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Journal Articles

In-source laser spectroscopy of dysprosium isotopes at the ISOLDE-RILIS

Chrysalidis, K.*; Barzakh, A. E.*; Ahmed, R.*; Andreyev, A. N.; Ballof, J.*; Cubiss, J. G.*; Fedorov, D. V.*; Fedosseev, V. N.*; Fraile, L. M.*; Harding, R. D.*; et al.

Nuclear Instruments and Methods in Physics Research B, 463, p.472 - 475, 2020/01

 Times Cited Count:3 Percentile:37.81(Instruments & Instrumentation)

A number of radiogenically produced dysprosium isotopes have been studied by in-source laser spectroscopy at ISOLDE using the Resonance Ionization Laser Ion Source (RILIS). Isotope shifts were measured relative to $$^{152}$$Dy in the $$4f^{10}6s^{2}~^{5}I_{8}$$ (gs) $$rightarrow$$ $$4f^{10}6s6p~(8,1)^{0}_{8}$$ (418.8 nm $$_{rm VAC}$$)resonance transition. The electronic factor, $$F$$, and mass shift factor, M, were extracted and used for determining the changes in mean-squared charge radii for $$^{rm 145m}$$Dy and $$^{rm 147m}$$Dy for the first time.

Journal Articles

$$alpha$$-decay branching ratio of $$^{180}$$Pt

Cubiss, J. G.*; Harding, R. D.*; Andreyev, A. N.; Althubiti, N.*; Andel, B.*; Antalic, S.*; Barzakh, A. E.*; Cocolios, T. E.*; Day Goodacre, T.*; Farooq-Smith, G. J.*; et al.

Physical Review C, 101(1), p.014314_1 - 014314_4, 2020/01

 Times Cited Count:5 Percentile:54.24(Physics, Nuclear)

The $$alpha$$-decay branching ratio of 0.52(5)% from the ground state of $$^{180}$$Pt to the ground state of the daughter nucleus $$^{176}$$Os has been determined more precisely than before. The $$^{180}$$Pt was produced as the $$beta$$-decay granddaughter of $$^{180}$$Hg which was produced and separated with the CERN-ISOLDE facility. The reduced $$alpha$$-decay width calculated with the present result has provided a new picture of the systematics for the $$alpha$$-decay width of neutron-deficient Pt isotopes.

Journal Articles

A Review of separation processes proposed for advanced fuel cycles based on technology readiness level assessments

Baron, P.*; Cornet, S. M.*; Collins, E. D.*; DeAngelis, G.*; Del Cul, G.*; Fedorov, Y.*; Glatz, J. P.*; Ignatiev, V.*; Inoue, Tadashi*; Khaperskaya, A.*; et al.

Progress in Nuclear Energy, 117, p.103091_1 - 103091_24, 2019/11

 Times Cited Count:54 Percentile:93.84(Nuclear Science & Technology)

The results of an international review of separation processes for spent nuclear fuel (SNF) recycling in future closed fuel cycles with the evaluation of Technology Readiness Level are reported. This study was made by the Expert Group on Fuel Recycling Chemistry (EGFRC) organised by the Nuclear Energy Agency (NEA) of the Organisation for Economic Co-operation and Development (OECD). A unique feature of this study was that processes were classified according to a hierarchy of separations aimed at different elements within spent fuel (uranium; uranium-plutonium co-recovery; minor actinides; high heat generating radionuclides) and also the Head-end processes, used to prepare the SNF for chemical separation, were included. Separation processes covered both wet (hydrometallurgical) and dry (pyro-chemical) processes.

Journal Articles

Fine structure in the $$alpha$$ decay of $$^{218}$$At

Cubiss, J. G.*; Andreyev, A. N.; Barzakh, A. E.*; Andel, B.*; Antalic, S.*; Cocolios, T. E.*; Day Goodacre, T.*; Fedorov, D. V.*; Fedosseev, V. N.*; Ferrer, R.*; et al.

Physical Review C, 99(6), p.064317_1 - 064317_6, 2019/06

 Times Cited Count:6 Percentile:55.18(Physics, Nuclear)

An $$alpha$$ decay of $$^{218}$$At was studied at the CERN-ISOLDE facility using a laser-ionization technique. Coincidence $$alpha$$-$$gamma$$ data were collected for the first time and a more precise half-life value of T$$_{1/2}$$ = 1.27(6) s was measured. A new $$alpha$$-decay scheme was deduced based on the fine-structure of the $$alpha$$ decay. The results lead to a preferred spin and parity assignment of J$$_{pi}$$ = (3$$^{-}$$) for the ground state of $$^{218}$$At; however, J$$_{pi}$$ = (2)$$^{-}$$ cannot be fully excluded.

Journal Articles

Inverse odd-even staggering in nuclear charge radii and possible octupole collectivity in $$^{217,218,219}$$At revealed by in-source laser spectroscopy

Barzakh, A. E.*; Cubiss, J. G.*; Andreyev, A. N.; Seliverstov, M. D.*; Andel, B.*; Antalic, S.*; Ascher, P.*; Atanasov, D.*; Beck, D.*; Biero$'n$, J.*; et al.

