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Journal Articles

Epitaxy of graphene on 3C-SiC(111) thin films on microfabricated Si(111) substrates

Ide, Takayuki*; Kawai, Yusuke*; Handa, Hiroyuki*; Fukidome, Hirokazu*; Kotsugi, Masato*; Okochi, Takuo*; Enta, Yoshiharu*; Kinoshita, Toyohiko*; Yoshigoe, Akitaka; Teraoka, Yuden; et al.

Japanese Journal of Applied Physics, 51(6), p.06FD02_1 - 06FD02_4, 2012/06

 Times Cited Count:7 Percentile:33.93(Physics, Applied)

Journal Articles

Controls over structural and electronic properties of epitaxial graphene on silicon using surface termination of 3C-SiC(111)/Si

Fukidome, Hirokazu*; Abe, Shunsuke*; Takahashi, Ryota*; Imaizumi, Kei*; Inomata, Shuya*; Handa, Hiroyuki*; Saito, Eiji*; Enta, Yoshiharu*; Yoshigoe, Akitaka; Teraoka, Yuden; et al.

Applied Physics Express, 4(11), p.115104_1 - 115104_3, 2011/11

 Times Cited Count:34 Percentile:80.78(Physics, Applied)

Journal Articles

Control of epitaxy of graphene by crystallographic orientation of a Si substrate toward device applications

Fukidome, Hirokazu*; Takahashi, Ryota*; Abe, Shunsuke*; Imaizumi, Kei*; Handa, Hiroyuki*; Kang, H. C.*; Karasawa, Hiromi*; Suemitsu, Tetsuya*; Otsuji, Taiichi*; Enta, Yoshiharu*; et al.

Journal of Materials Chemistry, 21(43), p.17242 - 17248, 2011/11

 Times Cited Count:28 Percentile:67.71(Chemistry, Physical)

Journal Articles

Oxygen-induced reduction of the graphitization temperature of SiC surface

Imaizumi, Kei*; Handa, Hiroyuki*; Takahashi, Ryota*; Saito, Eiji*; Fukidome, Hirokazu*; Enta, Yoshiharu*; Teraoka, Yuden; Yoshigoe, Akitaka; Suemitsu, Maki*

Japanese Journal of Applied Physics, 50(7), p.070105_1 - 070105_6, 2011/07

 Times Cited Count:4 Percentile:20.9(Physics, Applied)

Journal Articles

Initial oxidation of Si(110) as studied by real-time synchrotron-radiation X-ray photomission spectroscopy

Suemitsu, Maki*; Yamamoto, Yoshihisa*; Togashi, Hideaki*; Enta, Yoshiharu*; Yoshigoe, Akitaka; Teraoka, Yuden

Journal of Vacuum Science and Technology B, 27(1), p.547 - 550, 2009/02

 Times Cited Count:4 Percentile:31.09(Engineering, Electrical & Electronic)

Initial oxidation processes of the Si(110) surface and the chemical bonding states of silicon atoms in the initial oxides have been investigated by using real-time synchrotron-radiation photoemission spectroscopy. Time evolutions of the Si$$^{n+}$$ ($$n$$=1-4) components in the Si 2$$p$$ spectrum indicates that the Si$$^{3+}$$ component always overwhelms the Si$$^{4+}$$ component during the oxidation up to one monolayer. This is in sharp contrast to the Si(001) surface where Si$$^{4+}$$ is always larger than Si$$^{3+}$$. The dominance of the Si$$^{3+}$$ component is related to presence of two types of bonds on the Si(110) surface and to their possible different reactivity against insertion of oxygen atoms.

Journal Articles

Initial oxidation of Si(110) surface evaluated by photoemission spectroscopy and substrate-curvature measurements

Yamamoto, Yoshihisa*; Suzuki, Yasushi*; Miyamoto, Yu*; Bantaculo, R.*; Suemitsu, Maki*; Enta, Yoshiharu*; Teraoka, Yuden; Yoshigoe, Akitaka; Asaoka, Hidehito; Yamazaki, Tatsuya

Hakumaku, Hyomen Butsuri Bunkakai, Shirikon Tekunoroji Bunkakai Kyosai Tokubetsu Kenkyukai Kenkyu Hokoku, p.207 - 210, 2009/01

The bending of Si substrate has been measured optically in the oxidation of Si(110) surface and variation of curvature for (001) and (-110) directions have been evaluated. Furthermore, time evolutions of oxygen adsorption content and its chemical bonding states have been measured by photoemission spectroscopy to discuss inisotropy of the Si(110) oxidation in comjunction with substrate curvature measurements. Oxygen adsorption content was evaluated from O1s photoemission and chemical bonding states were evaluated from Si2p photoemission. O$$_{2}$$ gas pressure was ranging from 5.0$$times$$10$$^{-6}$$ Pa to 6.7$$times$$10$$^{-6}$$ and substrate temperature was 873 K. Compressive stress was detected in the (-110) direction. In turn, stretching stress was detected. The photoemission spectroscopy indicated that a layer-by-layer oxidation was not took place. The stretching stress in the (001) direction implies that oxidation of B-bonds which have components along the (001) direction takes place.

