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Journal Articles

The Physical origin of the InSb(111)A surface reconstruction transient

Proessdorf, A.*; Rodenbach, P.*; Grosse, F.*; Hanke, M.*; Braun, W.*; Riechert, H.*; Hu, W.; Fujikawa, Seiji*; Kozu, Miwa; Takahashi, Masamitsu

Surface Science, 606(17-18), p.1458 - 1461, 2012/09

https://doi.org/10.1016/j.susc.2012.05.017
 Times Cited Count：1 Percentile：4.23(Chemistry, Physical)

Journal Articles

GaSb(001) surface reconstructions measured at the growth front by surface X-ray diffraction

Tinkham, B. P.*; Romanyuk, O.*; Braun, W.*; Ploog, K. H.*; Grosse, F.*; Takahashi, Masamitsu; Kaizu, Toshiyuki*; Mizuki, Junichiro

Journal of Electronic Materials, 37(12), p.1793 - 1798, 2008/12

https://doi.org/10.1007/s11664-008-0557-6
 Times Cited Count：4 Percentile：30.00(Engineering, Electrical & Electronic)

Journal Articles

As-rich InAs(001)-(2$$times$$4) phases investigated by ${it in situ}$ surface X-ray diffraction

Tinkham, B. P.*; Braun, W.*; Ploog, K. H.*; Takahashi, Masamitsu; Mizuki, Junichiro; Grosse, F.*

Journal of Vacuum Science and Technology B, 26(4), p.1516 - 1520, 2008/07

https://doi.org/10.1116/1.2918314
 Times Cited Count：3 Percentile：25.30(Engineering, Electrical & Electronic)

Journal Articles

Structure and stability of Pr$$_2$$O$$_3$$/Si(001) heterostructures grown by molecular beam epitaxy using a high temperature effusion source

Tinkham, B. P.*; Takahashi, Masamitsu; Jenichen, B.*; Watahiki, Tatsuro*; Braun, W.*; Ploog, K. H.*

Semiconductor Science and Technology, 21(12), p.1552 - 1556, 2006/12

https://doi.org/10.1088/0268-1242/21/12/009
 Times Cited Count：6 Percentile：36.31(Engineering, Electrical & Electronic)

The structure of epitaxially grown Pr$$_2$$O$$_3$$ on Si(001) has been investigated by grazing incidence X-ray diffraction and X-ray reflectivity. We report experimental results from measurements made in situ, after growth, and during annealing to determine the stability of Pr$$_2$$O$$_3$$ at temperatures relevant for complementary metal oxide semiconductor (CMOS) processing. Pr$$_6$$O$$_{11}$$ is evaporated and converted to Pr$$_2$$O$$_3$$ using an effusion source operating at 1970$$^{circ}$$C. Two different phases of Pr$$_2$$O$$_3$$ have been identified in the as-grown films in addition to a silicate layer that forms upon nucleation at the Si interface. The cubic Pr$$_2$$O$$_3$$ nucleates as a single crystal and grows in greater proportion to the polycrystalline hexagonal Pr$$_2$$O$$_3$$. The crystal structure of the as-grown film is stable during annealing up to about 800$$^circ$$C at which point the Pr$$_2$$O$$_3$$ is consumed at the expense of the silicate phase.

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