Wada, Seiichi*; Ando, Tatsuhiko*; Watanabe, Aya*; Kakizaki, Takehiko*; Natsuhori, Masahiro*; Funayama, Tomoo; Sakashita, Tetsuya; Yokota, Yuichiro; Kobayashi, Yasuhiko
JAEA-Review 2014-050, JAEA Takasaki Annual Report 2013, P. 79, 2015/03
So far, we clarified that X-ray irradiation induced cell killing by bystander effect mediated-secreted factor. This phenomenon was related with sphingomyelinase (SMase). In this study we analyzed mechanism of secreted SMase from irradiated cells after irradiation. SMase was detected in the culture medium after irradiation by SDS-PAGE. Then, SMase was detected in the exosome of culture medium, but not out of exosome after irradiation. This result indicates that SMase was secreted as exosome from the irradiated cells.
Otani, Hiroshi; Mizui, Hiroyuki; Higashiura, Norikazu; Bando, Fumio*; Endo, Nobuyuki*; Yamagishi, Ryuichiro*; Kume, Kyo*
Heisei-25-Nendo Koeki Zaidan Hojin Wakasawan Enerugi Kenkyu Senta kenkyu Nempo, 16, P. 66, 2014/10
no abstracts in English
Maeda, Yoshihito; Jonishi, Takafumi*; Narumi, Kazumasa; Ando, Yuichiro*; Ueda, Koji*; Kumano, Mamoru*; Sado, Taizo*; Miyao, Masanobu*
Applied Physics Letters, 91(17), p.171910_1 - 171910_3, 2007/10
The axial orientation of molecular-beam-epitaxy (MBE)-grown FeSi(111)/Ge(111) hybrid structures was investigated by Rutherford backscattering spectroscopy. We confirmed that during MBE above 300C, the interdiffusion of Fe and Ge atoms results in a composition change and the epitaxial growth of FeGe in FeSi. Low-temperature (200 C) MBE can realize fully ordered DO-FeSi with highly axial orientation [minimum yield ()=2.2%]. Postannealing above 400 C results in a composition change and the degradation of axial orientation in the off-stoichiometric FeSi. The significance of stoichiometry with regard to thermal stability and the interfacial quality of FeSi(111)/Ge(111) hybrid structures was also discussed.
Ando, Yuichiro*; Ueda, Koji*; Kumano, Mamoru*; Sado, Taizo*; Narumi, Kazumasa; Maeda, Yoshihito; Miyao, Masanobu*
Shingaku Giho, 107(111), p.221 - 224, 2007/06
Ferromagnetic silicide FeSi (Currie temperature: 840 K) has three phases (A2, B2, and DO3), where the DO3-type is an ordered phase and calculated to be spin-polarized at the Fermi level. In addition, the lattice constant (0.565 nm) of FeSi is almost completely equal to that (0.565 nm) of Ge. Therefore, atomically controlled epitaxial growth of FeSi is expected on Ge. This will be a powerful tool to realize Ge channel spin transistors with ultrahigh speed operation and ultralow power consumption. This paper reviews our recent progress in novel epitaxial growth of FeSi on Ge for spintronics application.
Sado, Taizo*; Ueda, Koji*; Ando, Yuichiro*; Kumano, Mamoru*; Narumi, Kazumasa; Maeda, Yoshihito; Miyao, Masanobu*
ECS Transactions, 11(6), p.473 - 479, 2007/00
Our recent progresses in epitaxial growth of FeSi on Ge substrates are reviewed. Single crystalline FeSi layers with atomically flat interfaces were achieved on Ge(111) substrates by optimizing growth conditions at low temperatures (60200 C). Thermal stability of it was guaranteed up to 400 C. In addition, epitaxial growth of mixed layers composed of FeSi, FeGe, and FeSi on Ge substrates at 400 C is reported. Finally, epitaxial growth of FeSi/Ge/FeSi/Ge structures is discussed. These results will be a powerful tool to open up SiGe related spintronics.
Kumano, Mamoru*; Ando, Yuichiro*; Ueda, Koji*; Sado, Taizo*; Narumi, Kazumasa; Maeda, Yoshihito; Miyao, Masanobu*
ECS Transactions, 11(6), p.481 - 485, 2007/00
The effects of the Fe/Si ratios on molecular beam epitaxy (MBE) of FeSi on Ge substrate have been investigated in a wide range of growth temperatures (60300 C). From XRD measurements, it was found that FeSi layers were epitaxially grown on Ge(111) substrates at 60200 C under the stoichiometric (Fe:Si = 3:1) and non-stoichiometric (Fe:Si = 4:1) conditions. From RBS measurement, it was found that atomic mixing of Fe and Ge at FeSi/Ge interfaces began at a growth temperature of 300 C. In the case of MBE under the stoichiometric condition, the crystallinity of FeSi is significantly improved compared to the non-stoichiometric condition. As a result, very low was obtained in a wide temperature (60200 C) under the stoichiometric condition. From the transmission electron microscopy measurements, it was shown that high-quality DO3-type FeSi/Ge structures with atomically flat interfaces were realized at a low temperature (200 C) under the stoichiometric condition.