Journal Articles

Real-time observation of initial thermal oxidation on Si(110)-16$$times$$2 surfaces by O 1s photoemission spectroscopy using synchrotron radiation

Suemitsu, Maki*; Kato, Atsushi*; Togashi, Hideaki*; Konno, Atsushi*; Yamamoto, Yoshihisa*; Teraoka, Yuden; Yoshigoe, Akitaka; Narita, Yuzuru*; Enta, Yoshiharu*

Japanese Journal of Applied Physics, Part 1, 46(4B), p.1888 - 1890, 2007/04

 Times Cited Count:12 Percentile:46.58(Physics, Applied)

Initial oxidation of Si(110) surface has been investigated by using real-time X-ray photoemission spectroscopy. The time evolution of the O 1s spectrum shows occurrence of rapid oxidation just after the introduction of the oxygen molecules, which is evidenced by the considerable peak intensity corresponding to oxygen exposure of as low as 1.5L (1L=1.33$$times$$10$$^{-4}$$ Pa s). This initial oxide is dominated by a state with a relatively low binding energy, which is gradually replaced by a state with a relatively high binding energy with the increase of the oxygen exposure, resulting in the low-KE shift of the O 1s peak. Comparison with previously reported O 1s spectra from dry-oxidized Si(111) surface suggests oxidation at or around the adatoms of Si(110)-16$$times$$2 clean surface as a likely oxidation state for this low-binding-energy peak.

Journal Articles

Real-time observation of initial thermal oxidation on Si(110)-16$$times$$2 surface by photoemission spectroscopy

Suemitsu, Maki*; Kato, Atsushi*; Togashi, Hideaki*; Konno, Atsushi*; Yamamoto, Yoshihisa*; Teraoka, Yuden; Yoshigoe, Akitaka; Enta, Yoshiharu*; Narita, Yuzuru*

ECS Transactions, 3(2), p.311 - 316, 2006/00

Initial thermal oxidation of Si(110) surface has been investigated by using real-time X-ray photoemission spectroscopy with synchrotron radiation. The Si(110) initial oxidation is characterized by presence of a rapid oxidation just after the introduction of gaseous oxygen molecules. Peak separation of the O1s photoemission spectra suggests the presence of at least two distinct oxidation sites on the surface, which may reflect the complicated surface structure of the Si(110)-16$$times$$2 reconstruction.

Oral presentation

Real-time measurements of chemical bonding states and substrate curvature during initial oxidation of Si(110) surface

Yamamoto, Yoshihisa*; Suzuki, Yasushi*; Miyamoto, Yu*; Bantaculo, R.*; Suemitsu, Maki*; Enta, Yoshiharu*; Teraoka, Yuden; Yoshigoe, Akitaka; Asaoka, Hidehito; Yamazaki, Tatsuya

no journal, , 

Time evolution of chemical bonding states and substrate curvature were measured by SR-PES (Synchrotron Radiation Photoemission Spectroscopy) and MOS (Multi-beam Optical Sensor) methods during initial oxidation of Si(110) surface. The SR-PES measurements were performed at the surface chemistry experimental station in the BL23SU of SPring-8. Oxygen uptake was a Langmuir type so that oxygen adsorption took place randomly in the conditions of 1.5$$times$$10$$^{-6}$$ Pa and 873 K. In that case, Although Si$$^{3+}$$ and Si$$^{4+}$$ increased rapidly in the beginning of oxidation, Si$$^{2+}$$ was a minor component. This fact suggests that oxidation rate of inter-plane Si-Si bonds (B-bonds), which make a chain in the (-110) direction, is larger than that of in-plane Si-Si bonds (A-bonds) so that Si$$^{3+}$$ is observed strongly. The variation of substrate curvature also indicates that oxidation of B-bonds is faster than that of A-bonds, which makes a strong compression stress in the (-110) direction.

Oral presentation

Control of electronic and structural properties of epitaxial graphene on 3C-SiC/Si and its device applications

Fukidome, Hirokazu*; Kotsugi, Masato*; Okochi, Takuo*; Yoshigoe, Akitaka; Teraoka, Yuden; Enta, Yoshiharu*; Kinoshita, Toyohiko*; Suemitsu, Tetsuya*; Otsuji, Taiichi*; Suemitsu, Maki*

no journal, , 

10 (Records 1-10 displayed on this page)
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