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論文

Anomalous Nernst effect of Fe$$_{3}$$O$$_{4}$$ single crystal

Ramos, R.*; Aguirre, M. H.*; Anad$'o$n, A.*; Blasco, J.*; Lucas, I.*; 内田 健一*; Algarabel, P. A.*; Morell$'o$n, L.*; 齊藤 英治; Ibarra, M. R.*

Physical Review B, 90(5), p.054422_1 - 054422_6, 2014/08

 被引用回数:50 パーセンタイル:9.36(Materials Science, Multidisciplinary)

We report a complete characterization of the anomalous Nernst effect (ANE) and its relationship with the anomalous Hall effect (AHE) in Fe$$_{3}$$O$$_{4}$$. By combining full thermoelectric and electric transport measurements as a function of temperature, we have verified that the universal scaling relation between the anomalous Hall and diagonal conductivities, observed in materials with bad-metal-hopping type of conduction, is also applicable to the thermoelectric transport. We further show that the ANE and AHE are commonly related through the Mott relation, therefore demonstrating its validity for anomalous transport phenomena in materials with conduction in the dirty regime.

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