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Miyagawa, Reina*; Kamibayashi, Daisuke*; Nakamura, Hirotaka*; Hashida, Masaki*; Zen, H.*; Somekawa, Toshihiro*; Matsuoka, Takeshi*; Ogura, Hiroyuki*; Sagae, Daisuke*; Seto, Yusuke*; et al.
Scientific Reports (Internet), 12, p.20955_1 - 20955_8, 2022/12
Times Cited Count：0 Percentile：0(Multidisciplinary Sciences)We evaluated Laser-Induced Periodic Surface Structure (LIPSS) crystal structures using the stress imaging station at BL22XU of JAEA-BL on SPring-8. Crystallization of LIPPS was used different two types laser these are Ti:Sapphire laser (wavelength: 800 nm) and MIR-FEL (mid-infrared free electron laser, wavelength 11.4 
m). These lasers are different in the laser pulse structure and the wavelength. We investigated on the effects of formed LIPSS crystallization using different kind of laser. Measured synchrotron X-ray energy is 30 keV and beam size is 20 m. Detector of diffracted X-ray is two-dimensional detector (PILATUS300K, DECTRIS). LIPSS formed using Ti:Sapphire laser has deformed structure with good crystallinity. LIPSS formed using MIR-FEL has dislocation or fault without structural stress. These results show depending on select of laser forming LIPPS structure. These information becomes important a point of the functional application of LIPSS.
Oshima, Takeshi; Onoda, Shinobu; Kamada, Toru*; Hotta, Kazutoshi*; Kawata, Kenji*; Eryu, Osamu*
Materials Science Forum, 615-617, p.781 - 784, 2009/00
Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) were fabricated on p-type epitaxial 4H-SiC substrates with different surface conditions. These electrical characteristics were compared from a point of view of the surface condition. The MOSFETs on Chemical Mechanical Polished substrates showed the drain current of the order of 10
A at a gate voltage of zero. The drain current increased with increasing the surface roughness of substrates. With decreasing the surface roughness of substrates, the values of the threshold voltage decreased and the quality of gate oxide became better.
Oshima, Takeshi; Uedono, Akira*; Eryu, Osamu*; Lee, K. K.; Abe, Koji*; Ito, Hisayoshi; Nakashima, Kenshiro*
Materials Science Forum, 433-436, p.633 - 636, 2003/08
no abstracts in English
Oshima, Takeshi; Uedono, Akira*; Abe, Hiroshi; Chen, Z. Q.*; Ito, Hisayoshi; Yoshikawa, Masahito; Abe, Koji*; Eryu, Osamu*; Nakashima, Kenshiro*
Physica B; Condensed Matter, 308-310, p.652 - 655, 2001/12
Times Cited Count：6 Percentile：37.52(Physics, Condensed Matter)Co-implantation of Al(2E18/cm3) and C(1E18/cm3) into 6H-SiC and subsequent thermal annealing up to 1650 C werer carried out. Vacancy-type defects in the implanted layer were studied by monoenergetic positron beams. The mean size of vacancy-type defects in as-implanted samples is found to be close to the size of divacancy. Although vacancy clsters near a surface region were created by 1000 C-annealing, clustering is suppressed in a deep region.The mean size of vacancys decrease by annealing above 1000 C, and major vacancy defects annealed out after annealing at 1400 C. No significant difference in defect annealing between only Al- and co-implanted samles was observed.This result suggests that electrical activation of Al is enhanced by the site competition mechanism.
Hotta, Kazutoshi*; Kamada, Toru*; Kawata, Kenji*; Eryu, Osamu*; Oshima, Takeshi
no journal, ,
no abstracts in English
Oshima, Takeshi; Onoda, Shinobu; Hotta, Kazutoshi*; Kamada, Toru*; Kawata, Kenji*; Eryu, Osamu*
no journal, ,
no abstracts in English
Oshima, Takeshi; Onoda, Shinobu; Hotta, Kazutoshi*; Kamada, Toru*; Kawata, Kenji*; Eryu, Osamu*
no journal, ,
no abstracts in English
Tanaka, Yayoi*; Hotta, Kazutoshi*; Kamada, Toru*; Kawata, Kenji*; Oshima, Takeshi; Eryu, Osamu*
no journal, ,
no abstracts in English
Hotta, Kazutoshi*; Kamada, Toru*; Kawata, Kenji*; Eryu, Osamu*; Oshima, Takeshi
no journal, ,
no abstracts in English
