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Fujieda, Shinji*; Terai, Masayuki*; Saito, Motofumi*; Toda, Akio*; Miura, Yoshinao*; Liu, Z.*; Teraoka, Yuden; Yoshigoe, Akitaka; Wilde, M.*; Fukutani, Katsuyuki*
ECS Transactions, 6(3), p.185 - 202, 2007/00
In order to find how bias temperature instability occurs in advanced gate stacks, we will review experimental results of our investigation on SiO, plasma-nitrided SiON, HfSiON and HfSiON with Ni-silicide electrodes. It thus seems that we need to clarify and control the chemical and physical influences on the insulator bulk and the insulator/Si interface caused by newly incorporated materials and process technologies, in order to ensure the reliability of bias temperature instability for advanced gate stacks.
Sato, Masayasu; Sakurai, Shinji; Nishio, Satoshi; Tobita, Kenji; Inoue, Takashi; Nakamura, Yukiharu; Shinya, Kichiro*; Fujieda, Hirobumi*; DEMO Plant Design Team
Fusion Engineering and Design, 81(8-14), p.1277 - 1284, 2006/02
Times Cited Count:14 Percentile:68.21(Nuclear Science & Technology)no abstracts in English
Fujieda, Shinji*; Miura, Yoshinao*; Saito, Motofumi*; Teraoka, Yuden; Yoshigoe, Akitaka
Microelectronics Reliability, 45(1), p.57 - 64, 2005/01
Times Cited Count:11 Percentile:51.41(Engineering, Electrical & Electronic)To characterize the interface defects that are responsible for the negative-bias temperature instability (NBTI) of a thin plasma-nitrided SiON/Si system, we carried out inerface trap density measurements, electron-spin resonance spectroscopy and synchrotron radiation XPS. The NBTI was shown to occur mainly through the dehydrogenation of the interfacial Si dangling bonds (P defects). Although we suggest that non- P defects are also generated by the negative-bias temperature stress, nitrogen dangling bonds do not seem to be included. The plasma-nitridation process was confirmed to generate sub-oxides at the interface and thus increase the interface trap density. Furthermore, it was found that the nitridation induces another type of P defect than that at pure-SiO/Si interfacec. Such an increase and structural change of the interfacial defects are likely the causes of the nitridation-enhanced NBTI.
Takechi, Manabu; Fujieda, Hirobumi; Sakurai, Shinji; Matsukawa, Makoto; Masaki, Kei; Shibama, Yusuke; Higashijima, Satoru; Shibanuma, Kiyoshi; Sakasai, Akira
no journal, ,
no abstracts in English
Takechi, Manabu; Fujieda, Hirobumi*; Sakurai, Shinji; Masaki, Kei; Shibama, Yusuke; Matsunaga, Go; Shibanuma, Kiyoshi; Sakasai, Akira
no journal, ,
We performed the evaluation of over current of poloidal coils and EM force of in-vessel coils with DINA code during disruption for design of in-vessel components of JT-60SA. We performed disruption simulation for the case of upward and downward VDE and major disruption of 5.5MA plasmas at end of burn. The maximum induced current of poloidal coils is about 1.7kA. It is found that amplitude of induced current does not depend on the direction of the plasma movement at disruption and current quench time. EM force of the fast position control coil with 24 turns is 1.2 times larger than that with 16 turns.
Takechi, Manabu; Matsunaga, Go; Kurita, Genichi; Sakurai, Shinji; Fujieda, Hirobumi*; Ide, Shunsuke; Aiba, Nobuyuki; Bolzonella, T.*; Ferro, A.*; Novello, L.*; et al.
no journal, ,
One of the important missions of JT-60SA is to demonstrate and develop steady-state high beta operation in order to supplement ITER toward DEMO. Specifications of plasma control system including the stabilizing plate, the RWM control coils, the error field correction coils and fast position control coils were determined based on simulations and expected plasma regime. Full non-inductive steady-state plasma with at MA will be achieved with these control systems. Simulation of plasma disruption was also performed to evaluate design values of Electro Magnetic forces of components.