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Nakamura, Toshihiro*; Adachi, Sadao*; Fujii, Minoru*; Sugimoto, Hiroshi*; Miura, Kenta*; Yamamoto, Shunya
Physical Review B, 91(16), p.165424_1 - 165424_8, 2015/04
Times Cited Count:16 Percentile:54.38(Materials Science, Multidisciplinary)Semiconductor nanocrystals have unique electrical and optical properties, because of the quantum confinement effect, and the doping of impurities into nanocrystals. In this study, we investigated the photoluminescence (PL) properties of phosphorus- (P) and boron- (B) co-doped Si nanocrystals (Si NCs), which was synthesized using an ion implantation technique. The Si-NC size (average diameter: 3.5, 4.4, 5.2 nm) and the P and B ion doses (0.1-4.510
cm
)values were systematically varied. We find that the PL peak energy shifts to lower values with increasing the average diameters of Si NCs and PB ion dose. The results of PL measurements indicate that the PL spectra are due to the band-to-band transition at the reduced Si-NC band gap caused by the formation of impurity and the radiative transitions between defect- and/or impurity-related localized states. It was found that the PL properties can be controlled by varying the Si-NC size as well as the dopant concentration.
Nakamura, Toshihiro*; Adachi, Sadao*; Fujii, Minoru*; Miura, Kenta*; Yamamoto, Shunya
Physical Review B, 85(4), p.045441_1 - 045441_7, 2012/01
Times Cited Count:26 Percentile:69.35(Materials Science, Multidisciplinary)Silicon nanocrystals (Si-nc's) such as nanometer-sized Si dots embedded in a SiO matrix and porous Si have been intensively investigated because of their interesting photoluminescence (PL) properties. Si-nc's exhibit strong and visible emission at room temperature. Because of their compatibility with Si-based technology, light-emitting Si-nc's are an attractive candidate for materials used in various optoelectronic device applications. In this study, the PL properties of n- and p-type dopants phosphorus (P) and boron (B) co-doped Si-nc's prepared by the ion implantation were studied. For (P, B) co-doped Si-nc's, the donor-acceptor (D-A)-pair recombination emission was clearly observed on the long-wavelength side of the intrinsic Si-nc emission. The D-A-pair recombination energy is found to be smaller than the band-gap energy of bulk Si and is strongly dependent on the number of P and B impurities doped in a Si-nc's.
Konomura, Mamoru; Ogawa, Takashi; Okano, Yasushi; Yamaguchi, Hiroyuki; Murakami, Tsutomu; Takaki, Naoyuki; Nishiguchi, Youhei; Sugino, Kazuteru; Naganuma, Masayuki; Hishida, Masahiko; et al.
JNC TN9400 2004-035, 2071 Pages, 2004/06
The attractive concepts for Sodium-, lead-bismuth-, helium- and water-cooled FBRs have been created through using typical plant features and employing advanced technologies. Efforts on evaluating technological prospects of feasibility have been paid for these concepts. Also, it was comfirmed if these concepts satisfy design requierments of capability and performance presumed in the feasibilty study on commertialization of Fast Breeder Reactor Systems. As results, it was concluded that the selection of sodium-cooled reactor was most rational for practical use of FBR technologies in 2015.
