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Zhao, Y.*; Suzuki, T.*; Iimori, T.*; Kim, H.-W.*; Ahn, J. R.*; Horio, Masafumi*; Sato, Yusuke*; Fukaya, Yuki; Kanai, T.*; Okazaki, K.*; et al.
Physical Review B, 105(11), p.115304_1 - 115304_8, 2022/03
Times Cited Count：2 Percentile：10.72(Materials Science, Multidisciplinary)no abstracts in English
Fukaya, Yuki; Zhao, Y.*; Kim, H.-W.*; Ahn, J.-R.*; Fukidome, Hirokazu*; Matsuda, Iwao*
Physical Review B, 104(18), p.L180202_1 - L180202_5, 2021/11
Times Cited Count：19 Percentile：67.67(Materials Science, Multidisciplinary)no abstracts in English
Hasegawa, Mika*; Sugawara, Kenta*; Suto, Ryota*; Sambonsuge, Shota*; Teraoka, Yuden; Yoshigoe, Akitaka; Filimonov, S.*; Fukidome, Hirokazu*; Suemitsu, Maki*
Nanoscale Research Letters, 10, p.421_1 - 421_6, 2015/10
Times Cited Count：26 Percentile：67.16(Nanoscience & Nanotechnology)Graphene has attracted much attention as a promising material in electronics and photonics. The graphitization temperature of 1473 K or higher of graphene-on-silicon(GOS), however, is still too high to be fully compatible with the Si technology. Here, the first application of Ni-assisted formation of graphene to the GOS method was reported. We demonstrate that the graphene formation temperature can be reduced by more than 200 K by this method. Moreover, solid-phase reactions during heating/annealing/cooling procedures have been investigated in detail by using 
synchrotron-radiation X-ray photoelectron spectroscopy. As a result, we clarify the role of Ni/SiC reactions, in which not only Ni silicidation and but also Ni carbonization is suggested as a key process in the formation of graphene.
Suemitsu, Maki*; Fukidome, Hirokazu*; Teraoka, Yuden
NanotechJapan Bulletin (Internet), 7(2), 5 Pages, 2014/04
no abstracts in English
Ide, Takayuki*; Kawai, Yusuke*; Handa, Hiroyuki*; Fukidome, Hirokazu*; Kotsugi, Masato*; Okochi, Takuo*; Enta, Yoshiharu*; Kinoshita, Toyohiko*; Yoshigoe, Akitaka; Teraoka, Yuden; et al.
Japanese Journal of Applied Physics, 51(6), p.06FD02_1 - 06FD02_4, 2012/06
Times Cited Count：7 Percentile：28.45(Physics, Applied)Fukidome, Hirokazu*; Abe, Shunsuke*; Takahashi, Ryota*; Imaizumi, Kei*; Inomata, Shuya*; Handa, Hiroyuki*; Saito, Eiji*; Enta, Yoshiharu*; Yoshigoe, Akitaka; Teraoka, Yuden; et al.
Applied Physics Express, 4(11), p.115104_1 - 115104_3, 2011/11
Times Cited Count：36 Percentile：76.88(Physics, Applied)Fukidome, Hirokazu*; Takahashi, Ryota*; Abe, Shunsuke*; Imaizumi, Kei*; Handa, Hiroyuki*; Kang, H. C.*; Karasawa, Hiromi*; Suemitsu, Tetsuya*; Otsuji, Taiichi*; Enta, Yoshiharu*; et al.
Journal of Materials Chemistry, 21(43), p.17242 - 17248, 2011/11
Times Cited Count：30 Percentile：62.44(Chemistry, Physical)Takahashi, Ryota*; Handa, Hiroyuki*; Abe, Shunsuke*; Imaizumi, Kei*; Fukidome, Hirokazu*; Yoshigoe, Akitaka; Teraoka, Yuden; Suemitsu, Maki*
Japanese Journal of Applied Physics, 50(7), p.070103_1 - 070103_6, 2011/07
Times Cited Count：32 Percentile：73.82(Physics, Applied)Imaizumi, Kei*; Handa, Hiroyuki*; Takahashi, Ryota*; Saito, Eiji*; Fukidome, Hirokazu*; Enta, Yoshiharu*; Teraoka, Yuden; Yoshigoe, Akitaka; Suemitsu, Maki*
Japanese Journal of Applied Physics, 50(7), p.070105_1 - 070105_6, 2011/07
Times Cited Count：4 Percentile：17.82(Physics, Applied)Takahashi, Ryota*; Miyamoto, Yu*; Handa, Hiroyuki*; Saito, Eiji*; Imaizumi, Kei*; Fukidome, Hirokazu*; Suemitsu, Maki*; Teraoka, Yuden; Yoshigoe, Akitaka
no journal, ,
New technologies beyond Si-CMOS technologies are neccessary in the Si electronic device developments. Now, graphene is attracted as it has a large mobility. It is well known that a 6H-SiC substrate surface changes to graphene by thermal annealing in vacuum as Si atoms sublimate. On the other hand, we developed the graphene-on-silicon (GOS) method in which graphene is formed from 3C-SiC thin film on an Si substrate by thermal annealing in vacuum. In this report, graphene formation processes were observed by LEED for a 6H-SiC(0001) substrate and a 3C-SiC(111) surface. It was found that the graphene formation process on a 3C-SiC(111) surface proceeded through the same surface reconstruction structure with that of 6H-SiC(0001) substrate.
