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7 heteroepitaxial growthAsaoka, Hidehito; Yamazaki, Tatsuya; Shamoto, Shinichi; Arnoldo, A.*; Goto, Seiichi*; Suemitsu, Maki*
Hyomen Kagaku, 28(9), p.500 - 503, 2007/09
Stress evolution during initial stage of Ge nanodot formation on Si(111)-77 has been investigated by using simultaneous measurements of the substrate curvature and the surface morphology. In the beginning of the first bilayer growth of Ge on Si(111)-77, a strong compressive film stress is observed, indicating a formation of a two-dimensional wetting layer. When the layer thickness approaches the critical one for three-dimensional nanodot nucleation, a clear bend in the stress curve is observed, corresponding to a partial relaxation of the lattice planes on the surface of the nanodots. Moreover, a stress transition has been also found to exist in the very early stage of the nanodot formation, which is concurrent with the trench formation around the three-dimensional nanodots.
1 and Si(111)77 surfacesAsaoka, Hidehito; Yamazaki, Tatsuya; Shamoto, Shinichi; Arnoldo, A.*; Suemitsu, Maki*
no journal, ,
no abstracts in English
Asaoka, Hidehito; Yamada, Yoichi; Yamazaki, Tatsuya; Girard, A.*; Yamamoto, Hiroyuki; Shamoto, Shinichi; Arnoldo, A.*; Goto, Seiichi*; Suemitsu, Maki*
no journal, ,
We reports the recent progress about structural formation on semiconductor surface: real-time stress analysis of Ge nanodot growth on Si(111)-77 surfaces, and preparation of the single-domained Si(110)-162 surface.