Physical Review C, 99(5), p.054317_1 - 054317_9, 2019/05

 Times Cited Count:12 Percentile:78.18(Physics, Nuclear)

Journal Articles

Shapes of $$^{192,190}$$Pb ground states from $$beta$$-decay studies using the total-absorption technique

Est$'e$vez Aguado, M. E.*; Algora, A.*; Agramunt, J.*; Rubio, B.*; Tain, J. L.*; Jord$'a$n, D.*; Fraile, L. M.*; Gelletly, W.*; Frank, A.*; Csatl$'o$s, M.*; et al.

Physical Review C, 92(4), p.044321_1 - 044321_8, 2015/10

 Times Cited Count:15 Percentile:72.14(Physics, Nuclear)

Journal Articles

Intrinsic edge asymmetry in narrow zigzag hexagonal heteroatomic nanoribbons causes their subtle uniform curvature

Avramov, P.; Fedorov, D. G.*; Sorokin, P. B.*; Sakai, Seiji; Entani, Shiro; Otomo, Manabu; Matsumoto, Yoshihiro; Naramoto, Hiroshi*

Journal of Physical Chemistry Letters (Internet), 3(15), p.2003 - 2008, 2012/08

 Times Cited Count:34 Percentile:79.78(Chemistry, Physical)

Journal Articles

High-capacity electrode material BC$$_{3}$$ for lithium batteries proposed by ${it ab initio}$ simulations

Kuzubov, A. A.*; Fedorov, A. S.*; Eliseeva, N. S.*; Tomilin, F. N.*; Avramov, P.; Fedorov, D. G.*

Physical Review B, 85(19), p.195415_1 - 195415_4, 2012/05

 Times Cited Count:38 Percentile:80.89(Materials Science, Multidisciplinary)

Journal Articles

Atomic and electronic structure of new hollow-based symmetric families of silicon nanoclusters

Avramov, P.; Fedorov, D. G.*; Sorokin, P. B.*; Chernozatonskii, L. A.*; Gordon, M. S.*

Journal of Physical Chemistry C, 111(51), p.18824 - 18830, 2007/12

 Times Cited Count:12 Percentile:40.09(Chemistry, Physical)

We have systematically constructed a set of stable silicon nanocluster families with large arbitrary fullerenetype hollows inside. In addition, conglomerate structures are designed by connecting the nanoclusters through pentagonal and hexagonal junctions. The atomic and electronic structure of the proposed objects is investigated using the semiempirical quantum-mechanical method. It is shown that within each family the band gap and the stability are inversely proportional to the particle effective size. The clusters inherit a wide variety of structural and symmetry properties from their parent silicon fullerenes. The conglomerates confine electrons like quasi-molecules with a peculiar electronic structure related to the junctions. Quantum dots and their conglomerates can host guest atoms in their hollows and therefore present a new promising type of nanomaterials with tunable electronic properties.

Journal Articles

Band-gap unification of partially Si-substituted single-wall carbon nanotubes

Avramov, P.; Sorokin, P. B.*; Fedorov, A. S.*; Fedorov, D. G.*; Maeda, Yoshihito

Physical Review B, 74(24), p.245417_1 - 245417_8, 2006/12

 Times Cited Count:17 Percentile:60.04(Materials Science, Multidisciplinary)

The atomic and electronic structure of a set of pristine single wall SiC nanotubes as well as Si-substituted carbon nanotubes and a SiC sheet was studied by the LDA plane wave band structure calculations. Consecutive substitution of carbon atoms by Si leads to a gap opening in the energetic spectrum of the metallic (8,8) SWCNT with approximately quadratic dependence of the band gap upon the Si concentration. The same substitution for the semiconductor (10,0) SWCNT results in a band gap minimum (0.27 eV) at $$sim$$25% of Si concentration. In the Si concentration region of 12-18%, both types of nanotubes have less than 0.5 eV direct band gaps at the $$Gamma$$-$$Gamma$$ point. The calculation of the chiral (8,2) SWSi$$_{0.15}$$C$$_{0.85}$$NT system gives a similar (0.6 eV) direct band gap. The regular distribution of Si atoms in the atomic lattice is by $$sim$$0.1 eV/atom energetically preferable in comparison with a random distribution. Time dependent DFT calculations showed that the silicon substitution sufficiently increases (roughly by one order of magnitude) the total probability of optical transitions in the near infrared region, which is caused by the opening of the direct band gap in metallic SWCNTs, the unification of the nature and energy of band gaps of all SWCNT species, the large values of $$<$$Si3$$it{p}$$$$|{it r}|$$Si3$$it{s}$$$$>$$ radial integrals and participation of Si3$$it{d}$$ states in chemical bonding in both valence and conductance bands.

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