Haramoto, Naoki*; Inomata, Shuya*; Sambonsuge, Shota*; Yoshigoe, Akitaka; Teraoka, Yuden; Fukidome, Hirokazu*; Suemitsu, Maki*
no journal, ,
no abstracts in English
Haramoto, Naoki*; Inomata, Shuya*; Takahashi, Ryota*; Yoshigoe, Akitaka; Teraoka, Yuden; Fukidome, Hirokazu*; Suemitsu, Maki*
no journal, ,
no abstracts in English
Fukidome, Hirokazu*; Takahashi, Ryota*; Imaizumi, Kei*; Handa, Hiroyuki*; Suemitsu, Maki*; Yoshigoe, Akitaka; Teraoka, Yuden
no journal, ,
Graphene layers could be formed firstly on an SiC thin film, which is fabricated on an Si substrate by a gas-source MBE method, by thermal annealing in vacuum (GOS structure). It should be controlled the interface between the SiC film and the graphene layers. In this study, relationships between chrystallographic symmetries of the Si substrate and the interface in the GOS structure were investigated. After an SiC(110), SiC(100), and SiC(111) surface is formed on the Si(110), Si(100), and Si(111) substrate, respectively, graphene layers were formed by thermal annealing of these SiC thin films up to 1523 K in vacuum. Photoemission spectroscopy of C1s core level with synchrotron radiation revealed that no interfacial layers are formed between the graphene and the SiC(110) and SiC(100) films while an interfacial layer is formed on the SiC(111) film.
Fukidome, Hirokazu*; Takahashi, Ryota*; Miyamoto, Yu*; Handa, Hiroyuki*; Kang, H. C.*; Karasawa, Hiromi*; Suemitsu, Tetsuya*; Otsuji, Taiichi*; Yoshigoe, Akitaka; Teraoka, Yuden; et al.
no journal, ,
By forming an SiC thin film on Si substrates and by thermally converting the film top surface into graphene, a graphene layer can be epitaxially formed on the Si substrates (graphene on silicon;GOS). In this method, epitaxial SiC thin films are first grown on the silicon substrate by using gas source molecular beam epitaxy. Normally, 3C-SiC(111), (110) and (100)-oriented films are grown on Si(111), (110) and (100) substrates, respectively. The surface of SiC thin films is then thermally graphitized by annealing at 1523 K in UHV to sublimate Si atoms. Not only 3C-SiC(111) but also (100) and (110) surfaces, produced epitaxial graphene as well. The Raman spectra show distinct D, G and G' bands for all these orientations. Synchrotron-radiation X-ray photoelectron spectrum of C1s presents sp
carbons atoms. The observation of the equally successful growth of graphene on these low-index SiC surfaces makes the GOS technology aviable in the post-Si device developments.
Inomata, Shuya*; Handa, Hiroyuki*; Abe, Shunsuke*; Takahashi, Ryota*; Imaizumi, Kei*; Fukidome, Hirokazu*; Teraoka, Yuden; Yoshigoe, Akitaka; Kotsugi, Masato*; Okochi, Takuo*; et al.
no journal, ,
no abstracts in English
Suemitsu, Maki*; Fukidome, Hirokazu*; Takahashi, Ryota*; Abe, Shunsuke*; Imaizumi, Kei*; Teraoka, Yuden; Yoshigoe, Akitaka
no journal, ,
no abstracts in English
Inomata, Shuya*; Takahashi, Ryota*; Handa, Hiroyuki*; Imaizumi, Kei*; Fukidome, Hirokazu*; Suemitsu, Maki*; Teraoka, Yuden; Yoshigoe, Akitaka
no journal, ,
no abstracts in English
Sambonsuge, Shota*; Abe, Shunsuke*; Takahashi, Ryota*; Imaizumi, Kei*; Handa, Hiroyuki*; Yoshigoe, Akitaka; Teraoka, Yuden; Kotsugi, Masato*; Okochi, Takuo*; Kinoshita, Toyohiko*; et al.
no journal, ,
no abstracts in English
Fukidome, Hirokazu*; Kotsugi, Masato*; Okochi, Takuo*; Yoshigoe, Akitaka; Teraoka, Yuden; Enta, Yoshiharu*; Kinoshita, Toyohiko*; Suemitsu, Tetsuya*; Otsuji, Taiichi*; Suemitsu, Maki*
no journal, ,
Hasegawa, Mika*; Sugawara, Kenta*; Suto, Ryota*; Sambonsuge, Shota*; Haramoto, Naoki*; Teraoka, Yuden; Yoshigoe, Akitaka; Fukidome, Hirokazu*; Suemitsu, Maki*
no journal, ,
no abstracts in English
