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Journal Articles

The $$^{59}$$Fe(n,$$gamma$$)$$^{60}$$Fe cross section from the surrogate ratio method and its effect on the $$^{60}$$Fe nucleosynthesis

Yan, S. Q.*; Li, X. Y.*; Nishio, Katsuhisa; Lugaro, M.*; Li, Z. H.*; Makii, Hiroyuki; Pignatari, M.*; Wang, Y. B.*; Orlandi, R.; Hirose, Kentaro; et al.

Astrophysical Journal, 919(2), p.84_1 - 84_7, 2021/10

 Times Cited Count:1 Percentile:24.3(Astronomy & Astrophysics)

Journal Articles

Chapter 18, Moving particle semi-implicit method

Wang, Z.; Duan, G.*; Koshizuka, Seiichi*; Yamaji, Akifumi*

Nuclear Power Plant Design and Analysis Codes, p.439 - 461, 2021/00

Journal Articles

Consistent robin boundary enforcement of particle method for heat transfer problem with arbitrary geometry

Wang, Z.; Duan, G.*; Matsunaga, Takuya*; Sugiyama, Tomoyuki

International Journal of Heat and Mass Transfer, 157, p.119919_1 - 119919_20, 2020/08

 Times Cited Count:6 Percentile:64.1(Thermodynamics)

Journal Articles

Novel thienyl-dibenzothiophene oligomers end-capped by hexylphenyl groups as potential organic semiconductor materials

Duan, Z.*; Yang, Z.*; Hoshino, Daiki*; Hirao, Toshio; Taguchi, Mitsumasa; Ouchi, Hirokuni*; Yanagi, Yuichiro*; Nishioka, Yasushiro*

Molecular Crystals and Liquid Crystals, 567(1), p.28 - 33, 2012/09

 Times Cited Count:3 Percentile:43.81(Chemistry, Multidisciplinary)

$$pi$$-Conjugated polymers and oligomers are of interest for applications to organic light emitting diodes, solar cells, and organic field effect transistors because of their unique photo-electronic properties. Thienyl-dibenzothiophene oligomers end-capped by hexylphenyl groups, 2,8-bis[5-(4-n-hexylphenyl)-2-thienyl]dibenzothiophene and 3,7-bis[5-(4-nhexylphenyl)-2-thienyl]dibenzothiophene, were synthesized by Stille cross-coupling reactions. The photo-physical and electrochemical properties of the synthesized oligomers were investigated by Ultraviolet-visible and photoluminescence spectroscopy, cyclic voltammogram, and thermal analyses, and showed appropriate energy band gaps and low HOMO energy levels. The synthesized oligomers are promising candidate materials for durable organic electronic devices.

Journal Articles

$$gamma$$-ray irradiated organic thin film transistors based on perfluoropentacene with polyimide gate insulator

Takayanagi, Yutaro*; Ouchi, Hirokuni*; Duan, Z.*; Okukawa, Takanori*; Yanagi, Yuichiro*; Yoshida, Akira*; Taguchi, Mitsumasa; Hirao, Toshio; Nishioka, Yasushiro*

Journal of Photopolymer Science and Technology, 25(4), p.493 - 496, 2012/08

 Times Cited Count:0 Percentile:0.01(Polymer Science)

Organic thin film fields effect transistors are expected to be used in spacecrafts/satellites because they can realize large-size, mechanical flexibility, light weight and low-cost devices. N-channel field effect transistors with a Si/polyimide(PI)/perfluoropentacene/Au structure were fabricated, and irradiated with $$gamma$$-ray from Co source. The changes of the drain current vs. source/drain voltage characteristics were measured after every 200 Gy in silicon Gy(Si) irradiations up to the total dose of 1200 Gy(Si). The drain current gradually increased up to the total dose of 1200 Gy(Si). The threshold voltage decreased up to 400 Gy(Si), and gradually recovered above 600 Gy(Si). The mobility was almost unchanged up to 1200 Gy(Si). Those behaviors were explained by accumulation of positive trapped charge within the gate insulator PI near the interface. Evidence for the accumulation of interface traps was hardly observed.

Journal Articles

$$^{60}$$Co$$gamma$$-ray irradiation effects on pentacene-based organic thin film transistors

Cai, L.*; Hirao, Toshio; Yano, Hiroaki*; Duan, Z.*; Takayanagi, Yutaro*; Ueki, Hideharu*; Oshima, Takeshi; Nishioka, Yasushiro*

Materials Science Forum, 687, p.576 - 579, 2011/06

 Times Cited Count:3 Percentile:84.19

no abstracts in English

Journal Articles

Electrical characteristics of $$^{60}$$Co $$gamma$$-ray irradiated pentacene-based organic thin film field effect transistors

Cai, L.*; Hirao, Toshio; Yano, Hiroaki*; Duan, Z.*; Takayanagi, Hideharu*; Ueki, Hideharu*; Oshima, Takeshi; Nishioka, Yasushiro*

Proceedings of 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-9), p.176 - 178, 2010/10

no abstracts in English

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