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Journal Articles

Spin orientation transition across the single-layer graphene/nickel thin film interface

Matsumoto, Yoshihiro; Entani, Shiro; Koide, Akihiro*; Otomo, Manabu; Avramov, P.; Naramoto, Hiroshi*; Amemiya, Kenta*; Fujikawa, Takashi*; Sakai, Seiji

Journal of Materials Chemistry C, 1(35), p.5533 - 5537, 2013/09

 Times Cited Count:22 Percentile:71.5(Materials Science, Multidisciplinary)

Journal Articles

The Physical origin of the InSb(111)A surface reconstruction transient

Proessdorf, A.*; Rodenbach, P.*; Grosse, F.*; Hanke, M.*; Braun, W.*; Riechert, H.*; Hu, W.; Fujikawa, Seiji*; Kozu, Miwa; Takahashi, Masamitsu

Surface Science, 606(17-18), p.1458 - 1461, 2012/09

 Times Cited Count:1 Percentile:5.76(Chemistry, Physical)

Journal Articles

Local structures and magnetic properties of fullerene-Co systems studied by XAFS and XMCD analyses

Hojo, Ikuko*; Koide, Akihiro*; Matsumoto, Yoshihiro; Maruyama, Takashi*; Nagamatsu, Shinichi*; Entani, Shiro; Sakai, Seiji; Fujikawa, Takashi*

Journal of Electron Spectroscopy and Related Phenomena, 185(1-2), p.32 - 38, 2012/03

 Times Cited Count:1 Percentile:8.37(Spectroscopy)

Journal Articles

Growth temperature dependence of strain relaxation during InGaAs/GaAs(0 0 1) heteroepitaxy

Sasaki, Takuo*; Suzuki, Hidetoshi*; Sai, Akihisa*; Takahashi, Masamitsu; Fujikawa, Seiji; Kamiya, Itaru*; Oshita, Yoshio*; Yamaguchi, Masafumi*

Journal of Crystal Growth, 323(1), p.13 - 16, 2011/05

 Times Cited Count:17 Percentile:82.2(Crystallography)

Growth temperature dependence of strain relaxation during In$$_{0.12}]$$Ga$$_{0.88}$$As/GaAs(001) molecular beam epitaxy was studied by in situ X-ray reciprocal space mapping. Evolution of the residual strain and crystal quality for the InGaAs film was obtained as a function of film thickness at growth temperatures of 420, 445 and 477 $$^{circ}$$C. In the early stages of strain relaxation, it was found that evolution of the residual strain and crystal quality was dependent on the growth temperature. In order to discuss this observation quantitatively, the strain relaxation model was proposed based on the Dodson-Tsao kinetic model, and its validity was demonstrated by good agreement with the experimental residual strain. Additionally, rate coefficients reflecting dislocation motions during strain relaxation were obtained as a function of growth temperature and strain relaxation was discussed in terms of the thermally active dislocation motion.

Journal Articles

Multiplet scattering approach to XAS for Co-C$$_{60}$$ films

Hojo, Ikuko*; Matsumoto, Yoshihiro; Maruyama, Takashi*; Nagamatsu, Shinichi*; Entani, Shiro; Sakai, Seiji; Konishi, Takehisa*; Fujikawa, Takashi*

Photon Factory News, 29(1), p.20 - 25, 2011/05

no abstracts in English

Journal Articles

Structural changes caused by quenching of InAs/GaAs(001) quantum dots

Takahashi, Masamitsu; Fujikawa, Seiji

Japanese Journal of Applied Physics, 50(4), p.04DH06_1 - 04DH06_5, 2011/04

 Times Cited Count:5 Percentile:25.66(Physics, Applied)

Journal Articles

Surface study of organopalladium molecules on S-terminated GaAs

Konishi, Tomoya*; Nishiwaki, Nagatoshi*; Tojo, Takashi*; Ishikawa, Takuma*; Teraoka, Teruki*; Ueta, Yukiko*; Kihara, Yoshifumi*; Moritoki, Hideji*; Tono, Tatsuo*; Musashi, Mio*; et al.

Physica Status Solidi (C), 8(2), p.405 - 407, 2011/02

 Times Cited Count:3 Percentile:77.76

Journal Articles

Time-resolved X-ray diffraction measurements of high-density InAs quantum dots on Sb/GaAs layers and the suppression of coalescence by Sb-irradiated growth interruption

Kakuda, Naoki*; Kaizu, Toshiyuki*; Takahashi, Masamitsu; Fujikawa, Seiji; Yamaguchi, Koichi*

Japanese Journal of Applied Physics, 49(9), p.095602_1 - 095602_4, 2010/09

 Times Cited Count:2 Percentile:11.33(Physics, Applied)

Journal Articles

Real-time observation of anisotropic strain relaxation by three-dimensional reciprocal space mapping during InGaAs/GaAs(001) growth

Suzuki, Hidetoshi*; Sasaki, Takuo*; Sai, Akihisa*; Oshita, Yoshio*; Kamiya, Itaru*; Yamaguchi, Masafumi*; Takahashi, Masamitsu; Fujikawa, Seiji

Applied Physics Letters, 97(4), p.041906_1 - 041906_3, 2010/07

 Times Cited Count:30 Percentile:76.37(Physics, Applied)

Journal Articles

In situ study of strain relaxation mechanisms during lattice-mismatched InGaAs/GaAs growth by X-ray reciprocal space mapping

