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Hasegawa, Mika*; Sugawara, Kenta*; Suto, Ryota*; Sambonsuge, Shota*; Teraoka, Yuden; Yoshigoe, Akitaka; Filimonov, S.*; Fukidome, Hirokazu*; Suemitsu, Maki*
Nanoscale Research Letters, 10, p.421_1 - 421_6, 2015/10
Times Cited Count：14 Percentile：52.35(Nanoscience & Nanotechnology)Graphene has attracted much attention as a promising material in electronics and photonics. The graphitization temperature of 1473 K or higher of graphene-on-silicon(GOS), however, is still too high to be fully compatible with the Si technology. Here, the first application of Ni-assisted formation of graphene to the GOS method was reported. We demonstrate that the graphene formation temperature can be reduced by more than 200 K by this method. Moreover, solid-phase reactions during heating/annealing/cooling procedures have been investigated in detail by using 
synchrotron-radiation X-ray photoelectron spectroscopy. As a result, we clarify the role of Ni/SiC reactions, in which not only Ni silicidation and but also Ni carbonization is suggested as a key process in the formation of graphene.
Asaoka, Hidehito; Yamazaki, Tatsuya*; Yamaguchi, Kenji; Shamoto, Shinichi; Filimonov, S.*; Suemitsu, Maki*
Surface Science, 609, p.157 - 160, 2013/03
Times Cited Count：1 Percentile：4.97(Chemistry, Physical)We have focused on stress measurements during Bi termination of Si(111) and Ge growth on this Bi-mediated Si(111). In order to obtain information on both the surface stress and the surface structure simultaneously, we have combined the surface-curvature and the reflection-high-electron-energy-diffraction instrumentations in an identical ultrahigh vacuum system. We find the Bi-terminated Si(111) 
-
surface releases 1.8 N/m (=J/m
), or (1.4 eV/(11 unit cell)), of the surface energy from the strong tensile Si(111) 77 reconstruction. Subsequent Ge deposition on the Bi-terminated Si surface develops a compressive stress, which oscillates with a period corresponding to the growth of a single bilayer. The real-time stress measurement provides a direct evidence for this oscillatory stress relaxation in the layer-by-layer growth.
Asaoka, Hidehito; Yamazaki, Tatsuya; Filimonov, S.*; Shamoto, Shinichi
Proceedings of 14th International Conference on Thin Films (ICTF-14) & Reactive Sputter Deposition 2008 (RSD 2008), p.179 - 182, 2008/11
We report stress evolutions during Bi adsorption on Si(111) 77 and initial stages of Bi-mediated Ge growth on Si(111). Surface stress is determined by using a real-time measurement of the substrate curvature. We find a difference in the surface stress between clean Si(111) 77 surface and Si(111) surface covered with one monolayer of Bi, and an increase in the surface stress accompanied by RHEED intensity oscillation of the specular beam during ideal pseudomorphic Ge layer growth with Bi. For Ge coverage of up to 2 bilayers, the stress evolution shows a clear stress relaxation due to formation of trenches on the Ge surface and injection of misfit dislocations into the Ge/Si interface.
Filimonov, S. N.*; Cherepanov, V.*; Paul, N.*; Asaoka, Hidehito; Brona, J.*; Voigtl
nder, B.*
Surface Science, 599(1-3), p.76 - 84, 2005/12
Times Cited Count：16 Percentile：55.78(Chemistry, Physical)no abstracts in English
Asaoka, Hidehito; Yamazaki, Tatsuya; Shamoto, Shinichi; Filimonov, S.*; Suemitsu, Maki*
no journal, ,
no abstracts in English
Asaoka, Hidehito; Yamazaki, Tatsuya; Shamoto, Shinichi; Filimonov, S.*; Suemitsu, Maki*
no journal, ,
no abstracts in English
Asaoka, Hidehito; Yamazaki, Tatsuya; Shamoto, Shinichi; Filimonov, S.*; Suemitsu, Maki*
no journal, ,
no abstracts in English
