JAEA
  • help
  • PC | SP
  • JP | EN
          
Refine your search：     
Report No.
 - 
Clear All
Search Results: Records 1-4 displayed on this page of 4
  • 1

Presentation/Publication Type

Initialising ...

Refine

Journal/Book Title

Initialising ...

Meeting title

Initialising ...

First Author

Initialising ...

Keyword

Initialising ...

Language

Initialising ...

Publication Year

Initialising ...

Held year of conference

Initialising ...

Save select records

Journal Articles

Photostimulated luminescence applicable to pre-screening of potassium-rich phases in chondritic breccias

Yokoyama, Tatsunori; Misawa, Keiji*; Okano, Osamu*; Minowa, Haruka*; Fukuoka, Takaaki*

Journal of Radioanalytical and Nuclear Chemistry, 310(1), p.81 - 89, 2016/10

https://doi.org/10.1007/s10967-016-4846-x
 Times Cited Count：1 Percentile：10.71(Chemistry, Analytical)

The identification of alkali-rich components in extraterrestrial materials along with their separation from other constituents is indispensable for subsequent cosmochemical and isotopic studies. This paper presents a simple pre-screening method for such materials by autoradiography using imaging plates (IPs), which is applicable to identification of mm-sized samples containing ca. 30 $$mu$$g of potassium in the Yamayo-74442 chondrite. The detection limit of IPs was $$sim$$1 mBq of $$^{40}$$K under 49 days exposure. The method provides an opportunity to screen meteorite materials non-destructively and to inexpensively check potassium-rich areas and suitable for the $$^{40}$$K-$$^{40}$$Ca and $$^{40}$$K-$$^{40}$$Ar ($$^{39}$$Ar-$$^{40}$$Ar) age determinations.

Journal Articles

Electrical conductivity increase of Al-doped ZnO films induced by high-energy-heavy ions

Sugai, Hiroyuki; Matsunami, Noriaki*; Fukuoka, Osamu*; Sataka, Masao; Kato, Teruo; Okayasu, Satoru; Shimura, Tetsuo*; Tazawa, Masato*

Nuclear Instruments and Methods in Physics Research B, 250(1-2), p.291 - 294, 2006/09

https://doi.org/10.1016/j.nimb.2006.04.126
 Times Cited Count：15 Percentile：70.56(Instruments & Instrumentation)

We have investigated the effects on electrical properties of Al-doped ZnO (AZO) semiconductor films induced by high-energy heavy ion. The AZO films with c-axis on SiO$$_{2}$$ glass substrate were prepared by a RF-sputter-deposition method at 400 $$^{circ}$$C. Rutherford backscattering spectroscopy shows that the Al/Zn composition and the film thickness are 4 % and 0.3 $$mu$$m. We find that the conductivity monotonically increases from 1.5$$times$$10$$^{2}$$ to 8$$times$$10$$^{2}$$ S/cm with increasing the fluence up to 4$$times$$10$$^{13}$$/cm$$^{2}$$, as already been observed for 100 keV Ne irradiation. The fluence of 100 keV Ne at which the conductivity takes its maximum is 3$$times$$10$$^{16}$$/cm$$^{2}$$ (7 dpa). The dpa of 100 MeV Xe at 4$$times$$10$$^{13}$$/cm$$^{2}$$ is estimated as 0.008. Hence, the conductivity increase by 100 MeV Xe ion is ascribed to the electronic excitation effects.

Journal Articles

Irradiation effects with 100 MeV Xe ions on optical properties of Al-doped ZnO films

Fukuoka, Osamu*; Matsunami, Noriaki*; Tazawa, Masato*; Shimura, Tetsuo*; Sataka, Masao; Sugai, Hiroyuki; Okayasu, Satoru

Nuclear Instruments and Methods in Physics Research B, 250(1-2), p.295 - 299, 2006/09

https://doi.org/10.1016/j.nimb.2006.04.146
 Times Cited Count：24 Percentile：83(Instruments & Instrumentation)

We have investigated the effects on electrical and optical properties of Al-doped ZnO (AZO) semiconductor films induced by high-energy heavy ion. The AZO films with c-axis on SiO$$_{2}$$ glass substrate were prepared by a RF-sputter-deposition method at 400 $$^{circ}$$C. Rutherford backscattering spectroscopy shows that the Al/Zn composition and the film thickness are 4 % and 0.3 $$mu$$m. No appreciable change was observed in optical transparency. We find that the conductivity monotonically increases from 1.5$$times$$10$$^{2}$$ to 8$$times$$10$$^{2}$$ S/cm with increasing the fluence up to 4$$times$$10$$^{13}$$/cm$$^{2}$$, as already been observed for 100 keV Ne irradiation. The fluence of 100 keV Ne at which the conductivity takes its maximum is 3$$times$$10$$^{16}$$/cm$$^{2}$$ (7 dpa). The dpa of 100 MeV Xe at 4$$times$$10$$^{13}$$/cm$$^{2}$$ is estimated as 0.008. Hence, the conductivity increase by 100 MeV Xe ion is ascribed to the electronic excitation effects.

Journal Articles

A Multi-exciton model for the electronic sputtering of oxides

Matsunami, Noriaki*; Fukuoka, Osamu*; Shimura, Tetsuo*; Sataka, Masao; Okayasu, Satoru

Nuclear Instruments and Methods in Physics Research B, 230(1-4), p.507 - 511, 2005/04

https://doi.org/10.1016/j.nimb.2004.12.092
 Times Cited Count：14 Percentile：67.94(Instruments & Instrumentation)

no abstracts in English

4 (Records 1-4 displayed on this page)
  • 1