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Izawa, Yasukazu*; Nishihara, Katsunobu*; Tanuma, Hajime*; Sasaki, Akira; Murakami, Masakatsu*; Sunahara, Atsushi*; Nishimura, Hiroaki*; Fujioka, Shinsuke*; Aota, Tatsuya*; Shimada, Yoshinori*; et al.
Journal of Physics; Conference Series, 112, p.042047_1 - 042047_4, 2008/00
Times Cited Count：8 Percentile：93.75In the development of a high power EUV source used in the EUV lithography system, we have been constructed EUV database of laser-produced tin plasma by the theoretical and experimental studies. On the basis of our understanding, the optimum conditions of lasers and plasmas were clarified, and we proposed the guidelines of laser plasma to obtain clean, efficient and high power EUV source for the practical EUV lithography system. In parallel to such studies, novel targets and high power laser system to generate the optimized EUV source plasma have been developed.
Sunahara, Atsushi*; Sasaki, Akira; Tanuma, Hajime*; Nishihara, Katsunobu*; Nishikawa, Takeshi*; Koike, Fumihiro*; Fujioka, Shinsuke*; Aota, Tatsuya*; Yamaura, Michiteru*; Shimada, Yoshinori*; et al.
Purazuma, Kaku Yugo Gakkai-Shi, 83(11), p.920 - 926, 2007/11
We study the EUV emission from laser produced Sn plasmas using the 1D and 2D radiation hydrodynamics simulation, for the development of EUV source for the next generation semiconductor lithography. The opacity and emissivity of the plasma used in the simulation are calculated by a detailed atomic model, with the accurate wavelength of emission lines obtained from the detailed spectroscopic measurements. Calculation is shown to reproduce the experimental spectrum and conversion efficiency reasonably, including the effect of photo pumping which modifies the EUV emission spectrum in the case with a long scale length of the plasmas.
