Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
-Al
O
(0001) for use as an adsorbentEntani, Shiro*; Honda, Mitsunori; Takizawa, Masaru*; Koda, Makoto*
Beilstein Journal of Nanotechnology (Internet), 16, p.1082 - 1087, 2025/07
Times Cited Count：0Entani, Shiro*; Honda, Mitsunori; Mizuguchi, Masaki*; Watanabe, Hideo*; Oshima, Takeshi*; Koda, Makoto*
ACS Omega (Internet), 10(21), p.21537 - 21542, 2025/06
Times Cited Count：0Fukaya, Yuki; Entani, Shiro*; Sakai, Seiji*
Physical Review B, 108(15), p.155422_1 - 155422_6, 2023/10
Times Cited Count：2 Percentile：17.77(Materials Science, Multidisciplinary)no abstracts in English
Entani, Shiro*; Sato, Shinichiro*; Honda, Mitsunori; Suzuki, Chihiro*; Taguchi, Tomitsugu*; Yamamoto, Shunya*; Oshima, Takeshi*
Radiation Physics and Chemistry, 199, p.110369_1 - 110369_7, 2022/10
Times Cited Count：1 Percentile：11.24(Chemistry, Physical)Ni silicide synthesis by Ni ion beam irradiation into Si attracts attention due to its advantages including the ability of formation of local structures, the controllability of ion beams, the formability of silicide without heat treatment and the high reproducibility of the resulting specimen. In this work, we investigate the local atomic structure of Si implanted with 3.0 MeV Ni
ions. Analysis of Ni K-edge fluorescent-yield extended X-ray absorption fine structure reveals that Ni atoms have mixed structure of metallic-like face-centered cubic Ni and NiSi phases at the initial stage of the irradiation and the formation of NiSi promotes significantly with the ion fluence above 10 
ions cm
. With consideration of the agreement between the ion fluence threshold for the structural transition and the critical Si-amorphization fluence, it is concluded that the amorphization of Si plays an important role in the synthesis of the NiSi phase in Ni-irradiated Si.
-AlO(0001)Entani, Shiro*; Honda, Mitsunori; Naramoto, Hiroshi*; Li, S.*; Sakai, Seiji*
Surface Science, 704, p.121749_1 - 121749_6, 2021/02
Times Cited Count：7 Percentile：33.40(Chemistry, Physical)Graphene is expected to be one of the most promising materials for nanoelectronics and spintronics. In most graphene-based devices, the graphene channel is placed on insulating substrates. Therefore, the study of inter-facial interactions between graphene and the insulator surface is of critical importance. In this study, the vertical arrangement of graphene which is transferred on -AlO(0001) has been studied by normal incidence X-ray standing wave (NIXSW) technique. The analysis of the NIXSW profile reveals that the graphene layer is located at 3.57 (
) above the -AlO(0001) surface, which is larger than the interlayer distance of graphite at 3.356 (). Micro- Raman spectroscopy shows that the transferred graphene has a limited spatial distribution of hole concentration. The present study shows that transferred graphene on the sapphire substrate followed by vacuum-annealing has an atomically flat surface free from residual contaminations such as organic compounds and there occurs the hole-doping in graphene.
Entani, Shiro*; Honda, Mitsunori; Shimoyama, Iwao; Li, S.*; Naramoto, Hiroshi*; Yaita, Tsuyoshi; Sakai, Seiji*
Japanese Journal of Applied Physics, 57(4S), p.04FP04_1 - 04FP04_4, 2018/04
Times Cited Count：4 Percentile：16.07(Physics, Applied)Fukaya, Yuki; Entani, Shiro; Sakai, Seiji; Mochizuki, Izumi*; Wada, Ken*; Hyodo, Toshio*; Shamoto, Shinichi
Carbon, 103, p.1 - 4, 2016/07
Times Cited Count：31 Percentile：63.72(Chemistry, Physical)no abstracts in English
Haku, Satoshi*; Tashiro, Takaharu*; Nakayama, Hiroyasu*; Ieda, Junichi; Entani, Shiro; Sakai, Seiji; Ando, Kazuya*
Applied Physics Express, 8(7), p.073009_1 - 073009_3, 2015/07
Times Cited Count：4 Percentile：16.65(Physics, Applied)We found that the spin pumping in a Ni
Fe
/Pt bilayer is strongly suppressed by inserting single-layer graphene (SLG) at the interface. The spin pumping in the NiFe/Pt bilayer enhances the magnetization damping of the ferromagnetic layer, which is quantified from microwave frequency dependence of ferromagnetic resonance linewidth. We show that the enhancement of the magnetization damping due to the spin pumping disappears in a NiFe/SLG/Pt trilayer. This result indicates that the spin pumping is blocked by the atomic monolayer, demonstrating the crucial role of the interfacial short-range spin-exchange coupling in the spin pumping in metallic systems.
