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Journal Articles

Epitaxial transformation of hcp-fcc Ti sublattices during nitriding processes of evaporated-Ti thin films due to nitrogen-implantation

Chen, Y.*; Feng, X.*; Kasukabe, Yoshitaka*; Yamamoto, Shunya; Yoshikawa, Masahito; Fujino, Yutaka*

Journal of Alloys and Compounds, 577(Suppl.1), p.S18 - S24, 2013/11

 Times Cited Count:0 Percentile:0.01(Chemistry, Physical)

Epitaxial transformation processes of titanium films due to Nitrogen-implantation have been clarified through in-situ observations by using transmission electron microscope(TEM)and electron energy loss spectroscope, along with molecular orbital calculations. The N$$_{2}$$$$^{+}$$ ions with 62 keV are implanted into as-deposited Ti films which consist of hcp-Ti and TiH$$_{x}$$ with preferred orientations, in the 400 kV analytic high resolution TEM combined with ion accelerators at JAEA Takasaki. Thus, titanium nitride (TiN$$_{y}$$) films with preferred orientations are epitaxially formed by the inheritance of partial atomic arrangement of hcp-Ti or TiH$$_{x}$$ in as-deposited Ti films and by the occupation of octahedral sites by N atoms, which elucidates that epitaxial transformation of hcp-fcc Ti sublattices occurs.

Journal Articles

Characterization of epitaxial transformation phenomena induced by the interaction of implanted N-ions with Ti thin films

Kasukabe, Yoshitaka*; Shimoda, Hiroyuki*; Chen, Y.*; Yamamoto, Shunya; Yoshikawa, Masahito; Fujino, Yutaka*

Nuclear Instruments and Methods in Physics Research B, 315, p.131 - 135, 2013/11

 Times Cited Count:1 Percentile:12.7(Instruments & Instrumentation)

Epitaxial transformation phenomena of titanium films due to Nitrogen-implantation have been clarified through in-situ observations by using transmission electron microscope(TEM)and electron energy loss spectroscope (EELS), along with molecular orbital calculations. The N$$^{2+}$$ ions with 62 keV are implanted into as-deposited Ti films which consist of hcp-Ti and TiH$$_{rm x}$$ with preferred orientations, in the 400 kV analytic high resolution TEM combined with ion accelerators at JAEA Takasaki. The result of EELS measurements indicates that the hcp-fcc transformation occurs preferentially above a critical concentration ratio, N/Ti $$sim$$ 0.25. This means that above the N/Ti $$sim$$ 0.25, the invasion of implanted N atom to the N-unoccupied octahedral site in the neighboring unit cell next to the N-occupied one in hcp-Ti occurs preferentially, and induces the growth of nucleus of the hcp-fcc transformation.

Journal Articles

In-situ observation of nitriding processes of evaporated-Ti thin films due to ion implantation in an analytical transmission electron microscope

Kasukabe, Yoshitaka*; Chen, Y.*; Yamamoto, Shunya; Yoshikawa, Masahito; Fujino, Yutaka*

e-Journal of Surface Science and Nanotechnology (Internet), 9, p.191 - 198, 2011/04

The purpose of this work is to study changes of the crystallographic and electronic structures of Ti films by heating and by nitriding during N-implantation into Ti films, using in-situ transmission electron microscope equipped with the instrument for electron energy loss spectroscopy, and then to clarify the atomistic nitriding processes of Ti thin films due to the N-implantation with the aid of self-consistent charge discrete variational X$$alpha$$ molecular orbital calculations. It is clarified that the maximum concentration of N in Ti films during the N-implantation and the change of electronic structures near the fermi level, respectively, depend on the implantation temperature and the ratio of N/Ti in Ti films. Furthermore, taking into account the bonding interaction of Ti sublattices with ligand N atoms, the transformation mechanisms between hcp-Ti and fcc-Ti sublattices due to the implantation of N atoms are discussed.

