JOPSS - Search Results

Journal Articles

Energetically deep defect centers in vapor-phase grown zinc oxide

Frank, T.*; Pensl, G.*; Tana-Zaera, R.*; Ziga-Prez, J.*; Martnez-Toms, C.*; Muoz-Sanjos, V.*; Oshima, Takeshi; Ito, Hisayoshi; Hofmann, D.*; Pfisterer, D.*; et al.

Applied Physics A, 88(1), p.141 - 145, 2007/07

https://doi.org/10.1007/s00339-007-3963-3

Times Cited Count：48 Percentile：82.94(Materials Science, Multidisciplinary)

Deep Level Transient Spectroscopy (DLTS) measurements were carried out to investigate defects in vapor-phase grown ZnO crystals. The generation of defect center labeled E4 subsequent to annealing in different ambients was monitored. By conducting electron irradiations with energies, where either both the Zn- and O-sublattice are damaged or according to only the Zn-lattice, a chemical assignment to the defect centers E4 and E3 could be accomplished. DLTS investigations of ZnO samples under illumination give an evidence that E4 is a negative-U center.

Journal Articles

Defect-engineering in SiC by ion implantation and electron irradiation

Pensl, G.*; Ciobanu, F.*; Frank, T.*; Kirmse, D.*; Krieger, M.*; Reshanov, S.*; Schmid, F.*; Weidner, M.*; Oshima, Takeshi; Ito, Hisayoshi; et al.

Microelectronic Engineering, 83(1), p.146 - 149, 2006/01

https://doi.org/10.1016/j.mee.2005.10.040

Times Cited Count：15 Percentile：59.32(Engineering, Electrical & Electronic)

no abstracts in English

Journal Articles

Vacancy defects detected by positron annihilation

Kawasuso, Atsuo; Weidener, M.*; Redmann, F.*; Frank, T.*; Sperr, P.*; Kgel, G.*; Yoshikawa, Masahito; Ito, Hisayoshi; Krause-Rehberg, R.*; Triftshuser, W.*; et al.

Silicon Carbide, p.563 - 584, 2004/00

no abstracts in English

Journal Articles

Polytype-dependent vacancy annealing studied by positron annihilation

Kawasuso, Atsuo; Yoshikawa, Masahito; Maekawa, Masaki; Ito, Hisayoshi; Chiba, Toshinobu*; Redmann, F.*; Rehberg, R. K.*; Weidner, M.*; Frank, T.*; Pensl, G.*

Materials Science Forum, 433-436, p.477 - 480, 2003/08

no abstracts in English

Journal Articles

Radiation-induced defects in 4H- and 6H-SiC epilayers studies by positron annihilation and deep-level transient spectroscopy

Kawasuso, Atsuo; Weidner, M.*; Redmann, F.*; Frank, T.*; Krause-Rehberg, R.*; Pensl, G.*; Sperr, P.*; Triftshuser, W.*; Ito, Hisayoshi

Materials Science Forum, 389-393, p.489 - 492, 2002/05

no abstracts in English

Journal Articles

Annealing behavior of vacancies and Z $_{1/2}$ levels in electron-irradiated 4H-SiC studied by positron annihilation and deep-level transient spectroscopy

Kawasuso, Atsuo; Redmann, F.*; Krause-Rehberg, R.*; Weidner, M.*; Frank, T.*; Pensl, G.*; Sperr, P.*; Triftshuser, W.*; Ito, Hisayoshi

Applied Physics Letters, 79(24), p.3950 - 3952, 2001/12

https://doi.org/10.1063/1.1426259

Times Cited Count：39 Percentile：79.52(Physics, Applied)

no abstracts in English

Journal Articles

Formation and annihilation of intrinsic-related defect centers in high energy electron-irradiated or ion-implanted 4H- and 6H-silicon carbide

Weidner, M.*; Frank, T.*; Pensl, G.*; Kawasuso, Atsuo; Ito, Hisayoshi; Krause-Rehberg, R.*

Physica B; Condensed Matter, 308-310, p.633 - 636, 2001/12

https://doi.org/10.1016/S0921-4526(01)00772-4

Times Cited Count：29 Percentile：78.2(Physics, Condensed Matter)

no abstracts in English

Journal Articles

Vacancies in He-implanted 4H and 6H SiC epilayers studied by positron annihilation

