Yan, S. Q.*; Li, X. Y.*; Nishio, Katsuhisa; Lugaro, M.*; Li, Z. H.*; Makii, Hiroyuki; Pignatari, M.*; Wang, Y. B.*; Orlandi, R.; Hirose, Kentaro; et al.
Astrophysical Journal, 919(2), p.84_1 - 84_7, 2021/10
Wang, Z.; Duan, G.*; Koshizuka, Seiichi*; Yamaji, Akifumi*
Nuclear Power Plant Design and Analysis Codes, p.439 - 461, 2021/00
Wang, Z.; Duan, G.*; Matsunaga, Takuya*; Sugiyama, Tomoyuki
International Journal of Heat and Mass Transfer, 157, p.119919_1 - 119919_20, 2020/08
Duan, Z.*; Yang, Z.*; Hoshino, Daiki*; Hirao, Toshio; Taguchi, Mitsumasa; Ouchi, Hirokuni*; Yanagi, Yuichiro*; Nishioka, Yasushiro*
Molecular Crystals and Liquid Crystals, 567(1), p.28 - 33, 2012/09
-Conjugated polymers and oligomers are of interest for applications to organic light emitting diodes, solar cells, and organic field effect transistors because of their unique photo-electronic properties. Thienyl-dibenzothiophene oligomers end-capped by hexylphenyl groups, 2,8-bis[5-(4-n-hexylphenyl)-2-thienyl]dibenzothiophene and 3,7-bis[5-(4-nhexylphenyl)-2-thienyl]dibenzothiophene, were synthesized by Stille cross-coupling reactions. The photo-physical and electrochemical properties of the synthesized oligomers were investigated by Ultraviolet-visible and photoluminescence spectroscopy, cyclic voltammogram, and thermal analyses, and showed appropriate energy band gaps and low HOMO energy levels. The synthesized oligomers are promising candidate materials for durable organic electronic devices.
Takayanagi, Yutaro*; Ouchi, Hirokuni*; Duan, Z.*; Okukawa, Takanori*; Yanagi, Yuichiro*; Yoshida, Akira*; Taguchi, Mitsumasa; Hirao, Toshio; Nishioka, Yasushiro*
Journal of Photopolymer Science and Technology, 25(4), p.493 - 496, 2012/08
Organic thin film fields effect transistors are expected to be used in spacecrafts/satellites because they can realize large-size, mechanical flexibility, light weight and low-cost devices. N-channel field effect transistors with a Si/polyimide(PI)/perfluoropentacene/Au structure were fabricated, and irradiated with -ray from Co source. The changes of the drain current vs. source/drain voltage characteristics were measured after every 200 Gy in silicon Gy(Si) irradiations up to the total dose of 1200 Gy(Si). The drain current gradually increased up to the total dose of 1200 Gy(Si). The threshold voltage decreased up to 400 Gy(Si), and gradually recovered above 600 Gy(Si). The mobility was almost unchanged up to 1200 Gy(Si). Those behaviors were explained by accumulation of positive trapped charge within the gate insulator PI near the interface. Evidence for the accumulation of interface traps was hardly observed.
Cai, L.*; Hirao, Toshio; Yano, Hiroaki*; Duan, Z.*; Takayanagi, Yutaro*; Ueki, Hideharu*; Oshima, Takeshi; Nishioka, Yasushiro*
Materials Science Forum, 687, p.576 - 579, 2011/06
no abstracts in English
Cai, L.*; Hirao, Toshio; Yano, Hiroaki*; Duan, Z.*; Takayanagi, Hideharu*; Ueki, Hideharu*; Oshima, Takeshi; Nishioka, Yasushiro*
Proceedings of 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-9), p.176 - 178, 2010/10
no abstracts in English