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Nakazato, Tomoharu*; Furukawa, Yusuke*; Tanaka, Momoko; Tatsumi, Toshihiro*; Nishikino, Masaharu; Yamatani, Hiroshi*; Nagashima, Keisuke; Kimura, Toyoaki*; Murakami, Hidetoshi*; Saito, Shigeki*; et al.
Journal of Crystal Growth, 311(3), p.875 - 877, 2009/01
Times Cited Count：24 Percentile：86.17(Crystallography)The temperature dependence of scintillation properties of a hydrothermal-method-grown zinc oxide (ZnO) emission is investigated using a nickel-like silver laser emitting at 13.9 nm. A broad peak at 386 nm with a full-width at half-maximum (FWHM) of 15 nm at room temperature (298 K) is obtained. The peak position tends to be blue shifted while the FWHM becomes narrower when the crystal temperature is decreased to 25 K. Streak images fitted by a double exponential decay reveal that the measured emission decay at 105 K was 
= 0.88 ns and 
= 2.7 ns. This decay time of a few nanoseconds is suitable for lithographic applications and is sufficiently short for the characterization of laser plasma extreme ultraviolet (EUV) sources with nanosecond durations.
Tanaka, Momoko; Furukawa, Yusuke*; Nakazato, Tomoharu*; Tatsumi, Toshihiro*; Murakami, Hidetoshi*; Shimizu, Toshihiko*; Sarukura, Nobuhiko*; Nishikino, Masaharu; Kawachi, Tetsuya; Kagamitani, Yuji*; et al.
X-Ray Lasers 2008; Springer Proceedings in Physics, Vol.130, p.501 - 505, 2009/00
We measured the time-resolved fluorescence spectra of ZnO and GaN single crystals excited by an X-ray laser operating at 13.9 nm and evaluated their scintillation properties for EUV excitation as compared with UV excitation case. For ZnO, a clear fluorescence peak of excitonic origin was observed at around 380 nm and the decay lifetime of less than 3 ns is found to be almost similar to the UV excitation case. The fluorescence at 380 nm is ideal for scintillator device design in the EUV and further applications. For GaN, the lifetimes are much longer than ZnO and the temporal profile of the EUV-excited fluorescence differs with the UV excitation case. As such, the EUV scintillation properties of ZnO is said to be more favorable than GaN. Finally, it is also demonstrated that an X-ray laser is an excellent tool for spectroscopic characterization of materials intended for next-generation lithography applications.
Furukawa, Yusuke*; Tanaka, Momoko; Murakami, Hidetoshi*; Saito, Shigeki*; Sarukura, Nobuhiko*; Nishikino, Masaharu; Yamatani, Hiroshi; Nishimura, Hiroaki*; Mima, Kunioki*; Kagamitani, Yuji*; et al.
Reza Kenkyu, 36(APLS), p.1028 - 1030, 2008/12
Optical technologies in extreme ultraviolet (EUV) region have been receiving strong interests for the next generation lithography. Here we report properties of ZnO as scintillators in the EUV region, and to demonstrate the feasibility of using a Ni-like Ag EUV laser operated at 13.9-nm to evaluate these properties. The ZnO sample was irradiated with EUV laser pulses and the fluorescence was measured using a streak camera fitted with a spectrograph. A clear, excitonic, fluorescence peak was observed at around 380 nm with a decay lifetime of 3 ns. The prominent peak fluorescence is ideal for EUV detection and further applications including imaging.
Furukawa, Yusuke*; Tanaka, Momoko; Nakazato, Tomoharu*; Tatsumi, Toshihiro*; Nishikino, Masaharu; Yamatani, Hiroshi; Nagashima, Keisuke; Kimura, Toyoaki; Murakami, Hidetoshi*; Saito, Shigeki*; et al.