Takase, Kazuyuki; Ose, Yasuo*; Fujii, Sadao*
Dai-17-Kai Suchi Ryutai Rikigaku Shimpojiumu Koen Yoshishu, p.B2_2_1 - B2_2_4, 2003/12
no abstracts in English
Takase, Kazuyuki; Ose, Yasuo*; Fujii, Sadao*;
Nihon Oyo Suri Gakkai 2002-Nendo Nenkai Koen Rombunshu (Internet), 7 Pages, 2002/00
no abstracts in English
Utsumi, Takayuki*; Sasaki, Akira; Kunugi, Tomoaki*; Fujii, Sadao*; Akamatsu, Mikio*
Proceedings of 4th International Conference on Supercomputing in Nuclear Applications (SNA 2000) (CD-ROM), 10 Pages, 2000/09
no abstracts in English
Utsumi, Takayuki*; Sasaki, Akira; Fujii, Sadao*
Keisan Kogaku Koenkai Rombunshu, 5, 4 Pages, 2000/05
no abstracts in English
Utsumi, Takayuki*; Sasaki, Akira; Kunugi, Tomoaki*; Fujii, Sadao*; Akamatsu, Mikio*
Proceedings of 13th International Conference on High-Power Particle Beams (BEAMS 2000) (CD-ROM), 4 Pages, 2000/00
no abstracts in English
Takase, Kazuyuki; Kunugi, Tomoaki; Fujii, Sadao*; Shibazaki, Hiroaki*
Flow Visualization Image Process. 1997, 1(00), p.185 - 190, 1997/00
no abstracts in English
Fumizawa, Motoo; Kunugi, Tomoaki; Hishida, Makoto; ; Fujii, Sadao*; Igarashi, Minoru*
Nuclear Technology, 110, p.263 - 272, 1995/05
Times Cited Count:4 Percentile:42.92(Nuclear Science & Technology)no abstracts in English
Kugo, Teruhiko; Fujii, Sadao*; Nakagawa, Masayuki
JAERI-Data/Code 94-001, 187 Pages, 1994/08
no abstracts in English
Maruyama, So; Fujimoto, Nozomu; Sudo, Yukio; Murakami, Tomoyuki*; Fujii, Sadao*
Nucl. Eng. Des., 152, p.183 - 196, 1994/00
Times Cited Count:16 Percentile:78.15(Nuclear Science & Technology)no abstracts in English
Maruyama, So; Yamashita, Kiyonobu; Fujimoto, Nozomu; Murata, Isao; Sudo, Yukio; Murakami, Tomoyuki*; Fujii, Sadao*
Journal of Nuclear Science and Technology, 30(11), p.1186 - 1194, 1993/11
Times Cited Count:7 Percentile:67.65(Nuclear Science & Technology)no abstracts in English
Fujii, Sadao*; ; Fumizawa, Motoo; Kunugi, Tomoaki; Hishida, Makoto
Kashika Joho Gakkai-Shi, 13(SUPPL.1), p.257 - 260, 1993/07
no abstracts in English
Fujii, Sadao*; ; Igarashi, Minoru*; Fumizawa, Motoo; Kunugi, Tomoaki; Hishida, Makoto
Proc. of the 6th Int. Topical Meeting on Nuclear Reactor Thermal Hydraulics,Vol. 2, p.1498 - 1505, 1993/00
no abstracts in English
Nakagawa, Masayuki; Fujii, Sadao*; ;
Journal of Nuclear Science and Technology, 29(11), p.1116 - 1119, 1992/11
no abstracts in English
; Fujii, Sadao*; Fumizawa, Motoo; Kunugi, Tomoaki; Hishida, Makoto
Proc. of the 2nd JSME-KSME Thermal Engineering Conf. Vol. 1, p.1-7 - 1-12, 1992/00
no abstracts in English
Fujii, Sadao*; Akino, Norio; Hishida, Makoto; ; Sanokawa, Konomo
JSME Int. J., Ser. 2, 34(3), p.348 - 354, 1991/00
no abstracts in English
Maruyama, So; Murakami, Tomoyuki*; Fujii, Sadao*; Fujimoto, Nozomu; Tanaka, Toshiyuki; Sudo, Yukio; Saito, Shinzo
Proc. of the 1st JSME/ASME Joint Int. Conf. on Nuclear Engineering,Vol. 1, p.425 - 430, 1991/00
no abstracts in English
Sawa, Kazuhiro; Fujii, Sadao*; Shiozawa, Shusaku;
JAERI-M 88-258, 45 Pages, 1988/12
no abstracts in English