$$Si. The significance of stoichiometry with regard to thermal stability and the interfacial quality of Fe$$_{3}$$Si(111)/Ge(111) hybrid structures was also discussed.

Journal Articles

Low temperature hetero-epitaxy of ferromagnetic silicide on Ge substrates for spin-transistor application

Ando, Yuichiro*; Ueda, Koji*; Kumano, Mamoru*; Sado, Taizo*; Narumi, Kazumasa; Maeda, Yoshihito; Miyao, Masanobu*

Shingaku Giho, 107(111), p.221 - 224, 2007/06

Ferromagnetic silicide Fe$$_{3}$$Si (Currie temperature: 840 K) has three phases (A2, B2, and DO3), where the DO3-type is an ordered phase and calculated to be spin-polarized at the Fermi level. In addition, the lattice constant (0.565 nm) of Fe$$_{3}$$Si is almost completely equal to that (0.565 nm) of Ge. Therefore, atomically controlled epitaxial growth of Fe$$_{3}$$Si is expected on Ge. This will be a powerful tool to realize Ge channel spin transistors with ultrahigh speed operation and ultralow power consumption. This paper reviews our recent progress in novel epitaxial growth of Fe$$_{3}$$Si on Ge for spintronics application.

Journal Articles

Low-temperature epitaxial growth of [Fe$$_{3}$$Si/SiGe]$$_{n}$$ (n = 1-2) multi-layered structures for spintronics application

Sado, Taizo*; Ueda, Koji*; Ando, Yuichiro*; Kumano, Mamoru*; Narumi, Kazumasa; Maeda, Yoshihito; Miyao, Masanobu*

ECS Transactions, 11(6), p.473 - 479, 2007/00

Our recent progresses in epitaxial growth of Fe$$_{3}$$Si on Ge substrates are reviewed. Single crystalline Fe$$_{3}$$Si layers with atomically flat interfaces were achieved on Ge(111) substrates by optimizing growth conditions at low temperatures (60$$sim$$200 $$^{circ}$$C). Thermal stability of it was guaranteed up to 400 $$^{circ}$$C. In addition, epitaxial growth of mixed layers composed of Fe$$_{3}$$Si, FeGe, and FeSi on Ge substrates at 400 $$^{circ}$$C is reported. Finally, epitaxial growth of Fe$$_{3}$$Si/Ge/Fe$$_{3}$$Si/Ge structures is discussed. These results will be a powerful tool to open up SiGe related spintronics.

Journal Articles

Effect of Fe/Si ratio on epitaxial growth of Fe$$_{3}$$Si on Ge substrate

Kumano, Mamoru*; Ando, Yuichiro*; Ueda, Koji*; Sado, Taizo*; Narumi, Kazumasa; Maeda, Yoshihito; Miyao, Masanobu*

ECS Transactions, 11(6), p.481 - 485, 2007/00

The effects of the Fe/Si ratios on molecular beam epitaxy (MBE) of Fe$$_{3}$$Si on Ge substrate have been investigated in a wide range of growth temperatures (60$$sim$$300 $$^{circ}$$C). From XRD measurements, it was found that Fe$$_{3}$$Si layers were epitaxially grown on Ge(111) substrates at 60$$sim$$200 $$^{circ}$$C under the stoichiometric (Fe:Si = 3:1) and non-stoichiometric (Fe:Si = 4:1) conditions. From RBS measurement, it was found that atomic mixing of Fe and Ge at Fe$$_{3}$$Si/Ge interfaces began at a growth temperature of 300 $$^{circ}$$C. In the case of MBE under the stoichiometric condition, the crystallinity of Fe$$_{3}$$Si is significantly improved compared to the non-stoichiometric condition. As a result, very low $$chi$$$$_{min}$$ was obtained in a wide temperature (60$$sim$$200 $$^{circ}$$C) under the stoichiometric condition. From the transmission electron microscopy measurements, it was shown that high-quality DO3-type Fe$$_{3}$$Si/Ge structures with atomically flat interfaces were realized at a low temperature ($$sim$$200 $$^{circ}$$C) under the stoichiometric condition.

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