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Arai, Masatoshi*; Andersen, K. H.*; Argyriou, D. N.*; Schweika, W.*; Zanini, L.*; Harjo, S.; Kamiyama, Takashi*; Harada, Masahide
Journal of Neutron Research, 23(4), p.215 - 232, 2021/12
by tuning nematicity and magnetism in FeSe
S
superconductorsMatsuura, Kohei*; Mizukami, Yuta*; Arai, Yuki*; Sugimura, Yuichi*; Maejima, Naoyuki*; Machida, Akihiko*; Watanuki, Tetsu*; Fukuda, Tatsuo; Yajima, Takeshi*; Hiroi, Zenji*; et al.
Nature Communications (Internet), 8, p.1143_1 - 1143_6, 2017/10
Times Cited Count：80 Percentile：91.57(Multidisciplinary Sciences)Eto, Takeharu*; Dao, V. T. S.*; Nguyen, H. D.*; Fife, K.*; Kureta, Masatoshi; Segawa, Mariko; Arai, Masatoshi; Shinohara, Takenao
Proceedings of 2011 International Image Sensor Workshop (IISW), 4 Pages, 2011/06
http://www.imagesensors.org/Past%20Workshops/2011%20Workshop/2011%20Papers/R57_Etoh_HighSpeedCCD.pdfThis paper reviews progress of technologies on ultra-high-speed image sensors with in-situ CCD signal storage. The CCD storage for each pixel has more than one hundred CCD memory elements. Simultaneous parallel recording of signals at all pixels enables ultra-high-speed capturing of consecutive images.
Inamura, Yasuhiro; So, J.-Y.*; Nakajima, Kenji; Suzuki, Jiro*; Nakatani, Takeshi; Kajimoto, Ryoichi; Otomo, Toshiya*; Moon, M.-K.*; Lee, C.-H.*; Yasu, Yoshiji*; et al.
JAEA-Technology 2010-047, 74 Pages, 2011/02
JAEA-Technology-2010-047.pdf:15.03MB
This report summarizes the two-year (2007-2009) activities of Korea-Japan collaboration of chopper software development. Here we have described the background of the collaboration and the main part of our work. We also discussed briefly a future plan of our collaboration starting in 2010. Some of detailed description on the management of the collaboration as well as related information is given in appendix.
Oshima, Takeshi; Lee, K. K.; Ishida, Yuki*; Kojima, Kazutoshi*; Tanaka, Yasunori*; Takahashi, Tetsuo*; Yoshikawa, Masahito; Okumura, Hajime*; Arai, Kazuo*; Kamiya, Tomihiro
Materials Science Forum, 457-460(Part2), p.1405 - 1408, 2004/06
The electrical characteristics of cubic silicon carbide (3C-SiC) Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) with the current direction in the inversion layer perpendicular to [-110] ([-110]-perpendicular MOSFETs) were compared to those of 3C-SiC MOSFETs with the current direction in the inversion layer parallel to [-110] ([-110]-parallel MOSFETs). The threshold voltage (V
) for both MOSFETs shows -0.5 V although enhancement type MOSFETs were designed. The values of channel mobility which was estimated from linear region of drain current (I
) - drain voltage (V) curves are 230 cm
/Vs for [-110]-perpendicular MOSFETs and 215 cm/Vs for [-110]-parallel MOSFETs, indicating no significant difference between both MOSFETs. The value of I for [-110]-perpendicular MOSFETs is of order of 10-8 A at V = 10V and gate voltage (V
) of -2V. However, for [-110]-parallel MOSFETs, I shows of order of -10-6 A at V = 10V and V = -2V.
Arai, K.*; Ninomiya, Akira*; Ishigooka, Takeshi*; Takano, Katsutoshi*; Nakajima, Hideo; Michael, P.*; Vieira, R.*; Martovetsky, N.*; Sborchia, C.*; Alekseev, A.*; et al.
