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Journal Articles

ITER test blanket module error field simulation experiments at DIII-D

Schaffer, M. J.*; Snipes, J. A.*; Gohil, P.*; de Vries, P.*; Evans, T. E.*; Fenstermacher, M. E.*; Gao, X.*; Garofalo, A. M.*; Gates, D. A.*; Greenfield, C. M.*; et al.

Nuclear Fusion, 51(10), p.103028_1 - 103028_11, 2011/10

https://doi.org/10.1088/0029-5515/51/10/103028
 Times Cited Count：35 Percentile：80.59(Physics, Fluids & Plasmas)

Experiments at DIII-D investigated the effects of ferromagnetic error fields similar to those expected from proposed ITER Test Blanket Modules (TBMs). Studied were effects on: plasma rotation and locking; confinement; L-H transition; edge localized mode (ELM) suppression by resonant magnetic perturbations; ELMs and the H-mode pedestal; energetic particle losses; and more. The experiments used a 3-coil mock-up of 2 magnetized ITER TBMs in one ITER equatorial port. The experiments did not reveal any effect likely to preclude ITER operations with a TBM-like error field. The largest effect was slowed plasma toroidal rotation v across the entire radial profile by as much as $$Delta v/v_{0} sim 50%$$ via non-resonant braking. Changes to global $$Delta n/n_{0}$$, $$Delta v/v_{0}$$ and $$Delta H_{98}/H_{98,0}$$ were $$sim$$3 times smaller. These effects are stronger at higher $$beta$$ and lower $$v_{0}$$. Other effects were smaller.

Journal Articles

Change in ion beam induced current from Si metal-oxide-semiconductor capacitors after $$gamma$$-ray irradiation

Oshima, Takeshi; Onoda, Shinobu; Hirao, Toshio; Takahashi, Yoshihiro*; Vizkelethy, G.*; Doyle, B. L.*

AIP Conference Proceedings 1099, p.1014 - 1017, 2009/03

https://doi.org/10.1063/1.3119985

Metal-Oxide-Semiconductor (MOS) capacitors were made on both n- and p-type Si substrates (n-MOS, and p-MOS). These MOS capacitors were irradiated with $$gamma$$-rays at a dose of 6.3 kGy (SiO$$_{2}$$) at room temperature. The capacitance-voltage characteristics for MOS capacitors were measured before and after irradiation. The flat band shift for n-MOS and p-MOS capacitors due to $$gamma$$-ray irradiation was -12.3 V and -15.2 V, respectively. As for the generation of interface traps, the values for n-MOS and p-MOS capacitors were estimated to be 0.5$$times$$10$$^{11}$$ and 1.7$$times$$10$$^{11}$$/cm$$^{2}$$, respectively. Transient Ion Beam Induced Current (TIBIC) obtained from these MOS capacitors were compared before and after $$gamma$$-ray irradiation. For n-MOS capacitors, the peak height of TIBIC signals decreased after $$gamma$$-ray irradiation. On the other hand, the peak height of TIBIC signals for p-MOS capacitors increased after $$gamma$$-ray irradiation. The applied bias dependence of the peak height of TIBIC signals for MOS capacitors irradiated with $$gamma$$-rays can be matched to that for ones before $$gamma$$-rays irradiation by shifting the voltage by -13 V for n-MOS capacitors and by -15 V for p-MOS capacitors. These voltage values are in good agreement with the flat band voltage shifts due to $$gamma$$-ray irradiation. Since flat band shift occurs due to the generation of positive charge trapped in gate oxide, the change in TIBIC signals observed for MOS capacitors due to $$gamma$$-ray irradiation can be interpreted in terms of positive charge generated in oxide.

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