Journal of the Optical Society of America B, 25(7), p.B118 - B121, 2008/07
Times Cited Count：24 Percentile：72.65(Optics)Using EUV laser operated at 13.9 nm ZnO and GaN are shown to be excellent scintillators in this wavelength region. Especially ZnO has short response time of 3 ns and prominent peak fluorescence from excitation at 380 nm.
Tanaka, Momoko; Furukawa, Yusuke*; Sarukura, Nobuhiko*
Purazuma, Kaku Yugo Gakkai-Shi, 84(7), p.443 - 445, 2008/07
X-ray laser is a characteristic EUV source with short pulse duration of several pico-seconds, narrow spectral width, and high coherence. As an application of the X-ray laser, the UV emission from the ZnO single crystal excited by the 13.9 nm X-ray laser was observed and evaluated for EUV scintillator. The response time is sufficiently short for characterizing EUV lithography light sources having several nanoseconds duration. It is also shown that the X-ray laser is an excellent tool for time-resolved spectroscopy and characterization of materials intended for next-generation lithography applications.
Tanaka, Momoko; Nishikino, Masaharu; Yamatani, Hiroshi; Nagashima, Keisuke; Kimura, Toyoaki; Furukawa, Yusuke*; Murakami, Hidetoshi*; Saito, Shigeki*; Sarukura, Nobuhiko*; Nishimura, Hiroaki*; et al.
Applied Physics Letters, 91(23), p.231117_1 - 231117_3, 2007/12
Times Cited Count：52 Percentile：84.56(Physics, Applied)The scintillation properties of a hydrothermal method grown zinc oxide (ZnO) crystal are evaluated for extreme ultraviolet (EUV) laser excitation at 13.9 nm wavelength. The exciton emission lifetime at around 380 nm is determined to be 1.1 ns, almost identical to ultraviolet laser excitation cases. This fast response time is sufficiently short for characterizing EUV lithography light sources having a few nanoseconds duration. The availability of large size ZnO crystal up to 3-inch is quite attractive for future lithography and imaging applications.
Itakura, Ryuji; Liu, P.*; Furukawa, Yusuke*; Okino, Tomoya*; Yamanouchi, Kaoru*; Nakano, Hidetoshi*
Journal of Chemical Physics, 127(10), p.104306_1 - 104306_5, 2007/09
Times Cited Count：48 Percentile：84.79(Chemistry, Physical)Coulomb explosion of methanol induced by intense laser pulses with 
t = 7 and 21 fs is investigated by coincidence momentum imaging. When t = 7, the angular distribution of recoil vectors for the direct C-O bond breaking exhibits a peak deflected from the laser polarization direction by 30-45 deg., and the corresponding angular distribution for the migration pathway exhibits almost the same profile. When the laser pulse is stretched to t = 21 fs, the angular distributions for the direct and migration pathways exhibit a broad peak along the laser polarization direction. However, the extent of the anisotropy in the migration pathway is smaller than that in the direct pathway, exhibiting a substantial effect of hydrogen atom migration.
Itakura, Ryuji; Liu, P.*; Furukawa, Yusuke*; Yamanouchi, Kaoru*; Nakano, Hidetoshi*
no journal, ,
no abstracts in English
Furukawa, Yusuke*; Murakami, Hidetoshi*; Sarukura, Nobuhiko*; Tanaka, Momoko; Nishikino, Masaharu; Nagashima, Keisuke; Kimura, Toyoaki; Yamatani, Hiroshi; Yoshikawa, Akira*; Fukuda, Tsuguo*
no journal, ,
Using Ni-like Ag extreme ultraviolet (EUV) laser operated at 13.9-nm, ZnO is shown to be the excellent scintillator in this wavelength region with sufficiently short response time of less than 3 nsec and prominent peak fluorescence originated form exciton at 380 nm.
