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Journal Articles

Annealing of electron irradiated, thick, ultrapure 4H SiC between 1100$$^{circ}$$C and 1500$$^{circ}$$C and measurements of lifetime and photoluminescence

Klahold, W. M.*; Devaty, R. P.*; Choyke, W. J.*; Kawahara, Kotaro*; Kimoto, Tsunenobu*; Oshima, Takeshi

Materials Science Forum, 778-780, p.273 - 276, 2014/02

Journal Articles

Local thermal expansion and the C-C stretch vibration of the dicarbon antisite in 4H SiC

Devaty, R. P.*; Yan, F.*; Choyke, W. J.*; Gali, A.*; Kimoto, Tsunenobu*; Oshima, Takeshi

Materials Science Forum, 717-720, p.263 - 266, 2012/05

 Times Cited Count:1 Percentile:60.76

Journal Articles

Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC

Yan, F.*; Devaty, R. P.*; Choyke, W. J.*; Gali, A.*; Kimoto, Tsunenobu*; Oshima, Takeshi; Pensl, G.*

Applied Physics Letters, 100(13), p.132107_1 - 132107_3, 2012/03

 Times Cited Count:2 Percentile:10.01(Physics, Applied)

Journal Articles

Thermal stability of defects centers in n- and p-type 4H-SiC epilayers generated by irradiation with high-energy electrons

Reshanov, S. A.*; Beljakowa, S.*; Zippelius, B.*; Pensl, G.*; Danno, K.*; Alfieri, G.*; Kimoto, Tsunenobu*; Onoda, Shinobu; Oshima, Takeshi; Yan, F.*; et al.

Materials Science Forum, 645-648, p.423 - 426, 2010/00

n- and p-type 4H-SiC epilayers were irradiated with electrons at 170 keV or 1 MeV. Subsequent annealing (in Ar, 30 min) up to 1700 $$^{circ}$$C was carried out. Defects in the samples were investigated using DLTS (Deep Level Transient Spectroscopy). As a results, for n-type, dominant defects were Z1/Z2 and EH7, and they can observed for both 170 keV- and 1 MeV-irradiated samples. Both defects decreased with increasing temperature up to 1100 $$^{circ}$$C, although they appeared again at 1400 $$^{circ}$$C. Then they disappeared at 1600 $$^{circ}$$C. For p-type, defects named UK1 and HK2 were observed and they were very stable. No significant decrease was observed after 1700 $$^{circ}$$C annealing.

Journal Articles

Thermal histories of defect centers as measured by low temperature photoluminescence in n- and p-type 4H SiC epilayers generated by irradiation with 170 KeV or 1 MeV electrons

Yan, F.*; Devaty, R. P.*; Choyke, W. J.*; Danno, Katsunori*; Alfieri, G.*; Kimoto, Tsunenobu*; Onoda, Shinobu; Oshima, Takeshi; Reshanov, S. A.*; Beljakowa, S.*; et al.

Materials Science Forum, 645-648, p.419 - 422, 2010/00

Defects in n- and p-type 4H-SiC epitaxial layer were investigated by low temperature photoluminescence spectroscopy (LTPL) and deep level transient spectroscopy (DLTS). Defects were introduced by either 170 keV or 1 MeV electron irradiation into samples at RT. The samples were annealed from 25$$^{circ}$$C to 1700$$^{circ}$$C in 100$$^{circ}$$C steps. As a result of LTPL measurements, L$$_{1}$$ line was observed after irradiation. In previous studies, L$$_{1}$$ line is thought to correlate with Z$$_{1}$$/Z$$_{2}$$ centers in DLTS measurements. However, in this study, no correlation between L$$_{1}$$ and Z$$_{1}$$1/Z$$_{2}$$ was observed.

Journal Articles

New lines and issues associated with deep defect spectra in electron, proton and $$^{4}$$He ion irradiated 4H SiC

Yan, F.*; Devaty, R. P.*; Choyke, W. J.*; Kimoto, Tsunenobu*; Oshima, Takeshi; Pensl, G.*; Gali, A.*

Materials Science Forum, 645-648, p.411 - 414, 2010/00

Silicon Carbide (SiC) samples were irradiated with electron, proton and $$^{4}$$He ions and defects in the irradiated SiC were investigated by Low Temperature Photo Luminescence (LTPL). After irradiation, PL spectra between 2.48 and 2.62 eV were measured at 7 K. As a results, several PL lines were observed. These lines showed the same annealing behavior and were annealed out between 1300 and 1400$$^{circ}$$C. Therefore, it is concluded that these line have the same origin. In addition, as a result of simulation, the structure of the defect is determined to be di-carbon antisite.

Journal Articles

Shallow defects observed in as-grown and electron-irradiated or He$$^{+}$$-implnated Al-doped 4H-SiC epilayers

Beljakowa, S.*; Reshanov, S. A.*; Zippelius, B.*; Krieger, M.*; Pensl, G.*; Danno, Katsunori*; Kimoto, Tsunenobu*; Onoda, Shinobu; Oshima, Takeshi; Yan, F.*; et al.

Materials Science Forum, 645-648, p.427 - 430, 2010/00

Defects in Al-doped p-type 4H-SiC were investigated using admittance spectroscopy (AS). Also, defects in 4H-SiC irradiated with electrons and He ions were studied using AS. As a result, a shallow level with activation energy at 170 meV was found and is has the capture cross section of 3.5$$times$$10$$^{-16}$$/cm$$^{2}$$ which is extremely low value. The concentration of the defect did not change even after electron and He irradiations. Also, the defect can be found after annealing at 1800 $$^{circ}$$C. Therefore, we can conclude that the defect is a very stable intrinsic defect in SiC.

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