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Hosoi, Takuji*; Kirino, Takashi*; Uenishi, Yusuke*; Ikeguchi, Daisuke*; Chanthaphan, A.*; Yoshigoe, Akitaka; Teraoka, Yuden; Mitani, Shuhei*; Nakano, Yuki*; Nakamura, Takashi*; et al.
Workshop digest of 2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2012), p.22 - 25, 2012/06
/4H-SiC interfaceHosoi, Takuji*; Kirino, Takashi*; Chanthaphan, A.*; Uenishi, Yusuke*; Ikeguchi, Daisuke*; Yoshigoe, Akitaka; Teraoka, Yuden; Mitani, Shuhei*; Nakano, Yuki*; Nakamura, Takashi*; et al.
Materials Science Forum, 717-720, p.721 - 724, 2012/05
Times Cited Count：5 Percentile：90.61(Materials Science, Multidisciplinary)Watanabe, Heiji*; Hosoi, Takuji*; Kirino, Takashi*; Uenishi, Yusuke*; Chanthaphan, A.*; Yoshigoe, Akitaka; Teraoka, Yuden; Mitani, Shuhei*; Nakano, Yuki*; Nakamura, Takashi*; et al.
Materials Science Forum, 717-720, p.697 - 702, 2012/05
Times Cited Count：2 Percentile：72.03(Materials Science, Multidisciplinary)/4H-SiC(0001) interface and its correlation with electrical propertiesWatanabe, Heiji*; Hosoi, Takuji*; Kirino, Takashi*; Kagei, Yusuke*; Uenishi, Yusuke*; Chanthaphan, A.*; Yoshigoe, Akitaka; Teraoka, Yuden; Shimura, Takayoshi*
Applied Physics Letters, 99(2), p.021907_1 - 021907_3, 2011/07
Times Cited Count：123 Percentile：95.50(Physics, Applied) gate dielectrics for SiC power devicesWatanabe, Heiji*; Kirino, Takashi*; Uenishi, Yusuke*; Chanthaphan, A.*; Yoshigoe, Akitaka; Teraoka, Yuden; Mitani, Shuhei*; Nakano, Yuki*; Nakamura, Takashi*; Hosoi, Takuji*; et al.
ECS Transactions, 35(2), p.265 - 274, 2011/05
Times Cited Count：8 Percentile：92.63(Electrochemistry)Watanabe, Heiji*; Hosoi, Takuji*; Kirino, Takashi*; Uenishi, Yusuke*; Chanthaphan, A.*; Ikeguchi, Daisuke*; Yoshigoe, Akitaka; Teraoka, Yuden; Mitani, Shuhei*; Nakano, Yuki*; et al.
ECS Transactions, 41(3), p.77 - 90, 2011/00
Times Cited Count：5 Percentile：89.76(Electrochemistry)Hosoi, Takuji*; Kirino, Takashi*; Chanthaphan, A.*; Ikeguchi, Daisuke*; Yoshigoe, Akitaka; Teraoka, Yuden; Mitani, Shuhei*; Nakano, Yuki*; Nakamura, Takashi*; Shimura, Takayoshi*; et al.
no journal, ,
no abstracts in English
/SiC interface structure and conduction band offsetKirino, Takashi*; Chanthaphan, A.*; Ikeguchi, Daisuke*; Yoshigoe, Akitaka; Teraoka, Yuden; Mitani, Shuhei*; Nakano, Yuki*; Nakamura, Takashi*; Hosoi, Takuji*; Shimura, Takayoshi*; et al.
no journal, ,
In order to investigate correlation between a conduction band offset and the interface characteristics of SiO/SiC structure, synchrotron radiation XPS have been conducted for the SiO/SiC structure formed by sputtering and thermal oxidation. In the SiO/SiC interface formed by sputtering, higher oxidation number components decreased and the total amount of suboxides was small comparing with thermal oxidation. Furthermore, an SiO photoemission peak of the sputtering sample was shifted to higher binding energy side by 0.24 eV, and a conduction band offset was smaller comparing with the thermal oxide sample. The SiO band gap was evaluated from an O1s energy loss spectrum, and the valence band offset was also obtained from a valence band photoemission spectrum. The conduction band offset for the sputtering sample was smaller by 0.35 eV comparing with the thermal oxide sample.
/4H-SiC interface passivalon on energy band alignment between SiO and 4H-SiCHosoi, Takuji*; Kirino, Takashi*; Chanthaphan, A.*; Ikeguchi, Daisuke*; Yoshigoe, Akitaka; Teraoka, Yuden; Mitani, Shuhei*; Nakano, Yuki*; Nakamura, Takashi*; Shimura, Takayoshi*; et al.
no journal, ,
A balence band off-set of SiO/SiC interface, which affects the reliability of SiC-MOS devises, was evaluated by synchrotron radiation photoemission spectroscopy. An SiO film formed by sputtering deposition showed smaller off-set than that of thermal oxide film. Interface defects, originate in carbon impurities, and balence band off-set of thermal SiO/SiC interface were decreased by annealing in the high temperature hydrogen gas.
