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Journal Articles

(Nitrogen/vacancy)-complex formation in SiC; Experiment and theory

Pensl, G.*; Schmid, F.*; Reshanov, S.*; Weber, H. B.*; Bockstedte, M.*; Mattausch, A.*; Pankratov, O.*; Oshima, Takeshi; Ito, Hisayoshi

Materials Science Forum, 556-557, p.307 - 312, 2007/00

no abstracts in English

Journal Articles

Deactivation of nitrogen donors in silicon carbide

Schmid, F.*; Reshanov, S. A.*; Weber, H. B.*; Pensl, G.*; Bockstedte, M.*; Mattausch, A.*; Pankratov, O.*; Oshima, Takeshi; Ito, Hisayoshi

Physical Review B, 74(24), p.245212_1 - 245212_11, 2006/12

 Times Cited Count:11 Percentile:50.66(Materials Science, Multidisciplinary)

Hexagonal SiC is co-implanted with silicon Si$$^{+}$$, carbon C$$^{+}$$, or neon Ne$$^{+}$$ ions along with nitrogen N$$^{+}$$ ions. Also hexagonal SiC irradiated with electrons e$$^{-}$$ of 200 keV energy. During the subsequent annealing step at temperatures above 1450 $$^{circ}$$C a deactivation of N donors and a reduction of the compensation are observed in the case of the Si$$^{+}$$/N$$^{+}$$ co-implantation and e$$^{-}$$ irradiation. Using Hall measurement, the N donor deactivation is studied as a function of the concentration of the co-implanted species and the annealing temperature. The formation of energetically deep defects is analyzed with deep level transient spectroscopy. A detailed theoretical analysis based on the density functional theory is conducted; it takes into account the kinetic mechanisms for the formation of N interstitial clusters and N-vacancy complexes. In accordance with all the experimental results, this analysis distinctly indicates that the (N$$ _{C}$$)$$_ {4}$$-V$$_{Si}$$ complex, which is thermally stable at high temperatures, is responsible for the N donor deactivation.

Journal Articles

Identification of divacancies in 4H-SiC

Son, N. T.*; Umeda, Takahide*; Isoya, Junichi*; Gali, A.*; Bockstedte, M.*; Magnusson, B.*; Ellison, A.*; Morishita, Norio; Oshima, Takeshi; Ito, Hisayoshi; et al.

Physica B; Condensed Matter, 376-377, p.334 - 337, 2006/04

 Times Cited Count:3 Percentile:80.94(Physics, Condensed Matter)

no abstracts in English

Journal Articles

Identification of the carbon antisite-vacancy pair in 4${it H}$-SiC

Umeda, Takahide*; Son, N. T.*; Isoya, Junichi*; Janz$'e$n, E.*; Oshima, Takeshi; Morishita, Norio; Ito, Hisayoshi; Gali, A.*; Bockstedte, M.*

Physical Review Letters, 96(14), p.145501_1 - 145501_4, 2006/04

 Times Cited Count:74 Percentile:9.01(Physics, Multidisciplinary)

no abstracts in English

Journal Articles

Divacancy in 4H-SiC

Son, N. T.*; Carlsson, P.*; Hassan, J. ul*; Janz$'e$n, E.*; Umeda, Takahide*; Isoya, Junichi*; Gali, A.*; Bockstedte, M.*; Morishita, Norio; Oshima, Takeshi; et al.

Physical Review Letters, 96(5), p.055501_1 - 055501_4, 2006/02

 Times Cited Count:156 Percentile:3.21(Physics, Multidisciplinary)

no abstracts in English

Journal Articles

Divacancy model for P6/P7 centers in 4H- and 6H-SiC

Son, N. T.*; Umeda, Takahide*; Isoya, Junichi*; Gali, A.*; Bockstedte, M.*; Magnusson, B.*; Ellison, A.*; Morishita, Norio; Oshima, Takeshi; Ito, Hisayoshi; et al.

Materials Science Forum, 527-529, p.527 - 530, 2006/00

no abstracts in English

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