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論文

Observation of domain structure in non-collinear antiferromagnetic Mn$$_3$$Sn thin films by magneto-optical Kerr effect

内村 友宏*; Yoon, J.-Y.*; 佐藤 佑磨*; 竹内 祐太郎*; 金井 駿*; 武智 涼太*; 岸 桂輔*; 山根 結太*; DuttaGupta, S.*; 家田 淳一; et al.

Applied Physics Letters, 120(17), p.172405_1 - 172405_5, 2022/04

https://doi.org/10.1063/5.0089355
 被引用回数：18 パーセンタイル：88.76(Physics, Applied)

We perform a hysteresis-loop measurement and domain imaging for $$(1100)$$-oriented $$D0_{19}$$-Mn$$_{3+x}$$Sn$$_{1-x}$$ $$(-0.11 le x le 0.14)$$ thin films using magneto-optical Kerr effect (MOKE) and compare it with the anomalous Hall effect (AHE) measurement. We obtain a large Kerr rotation angle of 10 mdeg., comparable with bulk single-crystal Mn$$_3$$Sn. The composition $$x$$ dependence of AHE and MOKE shows a similar trend, suggesting the same origin, i.e., the non-vanishing Berry curvature in the momentum space. Magnetic domain observation at the saturated state shows that x dependence of AHE and MOKE is explained by an amount of reversible area that crucially depends on the crystalline structure of the film. Furthermore, in-depth observation of the reversal process reveals that the reversal starts with nucleation of sub-micrometer-scale domains dispersed in the film, followed by a domain expansion, where the domain wall preferentially propagates along the $$[11bar{2}0]$$ direction. Our study provides a basic understanding of the spatial evolution of the reversal of chiral-spin structure in non-collinear antiferromagnetic thin films.

論文

Correlation of anomalous Hall effect with structural parameters and magnetic ordering in Mn$$_{3+x}$$Sn$$_{1-x}$$ thin films

Yoon, J.-Y.*; 竹内 祐太郎*; DuttaGupta, S.*; 山根 結太*; 金井 駿*; 家田 淳一; 大野 英男*; 深見 俊輔*

AIP Advances (Internet), 11(6), p.065318_1 - 065318_6, 2021/06

https://doi.org/10.1063/5.0043192
 被引用回数：18 パーセンタイル：78.47(Nanoscience & Nanotechnology)

We investigate the relationship between structural parameters, magnetic ordering, and the anomalous Hall effect (AHE) of Mn$$_{3+x}$$Sn$$_{1-x}$$ ($$-0.42 le x le +0.23$$) thin films annealed at various temperature $$T_a$$. The crystal structure changes with $$x$$ and $$T_a$$ and at $$T_a ge 500$$ $$^circ$$C near the stoichiometric composition ($$-0.08 le x le +0.04$$) epitaxial single-phase $$D$$0$$_{19}$$-Mn$$_{3+x}$$Sn$$_{1-x}$$($$10bar{1}0$$) is obtained. At room temperature, a larger AHE is obtained when the single-phase epitaxial Mn$$_3$$Sn with the lattice constant closer to that of bulk is formed. The temperature dependence of the AHE shows different behaviors depending on $$T_a$$ and can be explained by considering the variation of magnetic ordering. A close inspection into the temperature and composition dependence suggests a variation of magnetic phase transition temperature with composition and/or a possible correlation between the AHE and Fermi level position with respect to the Weyl points. Our comprehensive study would provide the basis for utilizing the unique functionalities of non-collinear antiferromagnetic materials.

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