Entani, Shiro; Naramoto, Hiroshi*; Sakai, Seiji
Journal of Applied Physics, 117(17), p.17A334_1 - 17A334_4, 2015/05
Times Cited Count：21 Percentile：61.25(Physics, Applied)Entani, Shiro; Antipina, L. Y.*; Avramov, P.*; Otomo, Manabu*; Matsumoto, Yoshihiro*; Hirao, Norie; Shimoyama, Iwao; Naramoto, Hiroshi*; Baba, Yuji; Sorokin, P. B.*; et al.
Nano Research, 8(5), p.1535 - 1545, 2015/05
Times Cited Count：29 Percentile：70.92(Chemistry, Physical)Kuzubov, A. A.*; Kovaleva, E. A.*; Avramov, P. V.*; Kuklin, A. V.*; Mikhaleva, N. S.*; Tomilin, F. N.*; Sakai, Seiji; Entani, Shiro; Matsumoto, Yoshihiro*; Naramoto, Hiroshi*
Journal of Applied Physics, 116(8), p.084309_1 - 084309_4, 2014/08
Times Cited Count：10 Percentile：38.11(Physics, Applied)Avramov, P. V.*; Kuzubov, A. A.*; Sakai, Seiji; Otomo, Manabu*; Entani, Shiro; Matsumoto, Yoshihiro*; Eleseeva, N. S.*; Pomogaev, V. A.*; Naramoto, Hiroshi*
Journal of Porphyrins and Phthalocyanines, 18(7), p.552 - 568, 2014/07
Times Cited Count：1 Percentile：4.83(Chemistry, Multidisciplinary)Otomo, Manabu; Yamauchi, Yasushi*; Kuzubov, A. A.*; Eliseeva, N. S.*; Avramov, P.*; Entani, Shiro; Matsumoto, Yoshihiro; Naramoto, Hiroshi*; Sakai, Seiji
Applied Physics Letters, 104(5), p.051604_1 - 051604_4, 2014/02
Times Cited Count：12 Percentile：43.82(Physics, Applied)Hexagonal boron nitride (h-BN) is a promising barrier material for graphene spintronics. In this study, spin-polarized metastable de-excitation spectroscopy (SPMDS) is employed to study the spin-dependent electronic structure of monolayer h-BN on Ni(111). The extreme surface sensitivity of SPMDS enables us to elucidate a partial filling of the in-gap states of h-BN without any superposition of Ni 3
signals. The in-gap states are shown to have a considerable spin polarization parallel to the majority spin of Ni. The positive spin polarization is attributed to the 
- hybridization and the effective spin transfer to the nitrogen atoms at the h-BN/Ni(111) interface.
Entani, Shiro; Kurahashi, Mitsunori*; Sun, X.*; Yamauchi, Yasushi*
Carbon, 61, p.134 - 139, 2013/09
Times Cited Count：18 Percentile：45.89(Chemistry, Physical)Matsumoto, Yoshihiro; Entani, Shiro; Koide, Akihiro*; Otomo, Manabu; Avramov, P.; Naramoto, Hiroshi*; Amemiya, Kenta*; Fujikawa, Takashi*; Sakai, Seiji
Journal of Materials Chemistry C, 1(35), p.5533 - 5537, 2013/09
Times Cited Count：35 Percentile：76.75(Materials Science, Multidisciplinary)
interface in the Fe-doped C filmSakai, Seiji; Matsumoto, Yoshihiro; Otomo, Manabu; Entani, Shiro; Avramov, P.; Sorokin, P. B.*; Naramoto, Hiroshi*
Synthetic Metals, 173, p.22 - 25, 2013/06
Times Cited Count：3 Percentile：13.89(Materials Science, Multidisciplinary)
-BN/Ni nanocompositesAvramov, P.; Kuzubov, A. A.*; Sakai, Seiji; Otomo, Manabu; Entani, Shiro; Matsumoto, Yoshihiro; Naramoto, Hiroshi*; Eliseeva, N. S.*
Journal of Applied Physics, 112(11), p.114303_1 - 114303_10, 2012/12
Times Cited Count：18 Percentile：56.76(Physics, Applied)Avramov, P.; Fedorov, D. G.*; Sorokin, P. B.*; Sakai, Seiji; Entani, Shiro; Otomo, Manabu; Matsumoto, Yoshihiro; Naramoto, Hiroshi*
Journal of Physical Chemistry Letters (Internet), 3(15), p.2003 - 2008, 2012/08
Times Cited Count：39 Percentile：78.42(Chemistry, Physical)Antipina, L. Y.*; Avramov, P.; Sakai, Seiji; Naramoto, Hiroshi*; Otomo, Manabu; Entani, Shiro; Matsumoto, Yoshihiro; Sorokin, P. B.*
Physical Review B, 86(8), p.085435_1 - 085435_7, 2012/08
Times Cited Count：58 Percentile：87.16(Materials Science, Multidisciplinary)-Co films with current-perpendicular-to-plane geometrySakai, Seiji; Mitani, Seiji*; Matsumoto, Yoshihiro; Entani, Shiro; Avramov, P.; Otomo, Manabu; Naramoto, Hiroshi*; Takanashi, Koki
Journal of Magnetism and Magnetic Materials, 324(12), p.1970 - 1974, 2012/06
Times Cited Count：3 Percentile：13.55(Materials Science, Multidisciplinary)