Refine your search:     
Report No.
 - 
Search Results: Records 1-8 displayed on this page of 8
  • 1

Presentation/Publication Type

Initialising ...

Refine

Journal/Book Title

Initialising ...

Meeting title

Initialising ...

First Author

Initialising ...

Keyword

Initialising ...

Language

Initialising ...

Publication Year

Initialising ...

Held year of conference

Initialising ...

Save select records

Journal Articles

Effects of the surface condition of the substrates on the electrical characteristics of 4H-SiC MOSFETs

Oshima, Takeshi; Onoda, Shinobu; Kamada, Toru*; Hotta, Kazutoshi*; Kawata, Kenji*; Eryu, Osamu*

Materials Science Forum, 615-617, p.781 - 784, 2009/00

Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) were fabricated on p-type epitaxial 4H-SiC substrates with different surface conditions. These electrical characteristics were compared from a point of view of the surface condition. The MOSFETs on Chemical Mechanical Polished substrates showed the drain current of the order of 10$$^{-12}$$ A at a gate voltage of zero. The drain current increased with increasing the surface roughness of substrates. With decreasing the surface roughness of substrates, the values of the threshold voltage decreased and the quality of gate oxide became better.

Journal Articles

Annealing of vacancy-type defect and diffusion of implanted boron in 6H-SiC

Oshima, Takeshi; Uedono, Akira*; Eryu, Osamu*; Lee, K. K.; Abe, Koji*; Ito, Hisayoshi; Nakashima, Kenshiro*

Materials Science Forum, 433-436, p.633 - 636, 2003/08

no abstracts in English

Journal Articles

Positron annihilation study of vacancy-type defects in silicon carbide co-implanted with aluminum and carbon ions

Oshima, Takeshi; Uedono, Akira*; Abe, Hiroshi; Chen, Z. Q.*; Ito, Hisayoshi; Yoshikawa, Masahito; Abe, Koji*; Eryu, Osamu*; Nakashima, Kenshiro*

Physica B; Condensed Matter, 308-310, p.652 - 655, 2001/12

 Times Cited Count:6 Percentile:59.86

Co-implantation of Al(2E18/cm3) and C(1E18/cm3) into 6H-SiC and subsequent thermal annealing up to 1650 C werer carried out. Vacancy-type defects in the implanted layer were studied by monoenergetic positron beams. The mean size of vacancy-type defects in as-implanted samples is found to be close to the size of divacancy. Although vacancy clsters near a surface region were created by 1000 C-annealing, clustering is suppressed in a deep region.The mean size of vacancys decrease by annealing above 1000 C, and major vacancy defects annealed out after annealing at 1400 C. No significant difference in defect annealing between only Al- and co-implanted samles was observed.This result suggests that electrical activation of Al is enhanced by the site competition mechanism.

Oral presentation

Influence on the epitaxial film by different pre-processing

Hotta, Kazutoshi*; Kamada, Toru*; Kawata, Kenji*; Eryu, Osamu*; Oshima, Takeshi

no journal, , 

no abstracts in English

Oral presentation

Electrical characteristics of MOSFETs fabricated on 4H-SiC with different surface morphology

Oshima, Takeshi; Onoda, Shinobu; Hotta, Kazutoshi*; Kamada, Toru*; Kawata, Kenji*; Eryu, Osamu*

no journal, , 

no abstracts in English

Oral presentation

Distribution of the electrical characteristics of 4H-SiC MOSFETs fabricated on substrates with different surface morphologies

Oshima, Takeshi; Onoda, Shinobu; Hotta, Kazutoshi*; Kamada, Toru*; Kawata, Kenji*; Eryu, Osamu*

no journal, , 

no abstracts in English

Oral presentation

Effects of lapping methods on electrical properties of SiC SBD

Tanaka, Yayoi*; Hotta, Kazutoshi*; Kamada, Toru*; Kawata, Kenji*; Oshima, Takeshi; Eryu, Osamu*

no journal, , 

no abstracts in English

Oral presentation

Development of dual mechano chemical polishing for SiC substrate

Hotta, Kazutoshi*; Kamada, Toru*; Kawata, Kenji*; Eryu, Osamu*; Oshima, Takeshi

no journal, , 

no abstracts in English

8 (Records 1-8 displayed on this page)
  • 1