Development of apparatus for electron irradiation and in-situ I-V characteristics measurements for space solar cells

Fumon, Takashi*; Kobayashi, Ippei*; Oshima, Takeshi; Sato, Shinichiro; Okuda, Shuichi*; Taniguchi, Ryoichi*; Iwase, Akihiro*

Proceedings of the 8th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-8), p.203 - 206, 2008/12

We developed an apparatus for electron irradiation and in-situ current-voltage (I-V) characteristics measurements for space solar cells. The apparatus was interfaced to an electron linear accelerator at Radiation Research Center of Osaka Prefecture University. By using this apparatus, the electron irradiation with the energies from 6 MeV to 12 MeV can be performed at various temperatures from -196 C to 100 C. In-situ I-V characteristic measurements are also possible at the temperature from -196 C to 100 C. As a first demonstration using this apparatus, we performed two experiments. First, I-V characteristics of a Si solar cell were measured at room temperature and at low temperature. Secondly, the Si solar cell was irradiated with 10 MeV electrons and I-V characteristics were measured at room temperature. The experimental result was compared with those for 1 MeV electron irradiation and 10 MeV proton irradiation.