Cryogenics, 44(1), p.15 - 27, 2004/01
Times Cited Count：3 Percentile：15.47(Thermodynamics)no abstracts in English
Oshima, Takeshi; Lee, K. K.; Ishida, Yuki*; Kojima, Kazutoshi*; Tanaka, Yasunori*; Takahashi, Tetsuo*; Yoshikawa, Masahito; Okumura, Hajime*; Arai, Kazuo*; Kamiya, Tomihiro
Japanese Journal of Applied Physics, Part 2, 42(6B), p.L625 - L627, 2003/06
Times Cited Count：39 Percentile：77.43(Physics, Applied)The n-channel Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) were fabricated on cubic silicon carbide (3C-SiC) epitaxial layers grown on 3C-SiC substrates. The gate oxide of the MOSFETs was formed using pyrogenic oxidation at 1100
C. The 3C-SiC MOSFETs showed enhancement type behaviors after annealing at 200C for 30 min in argon atmosphere. The maximum value of the effective channel mobility of the 3C-SiC MOSFETs was 260 cm/Vs. The leakage current of gate oxide was of a few tens of nA/cm at an electric field range below 8.5 MV/cm, and breakdown began around 8.5 MV/cm.
Kato, Takashi; Tsuji, Hiroshi; Ando, Toshinari; Takahashi, Yoshikazu; Nakajima, Hideo; Sugimoto, Makoto; Isono, Takaaki; Koizumi, Norikiyo; Kawano, Katsumi; Oshikiri, Masayuki*; et al.
Fusion Engineering and Design, 56-57, p.59 - 70, 2001/10
Times Cited Count：17 Percentile：74.85(Nuclear Science & Technology)no abstracts in English
Tsuji, Hiroshi; Okuno, Kiyoshi*; Thome, R.*; Salpietro, E.*; Egorov, S. A.*; Martovetsky, N.*; Ricci, M.*; Zanino, R.*; Zahn, G.*; Martinez, A.*; et al.
Nuclear Fusion, 41(5), p.645 - 651, 2001/05
Times Cited Count：57 Percentile：83.02(Physics, Fluids & Plasmas)no abstracts in English
Serizawa, Hiroyuki; Nakajima, Kunihisa; Arai, Yasuo; Yamashita, Toshiyuki; Kuramoto, Kenichi; Kinoshita, H.*; Yamanaka, Shinsuke*; Uno, Masayoshi*; Kurosaki, K.*
Progress in Nuclear Energy, 38(3-4), p.237 - 240, 2001/02
Times Cited Count：5 Percentile：38.97(Nuclear Science & Technology)no abstracts in English
/Si studied by slow positron beamKawasuso, Atsuo; Arai, H.*; Hirata, K.*; Sekiguchi, T.*; Kobayashi, Yoshinori*; Okada, Sohei
Radiation Physics and Chemistry, 58(5-6), p.615 - 619, 2000/06
Times Cited Count：3 Percentile：26.42(Chemistry, Physical)no abstracts in English
Oku, Tatsuo*; Kurumada, A.*; Nakata, M.*; Takeda, K.*; Kawamata, K.*; Arai, Taketoshi; Ishihara, Masahiro
Proceedings of 24th Biennial Conference on Carbon (CARBON '99), p.574 - 575, 1999/07
no abstracts in English
Moriyama, Shinichi; Kimura, Haruyuki; Fujii, Tsuneyuki; Saigusa, Mikio*; Imai, Tsuyoshi; Yamamoto, Takumi; Arai, H.*; Ota, K.*
Fusion Engineering and Design, 45(1), p.31 - 40, 1999/00
Times Cited Count：2 Percentile：21.17(Nuclear Science & Technology)no abstracts in English
Moriyama, Shinichi; Fujii, Tsuneyuki; Kimura, Haruyuki; Arai, Hiroyuki*; Ota, K.*
Proceedings of the 18th IEEE/NPSS Symposium on Fusion Engineering (SOFE '99), p.399 - 402, 1999/00
no abstracts in English
Kageyama, H.*; Kawatsura, Kiyoshi*; Takahashi, R.*; Arai, Shigeyoshi*; Kambara, Tadashi*; Oura, Masaki*; Papp, T.*; Kanai, Yasuyuki*; Awaya, Yoko*; Takeshita, Hidefumi; et al.
Nuclear Instruments and Methods in Physics Research B, 107(1-4), p.47 - 50, 1996/00
Times Cited Count：2 Percentile：31.89(Instruments & Instrumentation)no abstracts in English