Epitaxy of graphene on 3C-SiC(111) thin films on microfabricated Si(111) substrates

Ide, Takayuki*; Kawai, Yusuke*; Handa, Hiroyuki*; Fukidome, Hirokazu*; Kotsugi, Masato*; Okochi, Takuo*; Enta, Yoshiharu*; Kinoshita, Toyohiko*; Yoshigoe, Akitaka; Teraoka, Yuden; et al.

Japanese Journal of Applied Physics, 51(6), p.06FD02_1 - 06FD02_4, 2012/06

https://doi.org/10.1143/JJAP.51.06FD02

Control of epitaxy of graphene by crystallographic orientation of a Si substrate toward device applications

Fukidome, Hirokazu*; Takahashi, Ryota*; Abe, Shunsuke*; Imaizumi, Kei*; Handa, Hiroyuki*; Kang, H. C.*; Karasawa, Hiromi*; Suemitsu, Tetsuya*; Otsuji, Taiichi*; Enta, Yoshiharu*; et al.

Journal of Materials Chemistry, 21(43), p.17242 - 17248, 2011/11

https://doi.org/10.1039/c1jm12921j

Initial oxidation of Si(110) as studied by real-time synchrotron-radiation X-ray photomission spectroscopy

Suemitsu, Maki*; Yamamoto, Yoshihisa*; Togashi, Hideaki*; Enta, Yoshiharu*; Yoshigoe, Akitaka; Teraoka, Yuden

Journal of Vacuum Science and Technology B, 27(1), p.547 - 550, 2009/02

https://doi.org/10.1116/1.3021032

Initial oxidation processes of the Si(110) surface and the chemical bonding states of silicon atoms in the initial oxides have been investigated by using real-time synchrotron-radiation photoemission spectroscopy. Time evolutions of the Si (=1-4) components in the Si 2 spectrum indicates that the Si component always overwhelms the Si component during the oxidation up to one monolayer. This is in sharp contrast to the Si(001) surface where Si is always larger than Si. The dominance of the Si component is related to presence of two types of bonds on the Si(110) surface and to their possible different reactivity against insertion of oxygen atoms.

Real-time observation of initial thermal oxidation on Si(110)-162 surfaces by O 1s photoemission spectroscopy using synchrotron radiation

Suemitsu, Maki*; Kato, Atsushi*; Togashi, Hideaki*; Konno, Atsushi*; Yamamoto, Yoshihisa*; Teraoka, Yuden; Yoshigoe, Akitaka; Narita, Yuzuru*; Enta, Yoshiharu*

Japanese Journal of Applied Physics, Part 1, 46(4B), p.1888 - 1890, 2007/04

https://doi.org/10.1143/JJAP.46.1888

Initial oxidation of Si(110) surface has been investigated by using real-time X-ray photoemission spectroscopy. The time evolution of the O 1s spectrum shows occurrence of rapid oxidation just after the introduction of the oxygen molecules, which is evidenced by the considerable peak intensity corresponding to oxygen exposure of as low as 1.5L (1L=1.3310 Pa s). This initial oxide is dominated by a state with a relatively low binding energy, which is gradually replaced by a state with a relatively high binding energy with the increase of the oxygen exposure, resulting in the low-KE shift of the O 1s peak. Comparison with previously reported O 1s spectra from dry-oxidized Si(111) surface suggests oxidation at or around the adatoms of Si(110)-162 clean surface as a likely oxidation state for this low-binding-energy peak.

Real-time measurements of chemical bonding states and substrate curvature during initial oxidation of Si(110) surface

Yamamoto, Yoshihisa*; Suzuki, Yasushi*; Miyamoto, Yu*; Bantaculo, R.*; Suemitsu, Maki*; Enta, Yoshiharu*; Teraoka, Yuden; Yoshigoe, Akitaka; Asaoka, Hidehito; Yamazaki, Tatsuya

no journal, , 

Time evolution of chemical bonding states and substrate curvature were measured by SR-PES (Synchrotron Radiation Photoemission Spectroscopy) and MOS (Multi-beam Optical Sensor) methods during initial oxidation of Si(110) surface. The SR-PES measurements were performed at the surface chemistry experimental station in the BL23SU of SPring-8. Oxygen uptake was a Langmuir type so that oxygen adsorption took place randomly in the conditions of 1.510 Pa and 873 K. In that case, Although Si and Si increased rapidly in the beginning of oxidation, Si was a minor component. This fact suggests that oxidation rate of inter-plane Si-Si bonds (B-bonds), which make a chain in the (-110) direction, is larger than that of in-plane Si-Si bonds (A-bonds) so that Si is observed strongly. The variation of substrate curvature also indicates that oxidation of B-bonds is faster than that of A-bonds, which makes a strong compression stress in the (-110) direction.