Kawasuso, Atsuo; Weidner, M.*; Redmann, F.*; Frank, T.*; Sperr, P.*; Krause-Rehberg, R.*; Triftshuser, W.*; Pensl, G.*

Physica B; Condensed Matter, 308-310, p.660 - 663, 2001/12

https://doi.org/10.1016/S0921-4526(01)00783-9

Times Cited Count：13 Percentile：57.97(Physics, Condensed Matter)

no abstracts in English

Journal Articles

Vacancies and deep levels in electron-irradiated 6 SiC epilayers studied by positron annihilation and deep level transient spectroscopy

Kawasuso, Atsuo; Redmann, F.*; Krause-Rehberg, R.*; Frank, T.*; Weidner, M.*; Pensl, G.*; Sperr, P.*; Ito, Hisayoshi

Journal of Applied Physics, 90(7), p.3377 - 3382, 2001/10

https://doi.org/10.1063/1.1402144

Times Cited Count：42 Percentile：81.14(Physics, Applied)

no abstracts in English

Journal Articles

Annealing process of defects in epitaxial SiC induced by He and electron irradiation; Positron annihilation study

Kawasuso, Atsuo; Redmann, F.*; Krause-Rehberg, R.*; Sperr, P.*; Frank, T.*; Weidner, M.*; Pensl, G.*; Ito, Hisayoshi

Materials Science Forum, 353-356, p.537 - 540, 2001/00

no abstracts in English

Journal Articles

Generation and annihilation of intrinsic-related defect centers in 4H/6H-SiC

Frank, T.*; Weidner, M.*; Ito, Hisayoshi; Pensl, G.*

Materials Science Forum, 353-356, p.439 - 442, 2001/00

no abstracts in English

Journal Articles

Crystallization of an amorphous layer in P $^{+}$ -implanted 6H-SiC studied by monoenergetic positron beams

Uedono, Akira*; Tanigawa, Shoichiro*; Oshima, Takeshi; Ito, Hisayoshi; Yoshikawa, Masahito; Nashiyama, Isamu; Frank, T.*; Pensl, G.*; Suzuki, Ryoichi*; Odaira, Toshiyuki*; et al.

Journal of Applied Physics, 87(9), p.4119 - 4125, 2000/05

https://doi.org/10.1063/1.373039

Times Cited Count：12 Percentile：49.32(Physics, Applied)

no abstracts in English

Journal Articles

Relationship between donor activation and defect annealing in 6H-SiC hot-implanted with phosphrous ions

Oshima, Takeshi; Uedono, Akira*; Ito, Hisayoshi; Yoshikawa, Masahito; Kojima, Kazutoshi; Okada, Sohei; Nashiyama, Isamu; Abe, Koji*; Tanigawa, Shoichiro*; Frank, T.*; et al.

Materials Science Forum, 338-342, p.857 - 860, 2000/00

no abstracts in English

Oral presentation

Shallow and deep defect levels in SiC

Pensl, G.*; Frank, T.*; Reshanov, S.*; Schmid, F.*; Weidner, M.*; Oshima, Takeshi; Ito, Hisayoshi

no journal, ,

no abstracts in English

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Energetically deep defect centers in vapor-phase grown zinc oxide

Defect-engineering in SiC by ion implantation and electron irradiation

Vacancy defects detected by positron annihilation

Polytype-dependent vacancy annealing studied by positron annihilation

Radiation-induced defects in 4H- and 6H-SiC epilayers studies by positron annihilation and deep-level transient spectroscopy

Annealing behavior of vacancies and Z $_{1/2}$ levels in electron-irradiated 4H-SiC studied by positron annihilation and deep-level transient spectroscopy

Formation and annihilation of intrinsic-related defect centers in high energy electron-irradiated or ion-implanted 4H- and 6H-silicon carbide

Vacancies in He-implanted 4H and 6H SiC epilayers studied by positron annihilation

Vacancies and deep levels in electron-irradiated 6 SiC epilayers studied by positron annihilation and deep level transient spectroscopy

Annealing process of defects in epitaxial SiC induced by He and electron irradiation; Positron annihilation study

Generation and annihilation of intrinsic-related defect centers in 4H/6H-SiC

Crystallization of an amorphous layer in P $^{+}$ -implanted 6H-SiC studied by monoenergetic positron beams

Relationship between donor activation and defect annealing in 6H-SiC hot-implanted with phosphrous ions

Shallow and deep defect levels in SiC