Tanaka, Momoko; Furukawa, Yusuke*; Murakami, Hidetoshi*; Sarukura, Nobuhiko*; Nishikino, Masaharu; Nagashima, Keisuke; Kimura, Toyoaki; Yamatani, Hiroshi; Yoshikawa, Akira*; Fukuda, Tsuguo*
no journal, ,
Using Ni-like Ag extreme ultraviolet (EUV) laser operated at 13.9-nm, ZnO is shown to be the excellent scintillator in this wavelength region with sufficiently short response time of less than 3 nsec and prominent peak fluorescence originated form exciton at 380 nm.
Furukawa, Yusuke*; Murakami, Hidetoshi*; Saito, Shigeki*; Sarukura, Nobuhiko*; Nishimura, Hiroaki*; Mima, Kunioki*; Tanaka, Momoko; Nishikino, Masaharu; Yamatani, Hiroshi; Nagashima, Keisuke; et al.
no journal, ,
Zinc oxide (ZnO) has previously been reported to be a potential light-emitting diode materia. We measured the time-resolved emission spectrum of a ZnO crystal for extreme ultraviolet (EUV) laser excitation at 13.9 nm wavelength and compared with UV excitation case. The emission lifetime was determined to be 2.6 ns. This value was not changed even for ultraviolet laser excitation. In the context of the nanosecond regime in the EUV region, ZnO crystal promises to be a feasible scintillation material.
Sarukura, Nobuhiko*; Furukawa, Yusuke*; Murakami, Hidetoshi*; Saito, Shigeki*; Nishimura, Hiroaki*; Mima, Kunioki*; Tanaka, Momoko; Nishikino, Masaharu; Yamatani, Hiroshi; Nagashima, Keisuke; et al.
no journal, ,
Optical technologies in the extreme ultraviolet (EUV) region have been receiving strong interest for the next generation lithography. Here we report properties of ZnO and GaN as scintillators in the EUV region, and to demonstrate the feasibility of using a Ni-like Ag EUV laser operated at 13.9-nm to evaluate these properties. The sample was irradiated with EUV laser pulses and the fluorescence were measured using a streak camera fitted with a spectrograph. In the case of ZnO, a clear, excitonic, fluorescence peak was observed at around 380 nm with a decay lifetime of 3 ns, as shown in Fig. 1. The prominent peak fluorescence is ideal for EUV detection and further applications including imaging. For GaN, a fluorescence peak at 370 nm having slower 5-ns decay time was observed. In this respect, the EUV scintillation properties of ZnO is said to be more favorable than GaN.
Yamada, Yusuke*; Shibahara, Masakazu*; Ikushima, Kazuki*; Kitani, Yuji*; Nishikawa, Satoru*; Furukawa, Takashi*; Akita, Koichi; Suzuki, Hiroshi; Morooka, Satoshi
no journal, ,
no abstracts in English
Nishikawa, Satoru*; Furukawa, Takashi*; Akita, Koichi; Suzuki, Hiroshi; Morooka, Satoshi; Harjo, S.; Shibahara, Masakazu*; Ikushima, Kazuki*; Kitani, Yuji*; Yamada, Yusuke*
no journal, ,
no abstracts in English
Kitani, Yuji*; Shibahara, Masakazu*; Ikushima, Kazuki*; Yamada, Yusuke*; Nishikawa, Satoru*; Furukawa, Takashi*; Akita, Koichi; Suzuki, Hiroshi; Morooka, Satoshi
no journal, ,
no abstracts in English
Kitani, Yuji*; Shibahara, Masakazu*; Ikushima, Kazuki*; Yamada, Yusuke*; Nishikawa, Satoru*; Furukawa, Takashi*; Akita, Koichi; Suzuki, Hiroshi; Morooka, Satoshi
no journal, ,
no abstracts in English
Yamada, Yusuke*; Kitani, Yuji*; Ikushima, Kazuki*; Shibahara, Masakazu*; Nishikawa, Satoru*; Furukawa, Takashi*; Akita, Koichi; Suzuki, Hiroshi; Morooka, Satoshi
no journal, ,
no abstracts in English