Journal Articles

Characterization of heating and nitriding processes of titanium thin films grown on NaCl(001) substrate held at room temperature

Kasukabe, Yoshitaka*; Watanabe, Yohei*; Yamamoto, Shunya; Yoshikawa, Masahito; Fujino, Yutaka*

e-Journal of Surface Science and Nanotechnology (Internet), 7, p.625 - 632, 2009/04

Titanium nitrides (TiN) are non-stoichiometric compounds and show covalent properties as well as metallic and ionic properties, which make them fascinating for both fundamental research and technological applications. The purpose of this work is to study changes of the crystallographic and electronic structures of Ti films by heating and by nitriding during N-implantation into Ti films separated from NaCl(001) substrates, using in-situ transmission electron microscope (TEM) equipped with the instrument for electron energy loss spectroscopy (EELS), and then to clarify the atomistic nitriding processes of Ti thin films due to the N-implantation with the aid of molecular orbital calculations. The present calculations throw light on the hcp-fcc transformation mechanism between fcc-Ti sublattices and hcp sublattices due to the release of H atoms or due to the implantation of N atoms, taking into account the bonding interaction of Ti sublattices with ligand H or N atoms.

Journal Articles

Atomistic nitriding processes of titanium thin films due to nitrogen-implantation

Kasukabe, Yoshitaka*; Nishida, Shinsaku*; Yamamoto, Shunya; Yoshikawa, Masahito; Fujino, Yutaka*

Applied Surface Science, 254(23), p.7942 - 7946, 2008/09

 Times Cited Count:7 Percentile:35.82(Chemistry, Physical)

In order to clarify atomistic growth processes of TiN$$_{y}$$ films due to ion implantation, in-situ observations by using transmission electron microscope and electron energy loss spectroscope at JAEA-Takasaki have been carried out, along with composition analysis and with the characterization of the electronic structure by molecular orbital calculation. The characterization of electronic structure of Ti films before and after implantation indicates that octahedral sites of hcp-Ti with larger space have higher electron density, which leads to the invasion of implanted ions into octahedral sites, and that the hcp-fcc transformation is induced by the shear in $$<$$010$$>$$ direction on (001) plane, promoted by the forming of $$pi$$-type covalent bonds mainly consisted of hybridized orbitals due to combination of Ti3d and N2p, and by the weakening of Ti-Ti bonds.

Journal Articles

Nitriding mechanism of titanium thin films by ion implantation

Kasukabe, Yoshitaka*; Wang, J. J.*; Yamamura, Tsutomu*; Fujino, Yutaka*; Yamamoto, Shunya; Yoshikawa, Masahito

Materia, 45(1), p.23 - 31, 2006/01

no abstracts in English

Journal Articles

Nitriding transformation of titanium thin films by nitrogen implantation

Kasukabe, Yoshitaka*; Wang, J. J.*; Yamamura, Tsutomu*; Yamamoto, Shunya; Fujino, Yutaka*

Thin Solid Films, 464-465, p.180 - 184, 2004/10

 Times Cited Count:9 Percentile:45.27(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

In-situ transmission electron microscope observation of nitriding processes of titanium thin films by nitrogen-implantation

Wang, J. J.*; Kasukabe, Yoshitaka*; Yamamura, Tsutomu*; Yamamoto, Shunya; Fujino, Yutaka*

Thin Solid Films, 464-465, p.175 - 179, 2004/10

 Times Cited Count:1 Percentile:7.49(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

An Ion channeling study on V$$_{2}$$D crystals

Yamaguchi, Sadae*; Takahiro, K.*; Fujino, Yutaka*; Naramoto, Hiroshi; Ozawa, Kunio*

Journal of Alloys and Compounds, 231, p.132 - 137, 1995/00

 Times Cited Count:4 Percentile:43.09(Chemistry, Physical)

no abstracts in English

Journal Articles

Recovery of carbon-implanted silicon and germanium

*; Fujino, Yutaka*; Naramoto, Hiroshi; Ozawa, Kunio*

Nuclear Instruments and Methods in Physics Research B, 39, p.409 - 412, 1989/00

 Times Cited Count:3 Percentile:51.7(Instruments & Instrumentation)

no abstracts in English

Journal Articles

Lattice location of deuterium in Nb-Mo with ion beams

Naramoto, Hiroshi; Kawatsura, Kiyoshi; Sataka, Masao; ; Nakai, Yota; Ozawa, Kunio*; *; Fujino, Yutaka*; *

Nuclear Instruments and Methods in Physics Research B, 33, p.595 - 598, 1988/00

no abstracts in English

11 (Records 1-11 displayed on this page)
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