JAEA
  • help
  • PC | SP
  • JP | EN
          
Refine your search：     
Report No.
 - 
Clear All
Search Results: Records 1-9 displayed on this page of 9
  • 1

Presentation/Publication Type

Initialising ...

Refine

Journal/Book Title

Initialising ...

Meeting title

Initialising ...

First Author

Initialising ...

Keyword

Initialising ...

Language

Initialising ...

Publication Year

Initialising ...

Held year of conference

Initialising ...

Save select records

Journal Articles

$$^{13}$$C-selective infrared multiple photon dissociation of $$beta$$-propiolactone by a free electron laser

Miyomoto, Yoshiki*; Majima, Tetsuro*; Arai, Shigeyoshi*; Katsumata, Keiichi*; Akagi, Hiroshi; Maeda, Akihiko*; Hata, hiroo*; Kuramochi, Koji*; Kato, Yoshiyasu*; Tsukiyama, Koichi*

Nuclear Instruments and Methods in Physics Research B, 269(2), p.180 - 184, 2011/01

https://doi.org/10.1016/j.nimb.2010.10.026
 Times Cited Count：11 Percentile：67.63(Instruments & Instrumentation)

Journal Articles

Silicon isotope separation utilizing infrared multiphoton dissociation of Si$$_{2}$$F$$_{6}$$ irradiated with two-frequency CO$$_{2}$$ laser lights

Yokoyama, Atsushi; Oba, Hironori; Hashimoto, Masashi; Katsumata, Keiichi; Akagi, Hiroshi; Ishii, Takeshi*; Oya, Akio*; Arai, Shigeyoshi*

Applied Physics B, 79(7), p.883 - 889, 2004/11

https://doi.org/10.1007/s00340-004-1642-z
 Times Cited Count：9 Percentile：42.98(Optics)

Silicon isotope separation has been done utilizing the Infrared Multiphoton Dissociation of Si$$_{2}$$F$$_{6}$$ irradiated with two-frequency CO$$_{2}$$ laser lights. The two-frequency excitation method improved the separation efficiency with keeping the high enrichment factors. For example, Si$$_{2}$$F$$_{6}$$ with the $$^{28}$$Si fraction of 99.4 % was obtained at 40.0 % dissociation of Si$$_{2}$$F$$_{6}$$ after the simultaneous irradiation of 100 pulses with 966.23 cm$$^{-1}$$ photons (0.089 J/cm$$^{2}$$) and 954.55 cm$$^{-1}$$ photons (0.92 J/cm$$^{2}$$), while 1000 pulses were needed to obtain 99.0 % of $$^{28}$$Si at 27.2 % dissociation in the case of single frequency irradiation at 954.55 cm$$^{-1}$$ (0.92 J/cm$$^{2}$$). The single-step enrichment factors of $$^{29}$$Si and $$^{30}$$Si increased with increasing Si$$_{2}$$F$$_{6}$$ pressure. The reason for this enhancement has been discussed in terms of the rotational and vibrational relaxations by collisions with ambient gases.

Journal Articles

High enrichment of $$^{28}$$Si by infrared multiple photon decomposition of Si$$_{2}$$F$$_{6}$$

Yokoyama, Atsushi; Oba, Hironori; Shibata, Takemasa; Kawanishi, Shunichi*; Sugimoto, Shunichi*; Ishii, Takeshi*; Oya, Akio*; Miyamoto, Yoshiki*; Isomura, Shohei*; Arai, Shigeyoshi*

Journal of Nuclear Science and Technology, 39(4), p.457 - 462, 2002/04

https://doi.org/10.3327/jnst.39.457
 Times Cited Count：2 Percentile：17.46(Nuclear Science & Technology)

no abstracts in English

Journal Articles

Emission characteristics of silver atoms in $$gamma$$-irradiated organic solid solutions at 77K

*; Hase, Hirotomo*; *; Taguchi, Mitsumasa; *; Arai, Shigeyoshi*

Journal of Physical Chemistry B, 102(43), p.8389 - 8394, 1998/00

https://doi.org/10.1021/jp981751e
 Times Cited Count：6 Percentile：22.37(Chemistry, Physical)

no abstracts in English

Journal Articles

Emission and excitation spectra of silver atoms in $$gamma$$-irradiated aqueous, ethanol, and 2-methyltetrahydrofuran solutions at 77K

*; *; *; ; Arai, Shigeyoshi*

Radiation Physics and Chemistry, 49(1), p.59 - 65, 1997/00

https://doi.org/10.1016/S0969-806X(96)00107-7
 Times Cited Count：8 Percentile：57.02(Chemistry, Physical)

no abstracts in English

Journal Articles

L X-ray spectra of Fe and Cu by 0.75 MeV/u H, He, Si and Ar ion impacts

Kageyama, H.*; Kawatsura, Kiyoshi*; Takahashi, R.*; Arai, Shigeyoshi*; Kambara, Tadashi*; Oura, Masaki*; Papp, T.*; Kanai, Yasuyuki*; Awaya, Yoko*; Takeshita, Hidefumi; et al.

Nuclear Instruments and Methods in Physics Research B, 107(1-4), p.47 - 50, 1996/00

https://doi.org/10.1016/0168-583X(95)00838-1
 Times Cited Count：2 Percentile：32.16(Instruments & Instrumentation)

no abstracts in English

Journal Articles

High energy Ni ion implantation and thermal annealing for $$alpha$$-SiC single crystal

*; Kawatsura, Kiyoshi*; Arai, Shigeyoshi*; *; *; *; *; Takeshita, Hidefumi; Yamamoto, Shunya; Aoki, Yasushi; et al.

Nuclear Instruments and Methods in Physics Research B, 91, p.529 - 533, 1994/00

https://doi.org/10.1016/0168-583X(94)96280-4
 Times Cited Count：3 Percentile：43.77(Instruments & Instrumentation)

no abstracts in English

Journal Articles

PIXE and RBS study of radiation-induced segregation in single crystal austenitic stainless steel SUS 304

Kawatsura, Kiyoshi*; *; *; *; Arai, Shigeyoshi*; *; *; *; *; *; et al.

Nuclear Instruments and Methods in Physics Research B, 75, p.367 - 370, 1993/00

https://doi.org/10.1016/0168-583X(93)95677-W

no abstracts in English

Journal Articles

Change in surface chemical state of polyethersulfone by excimer laser irradiation

Sugimoto, Shunichi; Kawanishi, Shunichi; Shimizu, Yuichi; Suzuki, Nobutake; *; Arai, Shigeyoshi*

RTM-91-37, p.27 - 32, 1991/00

no abstracts in English

9 (Records 1-9 displayed on this page)
  • 1