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Takami, Kazusa*; Gomi, Yuibi*; Yasuda, Ryuichi*; Abe, Shinichiro; Ito, Masatoshi*; Kanda, Hiroki*; Fukuda, Mitsuhiro*; Hashimoto, Masanori*
IEEE Transactions on Nuclear Science, 72(8), p.2622 - 2628, 2025/08
Times Cited Count：1 Percentile：91.88Neutron-induced soft errors in the terrestrial environment pose reliability issues for semiconductor devices. We have developed the new method for estimating terrestrial SER based on simulation coupled with one-time irradiation using a conventional neutron source. This method has been validated using 65-nm planar SRAMs. However, with the ongoing progression of process shrinkage and the increasing adoption of devices fabricated with newer processes, there is a growing demand for further experimental validation of the terrestrial SER estimation method for these advanced processes. In this work, we validated the estimation method for 12-nm 1-fin FinFETs and 28-nm planer SRAMs. The SERs estimated by our method were consistent with the SERs measured using a white neutron beam at RCNP within 28% error.
Takami, Kazusa*; Gomi, Yuibi*; Abe, Shinichiro; Liao, W.*; Manabe, Seiya*; Matsumoto, Tetsuro*; Hashimoto, Masanori*
Proceedings of IEEE International Reliability Physics Symposium (IRPS 2020) (Internet), 6 Pages, 2023/00
Times Cited Count：3 Percentile：88.21(Engineering, Multidisciplinary)According to the test standard of JESD89, neutrons with energies higher than 10 meV are considered for calculating soft error rate (SER). However, neutrons whose energies are below 10 MeV exist in the terrestrial environment. This paper studies the characteristics of the single event upset (SEU) cross sections in 12- and 28-nm SRAMs induced by low-energy neutrons. Experimental results show that the SEU event cross sections of the 12-nm FinFET SRAM and 28-nm planar SRAM drop less significantly from 14.8 MeV to 6.0 MeV compared with 65-nm SRAM. This result shows that the importance of neutrons below 10 MeV elevates for terrestrial SER estimation for advanced SRAMs.
