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Journal Articles

Development of Linear Interpolation System for SMK Model parameters Evaluated from Cellular-scale simulation (LISMEC) and its application to BNCT dosimetry

Shigehira, Takafumi*; Watanabe, Tsubasa*; Suzuki, Minoru*; Hirata, Yuho; Ogawa, Tatsuhiko; Fujimura, Atsushi*; Sakurai, Yoshinori*; Sato, Tatsuhiko

Journal of Radiation Research (Internet), 67(2), p.170 - 181, 2026/03

 Times Cited Count:1 Percentile:92.89(Biology)

Journal Articles

$$omega N$$ scattering length from $$omega$$ photoproduction on the proton near the reaction threshold

Ishikawa, Takatsugu*; Fujimura, Hisako*; Fukasawa, Hiroshi*; Hashimoto, Ryo*; He, Q.*; Honda, Yuki*; Hosaka, Atsushi; Iwata, Takahiro*; Kaida, Shun*; Kasagi, Jirota*; et al.

Physical Review C, 101(5), p.052201_1 - 052201_6, 2020/05

 Times Cited Count:7 Percentile:50.35(Physics, Nuclear)

Journal Articles

Rotational-coherence molecular laser isotope separation

Akagi, Hiroshi; Oba, Hironori; Yokoyama, Keiichi; Yokoyama, Atsushi; Egashira, Kazuhiro*; Fujimura, Yo*

Applied Physics B, 95(1), p.17 - 21, 2009/04

 Times Cited Count:8 Percentile:39.40(Optics)

We have proposed a laser isotope separation method, utilizing rotational coherence of a simple molecule. In the scheme, photoexcited molecules are isotopically separated by difference of rotational period between them. To illustrate this method, two-pulse photodissociation of mixed $$^{79}$$Br$$_{2}$$/$$^{81}$$Br$$_{2}$$ isotopes has been investigated theoretically. The photodissociation probabilities of $$^{79}$$Br$$_{2}$$ and $$^{81}$$Br$$_{2}$$ have been calculated as a function of time delay between the photoexcitation and dissociation laser pulses. We have demonstrated that isotope enrichment factor of $$^{79}$$Br relative to $$^{81}$$Br can be changed from 0.34 to 1.8, by simply changing the time delay only by 0.2 ns. Additionally, we have shown that this method is effective for heavy isotopes, based on mass dependence of the isotope enrichment factor.

Journal Articles

Detailed structural analysis and dielectric properties of silicon nitride film fabricated using pure nitrogen plasma generated near atmospheric pressure

Hayakawa, Ryoma*; Nakae, Mari*; Yoshimura, Takeshi*; Ashida, Atsushi*; Fujimura, Norifumi*; Uehara, Tsuyoshi*; Tagawa, Masahito*; Teraoka, Yuden

Journal of Applied Physics, 100(7), p.073710_1 - 073710_8, 2006/10

 Times Cited Count:13 Percentile:43.46(Physics, Applied)

A structural analysis and dielectric property measurements of silicon nitride films fabricated using atmospheric pressure (AP) plasma were carried out, and the results were compared to a radio frequency (RF) plasma case. Using AP plasma, 1.8-nm-thick films composed of Si$$_{3}$$N$$_{3.5}$$O$$_{0.7}$$ were obtained in the temperature range from 298 to 773 K. X-ray photoelectron spectroscopy and Rutherford backscattering spectrometry revealed 10% more nitrogen atoms corresponding to the NSi$$_{3}$$ bond in the film using AP plasma than those using RF plasma. In the temperature range, the leakage current densities were not affected by the temperature. Films fabricated at 298 K showed leakage current density of as low as 7$$times$$10$$^{-2}$$A/cm$$^{2}$$ at 5MV/cm. This value was one order of magnitude lower than that using RF plasma.

Journal Articles

Beam-palarization asymmetries for the $$p$$($$overrightarrow{gamma}$$,$$K$$$$^{+}$$)$$Lambda$$ and $$p$$($$overrightarrow{gamma}$$,$$K$$$$^{+}$$)$$Sigma$$$$^{0}$$ reactions for $$E$$$$_{gamma}$$=1.5-2.4 GeV

Zegers, R. G. T.*; Sumihama, Mizuki*; Ahn, D. S.*; Ahn, J. K.*; Akimune, Hidetoshi*; Asano, Yoshihiro; Chang, W. C.*; Dat$'e$, S.*; Ejiri, Hiroyasu*; Fujimura, Hisako*; et al.

Physical Review Letters, 91(9), p.092001_1 - 092001_4, 2003/08

 Times Cited Count:129 Percentile:94.46(Physics, Multidisciplinary)

no abstracts in English

Journal Articles

Evidence for a narrow $$S$$ = +1 Baryon resonance in photoproduction from the neutron

Nakano, Takashi*; Ahn, D. S.*; Ahn, J. K.*; Akimune, Hidetoshi*; Asano, Yoshihiro; Chang, W. C.*; Date, S.*; Ejiri, Hiroyasu*; Fujimura, Hisako*; Fujiwara, Mamoru; et al.

Physical Review Letters, 91(1), p.012002_1 - 012002_4, 2003/07

 Times Cited Count:1033 Percentile:99.84(Physics, Multidisciplinary)

no abstracts in English

Journal Articles

Theoretical investigation of the potential energy surfaces for the O($$^{1}$$D)+N$$_{2}$$O reaction

Akagi, Hiroshi; Yokoyama, Atsushi; Fujimura, Yo*; Takayanagi, Toshiyuki

Chemical Physics Letters, 324(5-6), p.423 - 429, 2000/07

 Times Cited Count:15 Percentile:42.10(Chemistry, Physical)

no abstracts in English

Oral presentation

Rotational-coherence molecular laser isotope separation

Akagi, Hiroshi; Oba, Hironori; Yokoyama, Keiichi; Yokoyama, Atsushi; Egashira, Kazuhiro*; Fujimura, Yo*

no journal, , 

We have proposed a laser isotope separation method, utilizing rotational coherence of a simple molecule. In the scheme, photoexcited molecules are isotopically separated by difference of rotational period between them. To illustrate this method, two-pulse photodissociation of mixed $$^{79}$$Br$$_{2}$$/$$^{81}$$Br$$_{2}$$ isotopes has been investigated theoretically. Additionally, we have shown that this method is effective for heavy isotopes, based on mass dependence of the isotope enrichment factor. The contrast ratio, which is defined as a ratio of the maximum enrichment factor to the minimum enrichment factor, does not depend on mass of the chosen isotopes significantly. Hence we conclude that the present method is effective for heavy isotopes.

Oral presentation

Comparison of chemical bonding structure at SiN/Si interface fabricated using atmospheric pressure plasma and RF plasma

Hayakawa, Ryoma*; Nakae, Mari*; Yoshida, Shinji*; Tagawa, Masahito*; Teraoka, Yuden; Yoshimura, Takeshi*; Ashida, Atsushi*; Kunugi, Shunsuke*; Uehara, Tsuyoshi*; Fujimura, Norifumi*

no journal, , 

Chemical bonding states of silicon nitride films formed by an atmospheric plasma method and a RF plasma method were analyzed by photoemission spectroscopy with synchrotron radiation and compared each other. The SiN/Si(111) interface formed by the RF plasma method consisted of 5 components. On the other hand, the SiN/Si(111) interface formed by the atmospheric plasma method consisted of 4 components. The Si$$_{3}$$N component is in the interface formed by the RF plasma method.

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