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論文

Probing the quantum phase transition in Mott insulator BaCoS$$_{2}$$ tuned by pressure and Ni substitution

Guguchia, Z.*; Frandsen, B. A.*; Santos-Cottin, D.*; 社本 真一; Gauzzi, A.*; 植村 泰朋*; 他12名*

Physical Review Materials (Internet), 3(4), p.045001_1 - 045001_9, 2019/04

$$mu$$SRを用いて、BaCoS$$_{2}$$を圧力とNi置換でモット転移を調整し、量子相転移の様子を調べた。その結果、ゼロ温度で両方の量子相転移が一次転移であることがわかった。

論文

Uniaxial pressure effect on the magnetic ordered moment and transition temperatures in BaFe$$_{2-x}$$T$$_{x}$$As$$_{2}$$ ($$T$$ = Co,Ni)

Tam, D. M.*; Song, Y.*; Man, H.*; Cheung, S. C.*; Yin, Z.*; Lu, X.*; Wang, W.*; Frandsen, B. A.*; Liu, L.*; Gong, Z.*; et al.

Physical Review B, 95(6), p.060505_1 - 060505_6, 2017/02

 被引用回数:8 パーセンタイル:25.41(Materials Science, Multidisciplinary)

We use neutron diffraction and muon spin relaxation to study the effect of in-plane uniaxial pressure on the antiferromagnetic (AF) orthorhombic phase in BaFe$$_{2-x}$$T$$_{x}$$As$$_{2}$$ and its Co- and Ni-substituted members near optimal superconductivity. In the low-temperature AF ordered state, uniaxial pressure necessary to detwin the orthorhombic crystals also increases the magnetic ordered moment, reaching an 11% increase under 40 MPa for BaFe$$_{1.9}$$Co$$_{0.1}$$As$$_2$$, and a 15% increase for BaFe$$_{1.915}$$Ni$$_{0.085}$$As$$_2$$. We also observe an increase of the AF ordering temperature ($$T_N$$) of about 0.25 K/MPa in all compounds, consistent with density functional theory calculations that reveal better Fermi surface nesting for itinerant electrons under uniaxial pressure. The doping dependence of the magnetic ordered moment is captured by combining dynamical mean field theory with density functional theory, suggesting that the pressure-induced moment increase near optimal superconductivity is closely related to quantum fluctuations and the nearby electronic nematic phase.

論文

Volume-wise destruction of the antiferromagnetic Mott insulating state through quantum tuning

Frandsen, B. A.*; Liu, L.*; Cheung, S. C.*; Guguchia, Z.*; Khasanov, R.*; Morenzoni, E.*; Munsie, T. J. S.*; Hallas, A. M.*; Wilson, M. N.*; Cai, Y.*; et al.

Nature Communications (Internet), 7, p.12519_1 - 12519_8, 2016/08

 被引用回数:7 パーセンタイル:40.56(Multidisciplinary Sciences)

RENiO$$_3$$ (RE = rare-earth element) and V$$_2$$O$$_3$$ are archetypal Mott insulator systems. When tuned by chemical substitution (RENiO$$_3$$) or pressure (V$$_2$$O$$_3$$), they exhibit a quantum phase transition (QPT) between an antiferromagnetic Mott insulating state and a paramagnetic metallic state. Because novel physics often appears near a Mott QPT, the details of this transition, such as whether it is first or second order, are important. Here, we demonstrate through muon spin relaxation/rotation experiments that the QPT in RENiO$$_3$$ and V$$_2$$O$$_3$$ is first order: the magnetically ordered volume fraction decreases to zero at the QPT, resulting in a broad region of intrinsic phase separation, while the ordered magnetic moment retains its full value until it is suddenly destroyed at the QPT. These findings bring to light a surprising universality of the pressure-driven Mott transition, revealing the importance of phase separation and calling for further investigation into the nature of quantum fluctuations underlying the transition.

論文

Diluted ferromagnetic semiconductor Li(Zn,Mn)P with decoupled charge and spin doping

Deng, Z.*; Zhao, K.*; Gu, B.; Han, W.*; Zhu, J. L.*; Wang, X. C.*; Li, X.*; Liu, Q. Q.*; Yu, R. C.*; 後神 達郎*; et al.

Physical Review B, 88(8), p.081203_1 - 081203_5, 2013/08

 被引用回数:50 パーセンタイル:6.49(Materials Science, Multidisciplinary)

We report the discovery of a diluted magnetic semiconductor, Li(Zn,Mn)P, in which charge and spin are introduced independently via lithium off-stoichiometry and the isovalent substitution of Mn$$^{2+}$$ for Zn$$^{2+}$$, respectively. Isostructural to (Ga,Mn)As, Li(Zn,Mn)P was found to be a ${it p}$-type ferromagnetic semiconductor with excess lithium providing charge doping. First-principles calculations indicate that excess Li is favored to partially occupy the Zn site, leading to hole doping. Ferromagnetism with Curie temperature up to 34 K is achieved while the system still shows semiconducting transport behavior.

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