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Ling, B.-K.*; Chang, M.*; Zhai, Y.-Q.*; Deng, J.*; Kofu, Maiko*; Guo, H.*; Zhao, J.*; Fu, Z.*; Zheng, Y.-Z.*
Journal of the American Chemical Society, 147(13), p.10935 - 10942, 2025/03
Times Cited Count：0 Percentile：0.00(Chemistry, Multidisciplinary)Deng, Y.*; Watanabe, Yukinobu*; Manabe, Seiya*; Liao, W.*; Hashimoto, Masanori*; Abe, Shinichiro; Tampo, Motonobu*; Miyake, Yasuhiro*
IEEE Transactions on Nuclear Science, 71(4, Part 2), p.912 - 920, 2024/04
Times Cited Count：0 Percentile：0.00(Engineering, Electrical & Electronic)With the miniaturization of semiconductors and the decrease in operating voltage, there is a growing interest and discussion in whether the muons in cosmic rays may be the source of single event upsets (SEUs). In the case of neutron-induced SEUs, it was reported that the irradiation side has the impact on SEU cross sections. Here, to investigate the impact of irradiation direction on muon-induced SEUs, we have measured and simulate muon-induced SEUs in 65-nm bulk SRAMs with different muon irradiation directions. It was found that the peak SEU cross section for the package side irradiation is about twice large as that for the board side irradiation. We also revealed that the difference in observed SEU cross sections between the package side and the board side irradiation is caused by differences in energy straggling due to changes in penetration depth depending on the incident direction.
SnHuang, Z.*; Wang, W.*; Ye, H.*; Bao, S.*; Shangguan, Y.*; Liao, J.*; Cao, S.*; Kajimoto, Ryoichi; Ikeuchi, Kazuhiko*; Deng, G.*; et al.
Physical Review B, 109(1), p.014434_1 - 014434_9, 2024/01
Times Cited Count：2 Percentile：46.22(Materials Science, Multidisciplinary)Yang, D. S.*; Wu, Y.*; Kanatzidis, E. E.*; Avila, R.*; Zhou, M.*; Bai, Y.*; Chen, S.*; Sekine, Yurina; Kim, J.*; Deng, Y.*; et al.
Materials Horizons, 10(11), p.4992 - 5003, 2023/09
Times Cited Count：12 Percentile：0.00(Chemistry, Multidisciplinary)This paper presents a set of findings that enhances the performance of these systems through the use of microfluidic networks, integrated valves and microscale optical cuvettes formed by three-dimensional printing in hard/soft hybrid materials systems, for accurate spectroscopic and fluorometric assays. Field studies demonstrate the capability of these microcuvette systems to evaluate the concentrations of copper, chloride, and glucose in sweat, along with the sweat pH, with laboratory grade accuracy and sensitivity.
Li, S.; Yamaguchi, Yoshihito; Katsuyama, Jinya; Li, Y.; Deng, D.*
Proceedings of ASME 2023 Pressure Vessels and Piping Conference (PVP 2023) (Internet), 7 Pages, 2023/07
Fe
intermetallic compoundCao, Y.*; Zhou, H.*; Khmelevskyi, S.*; Lin, K.*; Avdeev, M.*; Wang, C.-W.*; Wang, B.*; Hu, F.*; Kato, Kenichi*; Hattori, Takanori; et al.
Chemistry of Materials, 35(8), p.3249 - 3255, 2023/04
Times Cited Count：2 Percentile：23.35(Chemistry, Physical)Hydrostatic and chemical pressure are efficient stimuli to alter the crystal structure and are commonly used for tuning electronic and magnetic properties in materials science. However, chemical pressure is difficult to quantify and a clear correspondence between these two types of pressure is still lacking. Here, we study intermetallic candidates for a permanent magnet with a negative thermal expansion (NTE). Based on in situ synchrotron X-ray diffraction, negative chemical pressure is revealed in HoFe on Al doping and quantitatively evaluated by using temperature and pressure dependence of unit cell volume. A combination of magnetization and neutron diffraction measurements also allowed one to compare the effect of chemical pressure on magnetic ordering with that of hydrostatic pressure. Intriguingly, pressure can be used to control suppression and enhancement of NTE. Electronic structure calculations indicate that pressure affected the top of the majority band with respect to the Fermi level, which has implications for the magnetic stability, which in turn plays a critical role in modulating magnetism and NTE. This work presents a good example of understanding the effect of pressure and utilizing it to control properties of functional materials.
Wang, Y.-Q.*; Gai, W.-Z.*; Zhang, X.-Y.*; Pan, H.-Y.*; Cheng, Z.-X.*; Xu, P. G.; Deng, Z.-Y.*
RSC Advances (Internet), 7(4), p.2103 - 2109, 2017/01
Times Cited Count：28 Percentile：63.79(Chemistry, Multidisciplinary)
suspensionLiang, G.-H.*; Gai, W.-Z.*; Deng, Z.-Y.*; Xu, P. G.; Cheng, Z.*
RSC Advances (Internet), 6(42), p.35305 - 35314, 2016/04
Times Cited Count：19 Percentile：51.84(Chemistry, Multidisciplinary)Deng, Z.*; Zhao, K.*; Gu, B.; Han, W.*; Zhu, J. L.*; Wang, X. C.*; Li, X.*; Liu, Q. Q.*; Yu, R. C.*; Goko, Tatsuo*; et al.
Physical Review B, 88(8), p.081203_1 - 081203_5, 2013/08
Times Cited Count：76 Percentile：91.52(Materials Science, Multidisciplinary)Deng, Z.*; Jin, C. Q.*; Liu, Q. Q.*; Wang, X. C.*; Zhu, J. L.*; Feng, S. M.*; Chen, L. C.*; Yu, R. C.*; Arguello, C.*; Goko, Tatsuo*; et al.
Nature Communications (Internet), 2, p.1425_1 - 1425_5, 2011/08
Times Cited Count：169 Percentile：93.60(Multidisciplinary Sciences)In a prototypical ferromagnet (Ga,Mn)As based on a III-V semiconductor, substitution of divalent Mn atoms into trivalent Ga sites leads to severely limited chemical solubility and metastable specimens available only as thin films. The doping of hole carriers via (Ga,Mn) substitution also prohibits electron doping. To overcome these difficulties, Masek et al. theoretically proposed systems based on a I-II-V semiconductor LiZnAs, where isovalent (Zn,Mn) substitution is decoupled from carrier doping with excess/deficient Li concentrations. Here we show successful synthesis of Li
(Zn
Mn
)As in bulk materials. We reported that ferromagnetism with a critical temperature of up to 50 K is observed in nominally Li-excess compounds, which have p-type carriers.
Li, S.; Yamaguchi, Yoshihito; Katsuyama, Jinya; Sun, W.*; Deng, D.*; Li, Y.
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