Majority- and minority-carrier deep level traps in proton-irradiated -InGaP space solar cells

Dharmarasu, N.*; Yamaguchi, Masafumi*; Bourgoin, J. C.*; Takamoto, Tatsuya*; Oshima, Takeshi; Ito, Hisayoshi; Imaizumi, Mitsuru*; Matsuda, Sumio*

Applied Physics Letters, 81(1), p.64 - 66, 2002/07

https://doi.org/10.1063/1.1491005

We studied the properties of observed defects in n/p-InGaP solar cells created by irradiation of protons with different energies.Three majority (hole) and a minority-carrier traps, labeled respectively as HP1 (E+0.900.05eV), HP2 (E+0.730.05eV), H2 (E +0.55eV),and EP1 (E 0.54eV),were identified using deep level transient spectroscopy. All majority-carrier traps were found to act as recombination centers. While the H2 traps present in the proton-irradiated p-InGaP was found to anneal out by minority-carrier injection, the other traps were not.