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Schreiber, F.*; Meer, H.*; Schmitt, C.*; Ramos, R.*; 齊藤 英治; Baldrati, L.*; Kl
ui, M.*
Physical Review Applied (Internet), 16(6), p.064023_1 - 064023_9, 2021/12
被引用回数：3 パーセンタイル：26.56(Physics, Applied)We analyze the complex impact of the local magnetic spin texture on the transverse Hall-type voltage in device structures utilized to measure magnetoresistance effects. We find a highly localized and asymmetric magnetic sensitivity in the eight-terminal geometries that are frequently used in current-induced switching experiments, for instance, to probe antiferromagnetic materials. Using current-induced switching of antiferromagnetic NiO/Pt as an example, we estimate the change in the spin Hall magnetoresistance signal associated with switching events based on the domain-switching patterns observed via direct imaging. This estimate correlates with the actual electrical data after subtraction of a nonmagnetic contribution. Here, the consistency of the correlation across three measurement geometries with fundamentally different switching patterns strongly indicates a magnetic origin of the measured and analyzed electrical signals.
Meer, H.*; Schreiber, F.*; Schmitt, C.*; Ramos, R.*; 齊藤 英治; Gomonay, O.*; Sinova, J.*; Baldrati, L.*; Klui, M.*
Nano Letters, 21(1), p.114 - 119, 2021/01
被引用回数：54 パーセンタイル：96.96(Chemistry, Multidisciplinary)We unravel the origin of current-induced magnetic switching of insulating antiferromagnet/heavy metal systems. We utilize concurrent transport and magneto-optical measurements to image the switching of antiferromagnetic domains in specially engineered devices of NiO/Pt bilayers. Different electrical pulsing and device geometries reveal different final states of the switching with respect to the current direction. We can explain these through simulations of the temperature-induced strain, and we identify the thermomagnetoelastic switching mechanism combined with thermal excitations as the origin, in which the final state is defined by the strain distributions and heat is required to switch the antiferromagnetic domains. We show that such a potentially very versatile noncontact mechanism can explain the previously reported contradicting observations of the switching final state, which were attributed to spin-orbit torque mechanisms.
Schreiber, F.*; Baldrati, L.*; Schmitt, C.*; Ramos, R.*; 齊藤 英治; Lebrun, R.*; Klui, M.*
Applied Physics Letters, 117(8), p.082401_1 - 082401_5, 2020/08
被引用回数：25 パーセンタイル：83.63(Physics, Applied)We demonstrate stable and reversible current induced switching of large-area (
100 
m
) antiferromagnetic domains in NiO/Pt by performing concurrent transport and magneto-optical imaging measurements in an adapted Kerr microscope. By correlating the magnetic images of the antiferromagnetic domain changes and magneto-transport signal response in these current-induced switching experiments, we disentangle magnetic and non-magnetic contributions to the transport signal. Our table-top approach establishes a robust procedure to subtract the non-magnetic contributions in the transport signal and extract the spin-Hall magnetoresistance response associated with the switching of the antiferromagnetic domains, enabling one to deduce details of the antiferromagnetic switching from simple transport measurements.
Baldrati, L.*; Schmitt, C.*; Gomonay, O.*; Lebrun, R.*; Ramos, R.*; 齊藤 英治; Sinova, J.*; Klui, M.*
Physical Review Letters, 125(7), p.077201_1 - 077201_6, 2020/08
被引用回数：36 パーセンタイル：91.52(Physics, Multidisciplinary)We achieve current-induced switching in collinear insulating antiferromagnetic CoO/Pt, with fourfold in-plane magnetic anisotropy. This is measured electrically by spin Hall magnetoresistance and confirmed by the magnetic field-induced spin-flop transition of the CoO layer. By applying current pulses and magnetic fields, we quantify the efficiency of the acting current-induced torques and estimate a current-field equivalence ratio of 
TA
m. The N
el vector final state 
is in line with a thermomagnetoelastic switching mechanism for a negative magnetoelastic constant of the CoO.
el order switching in antiferromagnetic thin films revealed by magnetotransport and direct imagingBaldrati, L.*; Gomonay, O.*; Ross, A.*; Filianina, M.*; Lebrun, R.*; Ramos, R.*; Leveille, C.*; Fuhrmann, F.*; Forrest, T. R.*; Maccherozzi, F.*; et al.
Physical Review Letters, 123(17), p.177201_1 - 177201_6, 2019/10
被引用回数：118 パーセンタイル：98.37(Physics, Multidisciplinary)We probe the current-induced magnetic switching of insulating antiferromagnet-heavy-metal systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We observe switching of more than one-third of the antiferromagnetic domains by the application of current pulses. Our data reveal two different magnetic switching mechanisms leading together to an efficient switching, namely, the spin-current induced effective magnetic anisotropy variation and the action of the spin torque on the DWs.
-Fe
O
/NiO/Pt epitaxial stacksDong, B.-W.*; Baldrati, L.*; Schneider, C.*; 新関 友彦*; Ramos, R.*; Ross, A.*; Cramer, J.*; 齊藤 英治; Klui, M.*
Applied Physics Letters, 114(10), p.102405_1 - 102405_5, 2019/03
被引用回数：11 パーセンタイル：52.56(Physics, Applied)We study the spin Hall magnetoresistance (SMR) in epitaxial -FeO/NiO(001)/Pt stacks, as a function of temperature and thickness of the antiferromagnetic insulating NiO layer. Upon increasing the thickness of NiO from 0 nm to 10 nm, we detect a sign change of the SMR in the temperature range between 10 K and 280 K. This temperature dependence of the SMR in our stacks is different compared to that of previously studied yttrium iron garnet/NiO/Pt, as we do not find any peak or sign change as a function of temperature. We explain our data by a combination of spin current reflection from both the NiO/Pt and -FeO/NiO interfaces and the thickness-dependent exchange coupling mode between the NiO and -FeO layers, comprising parallel alignment for thin NiO and perpendicular alignment for thick NiO.
