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Journal Articles

Time-evolution of thermal oxidation on high-index silicon surfaces; Real-time photoemission spectroscopic study with synchrotron radiation

Ono, Shinya*; Inoue, Kei*; Morimoto, Masahiro*; Arae, Sadanori*; Toyoshima, Hiroaki*; Yoshigoe, Akitaka; Teraoka, Yuden; Ogata, Shoichi*; Yasuda, Tetsuji*; Tanaka, Masatoshi*

Surface Science, 606(21-22), p.1685 - 1692, 2012/11

 Times Cited Count:8 Percentile:37.41(Chemistry, Physical)

Journal Articles

Characterization of initial oxidation process on high-index silicon surfaces by real-time photoemission spectroscopy

Ono, Shinya*; Inoue, Kei*; Morimoto, Masahiro*; Arae, Sadanori*; Toyoshima, Hiroaki*; Yoshigoe, Akitaka; Teraoka, Yuden; Ogata, Shoichi*; Yasuda, Tetsuji*; Tanaka, Masatoshi*

Shingaku Giho, 111(114), p.23 - 27, 2011/07

The initial oxidation on high-index silicon surfaces with (113) and (120) orientations at 820 K has been investigated by real-time X-ray photoemission spectroscopy (Si 2p and O 1s) using 687 eV photons. The time evolutions of the Si$$^{n+}$$ (n=1-4) components in the Si 2p spectrum indicate that the Si$$^{2+}$$ state is suppressed on high-index surfaces compared with Si(001). The O 1s state consists of two components, a low-binding-energy component (LBC) and a high-binding-energy component (HBC). It is suggested that the O atom in strained Si-O-Si contributes to the LBC component. The reaction rates are slower on high-index surfaces compared with that on Si(001).

Oral presentation

Real-time photoemission spectroscopy measurements of high-index Si surfaces

Ono, Shinya*; Inoue, Kei*; Morimoto, Masahiro*; Arae, Sadanori*; Toyoshima, Hiroaki*; Yoshigoe, Akitaka; Teraoka, Yuden; Ogata, Shoichi*; Yasuda, Tetsuji*; Tanaka, Masatoshi*

no journal, , 

A 3$$times$$2 reconstruction surface is made at the Si(113) surface. The oxidation processes by O$$_{2}$$ molecules were observed by real-time photoelectron spectroscopy. All experiments were conducted using the JAEA surface chemistry experimental station at BL23SU in the SPring-8. Time evolution of Si2p and O1s photoelectron spectra were observed. A suboxide Si$$^{3+}$$ component ratio increased during oxidation as the Si(110) surface case. Both of Si(110) and (113) surfaces have a pentagon structure on the reconstruction surface. The increase of Si$$^{3+}$$ component in the oxidation of the Si(11n) surface can be understood as competing formation of an SiO$$_{2}$$/Si(001) type interface and an SiO$$_{2}$$/Si(111) type interface.

Oral presentation

Real-time photoemission spectroscopy measurements of initial oxidation process of high-index Si surfaces

Ono, Shinya*; Inoue, Kei*; Morimoto, Masahiro*; Arae, Sadanori*; Toyoshima, Hiroaki*; Yoshigoe, Akitaka; Teraoka, Yuden; Ogata, Shoichi*; Yasuda, Tetsuji*; Tanaka, Masatoshi*

no journal, , 

no abstracts in English

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