Sasaki, Takuo*; Suzuki, Hidetoshi*; Sai, Akihisa*; Takahashi, Masamitsu; Fujikawa, Seiji; Oshita, Yoshio*; Yamaguchi, Masafumi*

Materials Research Society Symposium Proceedings, Vol.1268, 6 Pages, 2010/05

 Times Cited Count:0 Percentile:0.01

Journal Articles

${it In situ}$ real-time X-Ray reciprocal space mapping during InGaAs/GaAs growth for understanding strain relaxation mechanisms

Sasaki, Takuo*; Suzuki, Hidetoshi*; Sai, Akihisa*; Lee, J.-H.*; Takahashi, Masamitsu; Fujikawa, Seiji; Arafune, Koji*; Kamiya, Itaru*; Oshita, Yoshio*; Yamaguchi, Masafumi*

Applied Physics Express, 2, p.085501_1 - 085501_3, 2009/07

 Times Cited Count:34 Percentile:78.52(Physics, Applied)

Oral presentation

In situ observation of InP(001) growth under metalorganic chemical vapor deposition using synchrotron radiation source

Fujikawa, Seiji; Kawamura, Tomoaki*; Bhunia, S.*; Watanabe, Yoshio*

no journal, , 

Growth mechanism of InP(001) of metalorganic chemical vapor deposition has been studied by X-ray reflectivity and grazing incidence X-ray diffraction (GIXD). The changes of reflectivity signal suggested that growth mode depended on substrate temperature, and particularly the step-flow growth mode was dominant at more than 550$$^{circ}$$C. Monitoring the fractional-order reflection of (2$$times$$1)-InP(001) using GIXD during the step-flow growth, the changes of fractional-order reflection suggested that indium atom migrate on the substrate surface more than 1 minute during the growth.

Oral presentation

Electronic and spin states of C$$_{60}$$-Co compound affecting giant TMR effect, 2

Matsumoto, Yoshihiro; Sakai, Seiji; Entani, Shiro; Nagamatsu, Shinichi*; Hojo, Ikuko*; Fujikawa, Takashi*; Shimada, Toshihiro*; Naramoto, Hiroshi*; Maeda, Yoshihito; Yokoyama, Toshihiko*

no journal, , 

no abstracts in English

Oral presentation

Oral presentation

Observation of Fe-As compound thin film on GaAs(001) by in-plane X-ray diffraction

Fujikawa, Seiji; Takahashi, Masamitsu

no journal, , 

no abstracts in English

Oral presentation

In situ observation of Fe growth on GaAs(001) and InAs(001) by X-ray diffraction

Fujikawa, Seiji; Takahashi, Masamitsu

no journal, , 

In this work, we evaluated Fe films on GaAs(001) and InAs(001) by in-situ X-ray diffraction measurements with increasing Fe thickness. While the Fe film on InAs(001) was strained even at 30 ML, Fe on GaAs(001) was already relaxed at 4 ML with Fe$$_{3}$$Ga$$_{2-x}$$As$$_{x}$$2$$bar{2}$$$$bar{2}$$ diffraction. While the increase of Fe$$_{3}$$Ga$$_{2-x}$$As$$_{x}$$2$$bar{2}$$$$bar{2}$$ intensity shows down at 12 ML, The intensity of Fe 020 increasingly rises. These results suggest that interfacial Fe$$_{3}$$Ga$$_{2-x}$$As$$_{x}$$2$$bar{2}$$2 on GaAs(001) facilitate the strain relief of Fe/GaAs(001).

Oral presentation

Element specific analysis of the molecular spintronics materials using synchrotron radiation

Matsumoto, Yoshihiro; Entani, Shiro; Naramoto, Hiroshi*; Sakai, Seiji; Shimada, Toshihiro*; Yokoyama, Toshihiko*; Fujikawa, Takashi*

no journal, , 

no abstracts in English

Oral presentation

X-ray diffraction study on hydrogen-induced Pd(110) surface reconstruction

Takahashi, Masamitsu; Fujikawa, Seiji*; Hu, W.; Tajiri, Hiroo*

no journal, , 

Absorption of hydrogen into a substrate begins with dissociated adsorption of hydrogen molecules. The mechanism of the transition from adsorption to absorption is an important knowledge for improving the performance of hydrogen storage materials. The aim of the present study is to verify the hydrogen absorption model in atomic scale through quantitative determination of structures of hydrogen-adsorbed Pd(110) by synchrotron X-ray diffraction. Experiments were performed at a synchrotron beamline 13XU at SPring-8 using a surface X-ray diffractometer integrated with a UHV chamber equipped with a cryostat. We measured five crystal truncation rod (CTR) profiles with increasing substrate temperature to room temperature from 57 K after the substrate was exposed to 10$$^{-6}$$ Torr s hydrogen. Results show an atomic-scale picture that explains how adsorbed hydrogen is absorbed into the Pd bulk.

Oral presentation

Surface X-ray diffraction from single-crystalline metal; Formation of channel for hydrogen absorption

Takahashi, Masamitsu; Fujikawa, Seiji*; Hu, W.; Tajiri, Hiroo*

no journal, , 

no abstracts in English

Oral presentation

High interface spin polarization and its mechanism in fullerene-magnetic metal systems

Sakai, Seiji; Mitani, Seiji*; Matsumoto, Yoshihiro; Otomo, Manabu; Entani, Shiro; Avramov, P.; Naramoto, Hiroshi*; Fujikawa, Takashi*

no journal, , 

26 (Records 1-20 displayed on this page)